Patents by Inventor Cedric Huyghebaert
Cedric Huyghebaert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11898958Abstract: A spot on a layer of a 2D semiconductor material deposited on a substrate is irradiated so as to generate excitons, so that photons are emitted from the layer. The photoluminescence spectrum is recorded for different values of the charge carrier concentration in the layer. The modulation of the charge carrier concentration may be realized by modulating the output power of the light source used to irradiate the sample. The relation is recorded between the ratio of the photoluminescence intensity of a first peak in the spectrum related to radiative recombination from indirect bandgaps to the intensity of a second peak in the spectrum related to radiative recombination from direct bandgaps, and the carrier concentration. This relation is fitted to a model of the ratio that takes into account multiple recombination mechanisms, radiative and non-radiative. From this process, the trap density within the bandgap is derived.Type: GrantFiled: May 18, 2021Date of Patent: February 13, 2024Assignees: IMEC VZW, Katholieke UniversitietInventors: Alessandra Leonhardt, Cesar Javier Lockhart De La Rosa, Stefan De Gendt, Cedric Huyghebaert, Steven Brems, Thomas Nuytten
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Publication number: 20230189497Abstract: The present disclosure relates generally to static random-access memory (SRAM) devices. Specifically, the disclosure proposes a SRAM device with a three-layered SRAM cell design. The SRAM cell comprises a storage comprising four storage transistors, and comprises two access transistors to control access to the storage cell. The SRAM cell further comprises a stack of three layer structures. Two of the storage transistors are formed in a first layer structure of the stack, and two other of the storage transistors are formed in a second layer structure of the stack adjacent to the first layer structure. The two access transistors are formed in a third layer structure of the stack adjacent to the second layer structure. Each layer structure comprises a semiconductor material, the transistors in the layer structure are based on that semiconductor material, and at least two of the three layer structures comprise a different type of semiconductor material.Type: ApplicationFiled: December 9, 2022Publication date: June 15, 2023Inventors: Cedric Huyghebaert, Tom Schram, Iuliana Radu
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Patent number: 11599019Abstract: According to an aspect of the present disclosure there is provided a method for forming an EUVL pellicle, the method comprising: coating a carbon nanotube, CNT, membrane, and mounting the CNT membrane to a pellicle frame, wherein coating the CNT membrane comprises: pre-coating CNTs of the membrane with a seed material, and forming an outer coating on the pre-coated CNTs, the outer coating covering the pre-coated CNTs, the forming of the outer coating comprising depositing a coating material on the pre-coated CNTs by atomic layer deposition.Type: GrantFiled: December 22, 2020Date of Patent: March 7, 2023Assignee: IMEC VZWInventors: Marina Timmermans, Cedric Huyghebaert, Ivan Pollentier, Elie Schapmans, Emily Gallagher
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Publication number: 20210356399Abstract: A spot on a layer of a 2D semiconductor material deposited on a substrate is irradiated so as to generate excitons, so that photons are emitted from the layer. The photoluminescence spectrum is recorded for different values of the charge carrier concentration in the layer. The modulation of the charge carrier concentration may be realized by modulating the output power of the light source used to irradiate the sample. The relation is recorded between the ratio of the photoluminescence intensity of a first peak in the spectrum related to radiative recombination from indirect bandgaps to the intensity of a second peak in the spectrum related to radiative recombination from direct bandgaps, and the carrier concentration. This relation is fitted to a model of the ratio that takes into account multiple recombination mechanisms, radiative and non-radiative. From this process, the trap density within the bandgap is derived.Type: ApplicationFiled: May 18, 2021Publication date: November 18, 2021Inventors: Alessandra Leonhardt, Cesar Javier Lockhart De La Rosa, Stefan De Gendt, Cedric Huyghebaert, Steven Brems, Thomas Nuytten
