Abstract: The invention concerns an optronic device (1), comprising: a glass substrate (2) having opposed and textured first and second surfaces (21, 22); an electrically conductive material (3) continuous and formed on the second surface (22) of the glass substrate; a photovoltaic sensor thin film (4) formed on the electrically conductive material (3); the texturing of the first surface (21) of the glass substrate is configured to have a weighted optical reflection in the visible spectrum of less than 3%; the texturing of the second surface (22) of the glass substrate is configured to diffuse the light transmitted from the substrate to the transparent electrode (3).

Abstract: The invention relates to a scattering and conductive anti-reflection surface, comprising a continuous electrically conductive material of variable thickness deposited on a textured surface so as to render the assembly anti-reflective and scattering.

Abstract: The invention relates to the use of a super-slippery thin-layer film or coating for enhancing the lubrication capacity of a part to be subjected to great friction and wear. The film of the invention for improving the lubrication capacity of parts to be subjected to important friction and wear includes at least: a layer (3) of a hard material selected from titanium nitride (TiN), chromium nitride (CrN), titanium carbide (TiC), chromium carbide (CrC), tungsten carbide (W2C) and tungsten carbide-carbon composites (WC/C), alumina (AI2O3), molybdenum sulphide (MoS2), and materials of the hydrogenated amorphous carbon type (a: CH), the layer including on one surface thereof a series of dips and protrusions; and a layer (4) of an oleophilic material. The invention can particularly be used in the field of mechanics.

Abstract: The invention relates to a substrate comprising at least one scattering film made of a transparent conductive oxide (TCO) and to a process for manufacturing such a substrate. It also relates to a solar cell comprising such a substrate. The substrate according to the invention comprises a layer of spherical particles made of a material chosen from dielectric and transparent conductive oxides, the layer being coated with a TCO film and the diameters of said spherical particles belonging to at least two populations of different diameters. The invention is applicable in particular to solar cells.

Abstract: A process for fabricating a silicon-based thin-film photovoltaic cell, applicable for example in the energy generation field. The fabrication process includes a) depositing a p-doped or n-doped amorphous silicon film, the X-ray diffraction spectrum of which has a line centered at 28° that has a mid-height width, denoted by a, such that 4.7°?a<6.0°, on a substrate.

Abstract: The invention relates to the use of a super-slippery thin-layer film or coating for enhancing the lubrication capacity of a part to be subjected to great friction and wear. The film of the invention for improving the lubrication capacity of parts to be subjected to important friction and wear includes at least: a layer (3) of a hard material selected from titanium nitride (TiN), chromium nitride (CrN), titanium carbide (TiC), chromium carbide (CrC), tungsten carbide (W2C) and tungsten carbide-carbon composites (WC/C), alumina (AI2O3), molybdenum sulphide (MoS2), and materials of the hydrogenated amorphous carbon type (a:CH), the layer including on one surface thereof a series of dips and protrusions; and a layer (4) of an oleophilic material. The invention can particularly be used in the field of mechanics.

Abstract: The invention concerns a method for making a photovoltaic cell based on thin film silicon, which consists in providing a heterojunction by depositing on a support at least one first P— (or N—) doped amorphous silicon layer (13) and a second N— (or P—) doped amorphous silicon layer (14), in crystallizing, at least partly, the at least one first layer (13) using a technology for crystallizing silicon by pulsed electronic beam.

Abstract: The invention relates to a method for forming a thin, high hardness coating and devices comprising it. The method of the invention consists in depositing, by magnetron cathode sputtering, a titanium film on at least one surface of a substrate under a partial pressure of argon of 1 Pa, then in depositing, by magnetron cathode sputtering, a titanium nitride film, onto the film obtained by introducing nitrogen into the cathodic sputtering chamber while maintaining a partial pressure of 1 Pa, and in depositing a film of a composite nanostructured material based on titanium, zirconium, boron and nitrogen onto the film obtained by magnetron cathode sputtering in active co-sputtering mode. The method of the invention can be applied in many fields, and in particular in the mechanical field in order to improve the surface hardness of mechanical components.

Abstract: The invention concerns a method for making a photovoltaic cell based on thin film silicon, which consists in providing a heterojunction by depositing on a support at least one first P— (or N—) doped amorphous silicon layer (13) and a second N— (or P—) doped amorphous silicon layer (14), in crystallising, at least partly, the at least one first layer (13) using a technology for crystallising silicon by pulsed electronic beam.

Abstract: The sulfidation resistance of a silver-base material coating is further improved by making a concentration gradient of silver, oxygen and of one or more oxidizable alloying elements that may be present in the material, from the free surface of the coating up to a depth comprised between 10 nm and 1 ?m and more particularly between 100 nm and 1 ?m. Thus, the coating comprises a stack of one main layer made from silver-base material and of one oxidized thin film. The thin film, with a thickness comprised between 10 nm and 1 ?m, thus presents a decreasing silver concentration gradient from the interface between the thin film and the main layer to the free surface of the thin film. Deposition of the coating on a support can be achieved by two successive physical vapor deposition steps, and more particularly by magnetron cathode sputtering.