Abstract: The disclosure relates to a method for forming an intermediate lattice transition buffer layer. The method includes: (a) depositing a first graded InAlAs layer on a substrate at a first constant temperature, the first graded InAlAs layer having an In/AI composition ratio which increases across the buffer layer from a first level to a second level; (b) annealing at least the first graded InAlAs layer; (c) depositing the second graded InAlAs layer on the first graded InAlAs layer at the first constant temperature, the second graded InAlAs layer having an In/Al composition ratio which increases across the buffer layer from the second level to a third level; and (d) annealing at least the second graded InAlAs layer; the buffer layer being formed under Groups III/V overpressure.

Abstract: A semiconductor device that is fabricated by metamorphic epitaxial growth processes, and includes a combined graded base and active layer having a thickness less than 5000 ?. In one non-limiting embodiment, the semiconductor device is an HBT device that includes a combined doped graded buffer and sub-collector layer having a thickness less than 5000 ?, and a concentration of indium of about 86% at a top of the combined layer.

Abstract: A semiconductor surface processing method in one example comprises disposing a polishing pad in rotating engagement with a semiconductor wafer to be polished, dripping a first polishing solution onto the polishing pad at a first drip rate, and, concurrently, dripping a second polishing solution onto the polishing pad at a second drip rate.