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Patent number: 11163229Abstract: A method for protecting a photomask comprises: (i) providing the photomask, (ii) providing a border, (iii) depositing at least two electrical contacts on the border, (iv) mounting a film comprising carbon nanotubes on the border such that the film comprises a free-standing part, wherein after the mounting and depositing steps, the electrical contacts are in contact with the film, (v) inducing a current through the free-standing part of the film by biasing at least one pair of the electrical contacts, and (vi) mounting the border on at least one side of the photomask with the free-standing part of the film above the photomask.Type: GrantFiled: November 5, 2019Date of Patent: November 2, 2021Assignees: IMEC VZW, KATHOLIEKE UNIVERSITEIT LEUVEN, KU LEUVEN R&DInventors: Marina Mariano Juste, Marina Timmermans, Ivan Pollentier, Cedric Huyghebaert, Emily Gallagher
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Patent number: 11092886Abstract: The present disclosure relates to a method for forming a pellicle for extreme ultraviolet lithography, the method comprising: forming a coating of a first material on a peripheral region of a main surface of a carbon nanotube pellicle membrane, the membrane including a carbon nanotube film, arranging the carbon nanotube pellicle membrane on a pellicle frame with the peripheral region facing a support surface of the pellicle frame, wherein the support surface of the pellicle frame is formed by a second material, and bonding together the coating of the carbon nanotube pellicle membrane and the pellicle support surface by pressing the carbon nanotube pellicle membrane and the pellicle support surface against each other. The present disclosure relates also relates to a method for forming a reticle system for extreme ultraviolet lithography.Type: GrantFiled: May 15, 2018Date of Patent: August 17, 2021Assignees: IMEC VZW, Imec USA Nanoelectronics Design CenterInventors: Marina Timmermans, Emily Gallagher, Ivan Pollentier, Hanns Christoph Adelmann, Cedric Huyghebaert, Jae Uk Lee
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Publication number: 20210191255Abstract: According to an aspect of the present disclosure there is provided a method for forming an EUVL pellicle, the method comprising: coating a carbon nanotube, CNT, membrane, and mounting the CNT membrane to a pellicle frame, wherein coating the CNT membrane comprises: pre-coating CNTs of the membrane with a seed material, and forming an outer coating on the pre-coated CNTs, the outer coating covering the pre-coated CNTs, the forming of the outer coating comprising depositing a coating material on the pre-coated CNTs by atomic layer deposition.Type: ApplicationFiled: December 22, 2020Publication date: June 24, 2021Inventors: Marina Timmermans, Cedric Huyghebaert, Ivan Pollentier, Elie Schapmans, Emily Gallagher
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Patent number: 10712659Abstract: The present disclosure relates to a method for forming a carbon nanotube pellicle membrane for an extreme ultraviolet lithography reticle, the method comprising: bonding together overlapping carbon nanotubes of at least one carbon nanotube film by pressing the at least one carbon nanotube film between a first pressing surface and a second pressing surface, thereby forming a free-standing carbon nanotube pellicle membrane. The present disclosure also relates to a method for forming a pellicle for extreme ultraviolet lithography and for forming a reticle system for extreme ultraviolet lithography respectively.Type: GrantFiled: May 15, 2018Date of Patent: July 14, 2020Assignees: IMEC VZW, Imec USA Nanoelectronics Design CenterInventors: Emily Gallagher, Cedric Huyghebaert, Ivan Pollentier, Hanns Christoph Adelmann, Marina Timmermans, Jae Uk Lee
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Publication number: 20200201169Abstract: A method for protecting a photomask comprises: (i) providing the photomask, (ii) providing a border, (iii) depositing at least two electrical contacts on the border, (iv) mounting a film comprising carbon nanotubes on the border such that the film comprises a free-standing part, wherein after the mounting and depositing steps, the electrical contacts are in contact with the film, (v) inducing a current through the free-standing part of the film by biasing at least one pair of the electrical contacts, and (vi) mounting the border on at least one side of the photomask with the free-standing part of the film above the photomask.Type: ApplicationFiled: November 5, 2019Publication date: June 25, 2020Inventors: Marina Mariano Juste, Marina Timmermans, Ivan Pollentier, Cedric Huyghebaert, Emily Gallagher
