Abstract: A method for fabricating a donor substrate comprises the steps of A: providing a handle substrate, B: providing a target substrate, C: attaching the target substrate to the handle substrate, and D: rectifying, in particular, by grinding, the target substrate attached to the handle substrate, so as to form the donor substrate, the method being characterized in that a waiting time period of a predetermined duration is observed between step C and step D.

Abstract: A method for transferring a useful layer to a carrier substrate comprises: a) providing a donor substrate including a donor layer; b) forming an embrittlement area by implanting species in the donor layer and defining therewith a useful layer; c) assembling the carrier substrate with the donor substrate; d) a heat treatment step including a first phase and a second phase, wherein the first phase, having a first duration, is heated to a first temperature and is suitable for maturing defects and preventing a fracture from occurring in the embrittlement area, and wherein the second phase, having a second duration, comprises a bearing at a second temperature, below the first temperature, and is suitable for causing a fracture to occur along the embrittlement area.

Abstract: A holding device arrangement for use in an implantation process of a piezoelectric substrate comprises a substrate holding device with an elastic and thermo-conductive layer for receiving a piezoelectric substrate, and means for electrically connecting the surface of the elastic and thermo-conductive layer for receiving the piezoelectric substrate to ground potential. A method for implanting a piezoelectric substrate is performed using such holding device arrangement as described above, and an ion implanter may include such a holding device arrangement.

Abstract: A method for transferring a piezoelectric layer from a donor substrate onto a support substrate comprises the steps of: a) providing a predetermined splitting area in a piezoelectric donor substrate, b) attaching the piezoelectric donor substrate to a support substrate to form an assembly, and c) detaching the piezoelectric layer from the piezoelectric donor substrate comprising applying an electric field. By using the electric field, the detachment step can be carried out at low temperatures. A detaching chamber for carrying out at least a portion of such a method includes one or two chucks comprising first and/or second electrodes for applying an electric field to a piezoelectric layer.

Abstract: A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick laver; introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.

Abstract: A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick layer introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.

Abstract: A method for transferring a piezoelectric layer from a donor substrate onto a support substrate comprises the steps of: a) providing a predetermined splitting area in a piezoelectric donor substrate, b) attaching the piezoelectric donor substrate to a support substrate to form an assembly, and c) detaching the piezoelectric layer from the piezoelectric donor substrate comprising applying an electric field. By using the electric field, the detachment step can be carried out at low temperatures. A detachment chamber for carrying out at least a portion of such a method includes one or two chucks comprising first and/or second electrodes for applying an electric field to a piezoelectric layer.

Abstract: A method for transferring a piezoelectric layer from a donor substrate onto a support substrate comprises the steps of: a) providing a predetermined splitting area in a piezoelectric donor substrate, b) attaching the piezoelectric donor substrate to a support substrate to form an assembly, and c) detaching the piezoelectric layer from the piezoelectric donor substrate comprising applying an electric field. By using the electric field, the detachment step can be carried out at low temperatures. A detachment chamber for carrying out at least a portion of such a method includes one or two chucks comprising first and/or second electrodes for applying an electric field to a piezoelectric layer.

Abstract: A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick layer introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.

Abstract: A system and method for automated securities trading is provided. The system includes a lead trader account database, a follower account database, and a trade determination system. Trade information is received from a lead trader and a listing of followers for the lead trader is retrieved from the lead account database. For each follower, their account at the follower account database is accessed to confirm that they desire to participate in the lead trader's trade and that they have enough funds to do so. The lead trader and follower's traders are then grouped together and traded as a single trade. The traded shares are then provided to the lead trader and followers at the average price of the trade.

Abstract: A system and method for automated securities trading is provided. The system includes a lead trader account database, a follower account database, and a trade determination system. Trade information is received from a lead trader and a listing of followers for the lead trader is retrieved from the lead account database. For each follower, their account at the follower account database is accessed to confirm that they desire to participate in the lead trader's trade and that they have enough funds to do so. The lead trader and follower's traders are then grouped together and traded as a single trade. The traded shares are then provided to the lead trader and followers at the average price of the trade.

Abstract: A system and method for automated securities trading is provided. The system includes a lead trader account database, a follower account database, and a trade determination system. Trade information is received from a lead trader and a listing of followers for the lead trader is retrieved from the lead account database. For each follower, their account at the follower account database is accessed to confirm that they desire to participate in the lead trader's trade and that they have enough funds to do so. The lead trader and follower's traders are then grouped together and traded as a single trade. The traded shares are then provided to the lead trader and followers at the average price of the trade.

Abstract: A system and method for automated securities trading is provided. The system includes a lead trader account database, a follower account database, and a trade determination system. Trade information is received from a lead trader and a listing of followers for the lead trader is retrieved from the lead account database. For each follower, their account at the follower account database is accessed to confirm that they desire to participate in the lead trader's trade and that they have enough funds to do so. The lead trader and follower's traders are then grouped together and traded as a single trade. The traded shares are then provided to the lead trader and followers at the average price of the trade.

Abstract: Aqueous liquid having an oxygen demand flows into a treatment vessel where it is treated by suspended aerobic bacterial solids in the presence of dissolved oxygen. A pressurised flow of the treated liquid passes to a clarifying membrane separator effective to separate the flow into a discharge stream of clear liquid and a pressurised recycle stream concentrated in the aerobic bacterial solids. A first oxic gas is employed to scour the membranes and is conveyed away from the membrane separator in the pressurised recycle stream. The pressurised recycle stream is returned to under the surface of the liquid in the treatment vessel. A second oxic gas is introduced either into the pressurised recycle stream or into a further pressurised stream of aqueous liquid flowing into the same volume. The rate of introduction of the oxic gases is controlled with reference to the pH and dissolved oxygen concentration of the liquid in the vessel.

Abstract: Aqueous liquid having an oxygen demand flows into a treatment vessel where it is treated by suspended aerobic bacterial solids in the presence of dissolved oxygen. A pressurised flow of the treated liquid passes to a clarifying membrane separator effective to separate the flow into a discharge stream of clear liquid and a pressurised recycle stream concentrated in the aerobic bacterial solids. A first oxic gas is employed to scour the membranes and is conveyed away from the membrane separator in the pressurised recycle stream. The pressurised recycle stream is returned to under the surface of the liquid in the treatment vessel. A second oxic gas is introduced either into the pressurised recycle stream or into a further pressurised stream of aqueous liquid flowing into the same volume. The rate of introduction of the oxic gases is controlled with reference to the pH and dissolved oxygen concentration of the liquid in the vessel.