Abstract: A microcontroller includes a reference voltage generator circuit having a first transistor coupled as a diode, a second transistor coupled as a diode, a first variable resistor, an operational amplifier having a first input connected to the first transistor via the first variable resistor, and a second input connected to the second transistor, and second variable resistor having a first terminal connected to the second transistor and to the second input of the operational amplifier. A current mirror is controlled by an output of the operational amplifier and configured to replicate the current proportional to an absolute temperature of the second variable resistor. A current copier branch is connected to the second transistor via a switch, the current copier branch being configured to replicate the current proportional to the absolute temperature of the second variable resistor and inject the current through the second transistor.

Abstract: A substrate processing method in a substrate processing apparatus includes (a) supplying a process gas that contains a gas containing halogen other than fluorine and a gas containing oxygen, to a processing container in which a stage is disposed, the stage being configured to place thereon a workpiece having an etching target film, (b) performing plasma processing on the workpiece by first plasma generated from the process gas under first plasma generation conditions, (c) performing plasma processing on the workpiece by second plasma generated from the process gas under second plasma generation conditions in which a condition of radio-frequency power and a processing time are different from those in the first plasma generation conditions, and other conditions are the same, and (d) repeating (b) and (c).

Abstract: A method for processing a substrate includes: supplying a pulsed source RF signal to an antenna disposed above a chamber, the pulsed source RF signal including a plurality of source cycles each having a source operating state and a source non-operating state after the source operating period; and supplying a pulsed bias RF signal to a lower electrode disposed in a substrate support provided in the chamber, the pulsed bias RF signal including a plurality of bias cycles having a same pulse frequency as that of the plurality of source cycles, each bias cycle having a bias operating state during a bias operating period and a bias non-operating state during a bias non-operating period after the bias operating period. A transition timing to the bias operating state in each bias cycle is delayed with respect to a transition timing to the source operating state in a corresponding source cycle.

Abstract: An electronic device includes a switched-mode power supply having a first operating phase during which the output node of the switched-mode power supply is coupled by an on switch to a source of a first reference voltage. The first operating phase is followed by a second operation phase during which the output node of the switched-mode power supply is in a high impedance state. While in the second operating phase, a capacitor connected to the output node of the switched-mode power supply at least partially discharges into a load.

Abstract: A thrust reverser cascade for an aircraft nacelle includes a plurality of blades having a first and a second surface, the blades being connected to members connected to attachment flanges for attaching the thrust reverser cascade to the nacelle. At least one of the surfaces of the blades is covered with at least one layer of fibers, each layer including a plurality of fiber pieces which are pre-impregnated with resin. The fiber pieces are superimposed on one another, positioned parallel to the aerodynamic surface of the blade and oriented in different directions.

Abstract: The process for starting a power supply circuit which includes a switched-mode power supply is performed using: a first phase during which, if an output voltage of the switched-mode power supply is lower than a first voltage, the switched-mode power supply operates in pulse width modulation mode to increase its output voltage up to said first voltage; and when the output voltage has reached the first voltage, a second phase during which the switched-mode power supply operates in a bypass mode.

Abstract: A substrate processing method performed in a substrate processing apparatus includes providing a substrate which has a first film composed of silicon only and a second film including silicon; and etching the first film by plasma formed from a mixed gas including a halogen-containing gas and a silicon-containing gas but not including an oxygen-containing gas.

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a substrate support disposed in the plasma processing chamber; a source RF generator coupled to the plasma processing chamber, and configured to generate a pulse source RF signal including a plurality of source cycles; and a bias RF generator coupled to the substrate support, and configured to generate a pulse bias RF signal. A transition timing to the bias operating state in each bias cycle is delayed with respect to a transition timing to the source operating state in a corresponding source cycle, the source non-operating period overlaps with the bias non-operating period, and the bias operating period in each bias cycle overlaps with the source operating period in the next source cycle.

Abstract: A substrate processing method performed in a substrate processing apparatus includes providing a substrate which has a first film composed of silicon only and a second film including silicon; and etching the first film by plasma formed from a mixed gas including a halogen-containing gas and a silicon-containing gas but not including an oxygen-containing gas.