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Patent number: 10369775Abstract: The disclosed technology generally relates to preparing two-dimensional material layers, and more particularly to releasing a graphene layer from a template substrate. According to an aspect, a method of releasing a graphene layer includes providing a template substrate on which the graphene layer is provided, the method comprising: subjecting the graphene layer and the template substrate to a water treatment by soaking the graphene layer and the template substrate in water such that water is intercalated between the template substrate and the graphene layer; and subjecting the graphene layer and the template substrate to a delamination process, thereby releasing the graphene layer from the template substrate.Type: GrantFiled: December 8, 2017Date of Patent: August 6, 2019Assignees: IMEC vzw, Katholieke Universiteit LeuvenInventors: Steven Brems, Cedric Huyghebaert, Ken Verguts, Stefan De Gendt
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Patent number: 10353284Abstract: The present disclosure provides a lithographic reticle system comprising a reticle, a first pellicle membrane mounted in front of the reticle, and a second pellicle membrane mounted in front of the first pellicle membrane, wherein the first pellicle membrane is arranged between the reticle and the second pellicle membrane, and wherein the second pellicle membrane is releasably mounted in relation to the first pellicle membrane and the reticle.Type: GrantFiled: May 15, 2018Date of Patent: July 16, 2019Assignees: IMEC VZW, IMEC USA NANOELECTRONICS DESIGN CENTERInventors: Rik Jonckheere, Cedric Huyghebaert, Emily Gallagher
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Publication number: 20180329289Abstract: The present disclosure relates to a method for forming a carbon nanotube pellicle membrane for an extreme ultraviolet lithography reticle, the method comprising: bonding together overlapping carbon nanotubes of at least one carbon nanotube film by pressing the at least one carbon nanotube film between a first pressing surface and a second pressing surface, thereby forming a free-standing carbon nanotube pellicle membrane. The present disclosure also relates to a method for forming a pellicle for extreme ultraviolet lithography and for forming a reticle system for extreme ultraviolet lithography respectively.Type: ApplicationFiled: May 15, 2018Publication date: November 15, 2018Applicants: IMEC VZW, Imec USA Nanoelectronics Design CenterInventors: Emily Gallagher, Cedric Huyghebaert, Ivan Pollentier, Hanns Christoph Adelmann, Marina Timmermans, Jae Uk Lee
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Publication number: 20180329291Abstract: The present disclosure relates to a method for forming a pellicle for extreme ultraviolet lithography, the method comprising: forming a coating of a first material on a peripheral region of a main surface of a carbon nanotube pellicle membrane, the membrane including a carbon nanotube film, arranging the carbon nanotube pellicle membrane on a pellicle frame with the peripheral region facing a support surface of the pellicle frame, wherein the support surface of the pellicle frame is formed by a second material, and bonding together the coating of the carbon nanotube pellicle membrane and the pellicle support surface by pressing the carbon nanotube pellicle membrane and the pellicle support surface against each other. The present disclosure relates also relates to a method for forming a reticle system for extreme ultraviolet lithography.Type: ApplicationFiled: May 15, 2018Publication date: November 15, 2018Applicants: IMEC VZW, Imec USA Nanoelectronics Design CenterInventors: Marina Timmermans, Emily Gallagher, Ivan Pollentier, Hanns Christoph Adelmann, Cedric Huyghebaert, Jae Uk Lee
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Publication number: 20180329290Abstract: The present disclosure provides a lithographic reticle system comprising a reticle, a first pellicle membrane mounted in front of the reticle, and a second pellicle membrane mounted in front of the first pellicle membrane, wherein the first pellicle membrane is arranged between the reticle and the second pellicle membrane, and wherein the second pellicle membrane is releasably mounted in relation to the first pellicle membrane and the reticle.Type: ApplicationFiled: May 15, 2018Publication date: November 15, 2018Applicants: IMEC VZW, Imec USA Nanoelectronics Design CenterInventors: Rik Jonckheere, Cedric Huyghebaert, Emily Gallagher
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Publication number: 20180162115Abstract: The disclosed technology generally relates to preparing two-dimensional material layers, and more particularly to releasing a graphene layer from a template substrate. According to an aspect, a method of releasing a graphene layer includes providing a template substrate on which the graphene layer is provided, the method comprising: subjecting the graphene layer and the template substrate to a water treatment by soaking the graphene layer and the template substrate in water such that water is intercalated between the template substrate and the graphene layer; and subjecting the graphene layer and the template substrate to a delamination process, thereby releasing the graphene layer from the template substrate.Type: ApplicationFiled: December 8, 2017Publication date: June 14, 2018Inventors: Steven Brems, Cedric Huyghebaert, Ken Verguts, Stefan De Gendt