Abstract: Methods and systems for surface modification are described. In an embodiment, a method of etching includes providing a substrate having a device structure, portions of which are identified for modification. Such a method may also include passivating target surfaces of the device structure by exposing the device structure to a gas-phase composition at a processing pressure equal to or greater than 100 mTorr to form a protection layer on the target surfaces. Other embodiments of a method may include providing a substrate having a device structure, portions of which identified for removal. Such methods may further include passivating target surfaces of the device structure by exposing the device structure to a gas-phase composition, wherein the ratio of the radical content to the ion content exceeds 10-to-1.

Abstract: An electronic device includes a switched-mode power supply having a first operating phase during which the output node of the switched-mode power supply is coupled by an on switch to a source of a first reference voltage. The first operating phase is followed by a second operation phase during which the output node of the switched-mode power supply is in a high impedance state. While in the second operating phase, a capacitor connected to the output node of the switched-mode power supply at least partially discharges into a load.

Abstract: The process for starting a power supply circuit which includes a switched-mode power supply is performed using: a first phase during which, if an output voltage of the switched-mode power supply is lower than a first voltage, the switched-mode power supply operates in pulse width modulation mode to increase its output voltage up to said first voltage; and when the output voltage has reached the first voltage, a second phase during which the switched-mode power supply operates in a bypass mode.

Abstract: An electronic device includes a switched-mode power supply having a first operating phase during which the output node of the switched-mode power supply is coupled by an on switch to a source of a first reference voltage. The first operating phase is followed by a second operation phase during which the output node of the switched-mode power supply is in a high impedance state. While in the second operating phase, a capacitor connected to the output node of the switched-mode power supply at least partially discharges into a load.

Abstract: A thrust reverser cascade for an aircraft nacelle includes a plurality of blades having a first and a second surface, the blades being connected to members connected to attachment flanges for attaching the thrust reverser cascade to the nacelle. At least one of the surfaces of the blades is covered with at least one layer of fibers, each layer including a plurality of fiber pieces which are pre-impregnated with resin. The fiber pieces are superimposed on one another, positioned parallel to the aerodynamic surface of the blade and oriented in different directions.

Abstract: An electronic circuit includes a switched-mode power supply powering a first load via a first linear voltage regulator. The first regulator includes a transistor. The substrate and the gate of the transistor are capable of being coupled to a node of application of a power supply voltage. A method of operating the circuit is also disclosed.

Abstract: A material of pre-impregnated woven fibers for a part is in the form of a fibrous mat having at least one layer of several pieces of fibrous fabric pre-impregnated with resin. At least one portion of the fabric has a low-shrinkage contexture. The pieces of fabric are positioned parallel with the plane (X, Y) of the fibrous mat and orientated in different directions in the plane (X, Y).

Abstract: An electronic device includes a switched-mode power supply having a first operating phase during which the output node of the switched-mode power supply is coupled by an on switch to a source of a first reference voltage. The first operating phase is followed by a second operation phase during which the output node of the switched-mode power supply is in a high impedance state. While in the second operating phase, a capacitor connected to the output node of the switched-mode power supply at least partially discharges into a load.

Abstract: Methods and systems for surface modification are described. In an embodiment, a method of etching includes providing a substrate having a device structure, portions of which are identified for modification. Such a method may also include passivating target surfaces of the device structure by exposing the device structure to a gas-phase composition at a processing pressure equal to or greater than 100 mTorr to form a protection layer on the target surfaces. Other embodiments of a method may include providing a substrate having a device structure, portions of which identified for removal. Such methods may further include passivating target surfaces of the device structure by exposing the device structure to a gas-phase composition, wherein the ratio of the radical content to the ion content exceeds 10-to-1.

Abstract: An electronic circuit includes a switched-mode power supply powering a first load via a first linear voltage regulator. The first regulator includes a transistor. The substrate and the gate of the transistor are capable of being coupled to a node of application of a power supply voltage. A method of operating the circuit is also disclosed.

Abstract: A method for producing by pultrusion a hollow main body of a rotary movement transmission shaft made of a composite material, the method including: impregnating a reinforcement; arranging a reinforcing fabric around a pultrusion chuck to wrap the pultrusion chuck, the fabric including circumferential fibers arranged in planes orthogonal to a longitudinal axis of the chuck; and then depositing the impregnated reinforcement around the reinforcing fabric.