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Patent number: 9982360Abstract: A method for transferring a graphene layer from a metal substrate to a second substrate is provided comprising: providing a graphene layer on the metal substrate, adsorbing hydrogen atoms on the metal substrate by passing protons through the graphene layer, treating the metal substrate having adsorbed hydrogen atoms thereon in such a way as to form hydrogen gas from the adsorbed hydrogen atoms, thereby detaching the graphene layer from the metal substrate, transferring the graphene layer to the second substrate, and optionally reusing the metal substrate by repeating the aforementioned steps.Type: GrantFiled: September 15, 2014Date of Patent: May 29, 2018Assignee: IMEC VZWInventors: Cedric Huyghebaert, Philippe M. Vereecken, Geoffrey Pourtois
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Patent number: 9899501Abstract: A semiconductor device comprises a two-dimensional (2D) material layer, the 2D material layer comprising a channel region in between a source region and a drain region; a first gate stack and a second gate stack in contact with the 2D material layer, the first and second gate stack being spaced apart over a distance; the first gate stack located on the channel region of the 2D material layer and in between the source region and the second gate stack, the first gate stack arranged to control the injection of carriers from the source region to the channel region and the second gate stack located on the channel region of the 2D material layer; the second gate stack arranged to control the conduction of the channel region.Type: GrantFiled: December 15, 2016Date of Patent: February 20, 2018Assignees: IMEC VZW, Katholieke Universiteit Leuven, KU LEUVEN R&DInventors: Geoffrey Pourtois, Anh Khoa Lu, Cedric Huyghebaert
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Patent number: 9834847Abstract: A cluster of non-collapsed nanowires, a template to produce the same, methods to obtain the template and to obtain the cluster by using the template, and devices having the cluster. The cluster and the template both have an interconnected region and an interconnection-free region.Type: GrantFiled: July 30, 2015Date of Patent: December 5, 2017Assignees: IMEC VZW, King Abdulaziz City of Science and TechnologyInventors: Cedric Huyghebaert, Alaa Abd-Elnaiem, Philippe Vereecken
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Publication number: 20170179263Abstract: A semiconductor device comprises a two-dimensional (2D) material layer, the 2D material layer comprising a channel region in between a source region and a drain region; a first gate stack and a second gate stack in contact with the 2D material layer, the first and second gate stack being spaced apart over a distance; the first gate stack located on the channel region of the 2D material layer and in between the source region and the second gate stack, the first gate stack arranged to control the injection of carriers from the source region to the channel region and the second gate stack located on the channel region of the 2D material layer; the second gate stack arranged to control the conduction of the channel region.Type: ApplicationFiled: December 15, 2016Publication date: June 22, 2017Inventors: Geoffrey Pourtois, Anh Khoa Lu, Cedric Huyghebaert
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Publication number: 20160204427Abstract: Composite electrodes are disclosed that comprise an active electrode material and a solid electrolyte, wherein the solid electrolyte is a composite electrolyte. The composite electrolyte comprises an electrically insulating material having a plurality of pores and a solid electrolyte material covering inner surfaces of the plurality of pores. The active electrode material may comprise a plurality of active electrode material particles in electrical contact with each other, and the composite electrolyte may be located in spaces between the plurality of active electrode material particles. The present disclosure is further related to solid-state batteries comprising a stack of an anode, a solid electrolyte layer, and a cathode, wherein at least one of the anode and the cathode is a composite electrode according to the present disclosure. The present disclosure further provides methods for fabricating such composite electrodes and solid-state batteries.Type: ApplicationFiled: January 11, 2016Publication date: July 14, 2016Applicants: IMEC VZW, Katholieke Universiteit Leuven, KU LEUVEN R&DInventors: Philippe Vereecken, Cedric Huyghebaert, Xubin Chen