Abstract: A process for transfer imprinting using a novel family of anti-sticking layers, such as for nanoimprint lithography processes, is described.

Abstract: A process for transfer imprinting using a novel family of anti-sticking layers, such as for nanoimprint lithography processes, is described.

Abstract: A process for transfer imprinting using a novel family of anti-sticking layers, such as for nanoimprint lithography processes, is described.

Abstract: A process for preparing a nanostructured assembly by annealing a composition comprising a block copolymer on a surface. The block copolymer includes a first block resulting from the polymerization of at least one cyclic monomer having a structure as described herein. The block copolymer also includes a second block that includes a vinyl aromatic monomer.

Abstract: Provided is a process for controlling the critical dimension uniformity of ordered films of block copolymers on a nanometric scale. The invention also relates to the compositions used for controlling the critical dimension uniformity of ordered films of block copolymers and to the resulting ordered films that can be used in particular as masks in the lithography field.

Abstract: Provided is a process for reducing the structuring time of an ordered film of a diblock copolymer on a surface. The process includes curing, on a surface, a composition including a diblock copolymer at a structuring temperature between the Tg of the diblock copolymer and the decomposition temperature of the diblock copolymer to form an ordered film of the diblock copolymer on the substrate. The composition has a product ?effective*N of between 10.5 and 40 at the structuring temperature, where ?effective is the Flory-Huggins parameter of the diblock copolymer and N is the total degree of polymerization of the blocks of the diblock copolymer.

Abstract: Provided is a process for reducing the number of defects of an ordered film of a diblock copolymer on a surface. The process includes curing, on a surface, a composition including a diblock copolymer at a structuring temperature between the Tg of the diblock copolymer and the decomposition temperature of the diblock copolymer to form an ordered film of the diblock copolymer on the substrate. The composition has a product Xeffective*N of between 10.5 and 40 at the structuring temperature, where Xeffective is the Flory-Huggins parameter of the diblock copolymer and N is the total degree of polymerization of the blocks of the diblock copolymer.

Abstract: Provided is a process for improving the critical dimension uniformity of an ordered film of a diblock copolymer on a surface. The process includes curing, on a surface, a composition including a diblock copolymer at a structuring temperature between the Tg of the diblock copolymer and the decomposition temperature of the diblock copolymer to form an ordered film of the diblock copolymer on the substrate. The composition has a product Xeffective*N of between 10.5 and 40 at the structuring temperature, where Xeffective is the Flory-Huggins parameter of the diblock copolymer and N is the total degree of polymerization of the blocks of the diblock copolymer.

Abstract: Provided is a process for forming an ordered film of a block copolymer on a surface. The process includes curing, on a surface, a composition comprising at least one block copolymer at a structuring temperature between the highest Tg of the at least one block copolymer and the decomposition temperature of the at least one block copolymer to form an ordered film comprising the at least one block copolymer on the substrate. The composition has a product ? effective*N of between 10.5 and 40 at the structuring temperature, where ? effective is the Flory-Huggins parameter of the block copolymer and N is the total degree of polymerization of the blocks of the block copolymer. The ordered film has a thickness greater than 20 nm and a period greater than 10 nm.

Abstract: The present invention relates to a process for controlling the critical dimension uniformity of ordered films of block copolymers on a nanometric scale. The invention also relates to the compositions used for controlling the critical dimension uniformity of ordered films of block copolymers and to the resulting ordered films that can be used in particular as masks in the lithography field.

Abstract: A method for controlling the synthesis of a block copolymer containing at least two blocks, with at least one nonpolar block and at least one polar block, said method making it possible in particular to control the ratio between the blocks and the molecular weight of each of the blocks, said copolymer being a block copolymer intended to be used as a mask in a method of nanolithography by direct self-assembly (DSA), said control being achieved by semicontinuous anionic polymerization in an aprotic nonpolar medium.

Abstract: The invention relates to a block copolymer film nanostructured in nanodomains at a predetermined temperature, obtained from a basic block copolymer which is nonstructured at said predetermined temperature, and at least one block of which comprises styrene and at least another block of which comprises methyl methacrylate. The block copolymer film is useful for forming nano-lithography masks.

Abstract: The invention relates to a process for reducing the defectivity of a block copolymer (BCP1) film, the lower surface of which is in contact with a preneutralized surface (N) of a substrate (S) and the upper surface of which is covered by an upper surface neutralization layer (TC) in order to make it possible to obtain an orientation of the nanodomains of the block copolymer (BCP1) perpendicularly to the two lower and upper interfaces, where the upper surface neutralization layer (TC) employed to cover the upper surface of the block copolymer (BCP1) film comprises a second block copolymer (BCP2).

Abstract: The invention relates to a process for controlling the surface energy at the upper interface of a block copolymer (BCP1), the lower interface of which is in contact with a preneutralized surface of a substrate, in order to make it possible to obtain an orientation of the nanodomains of the block copolymer (BCP1) perpendicularly to the two lower and upper interfaces, the said process consisting in covering the upper surface of the block copolymer (BCP1) with an upper surface neutralization layer (TC) and being characterized in that the said upper surface neutralization layer (TC) comprises a second block copolymer (BCP2).

Abstract: The present invention relates to a process for obtaining high-period (typically >10 nm), thick (typically >20 nm) ordered films on a nanometric scale comprising a block copolymer (BCP). The invention also relates to the compositions used to obtain these thick ordered films and to the resulting ordered films that can be used in particular as masks in the lithography field.

Abstract: The invention relates to a block copolymer film nanostructured into nanodomains, obtained from a base block copolymer having a molecular weight of greater than 50 kg/mol, and preferably greater than 100 kg/mol and less than 250 kg/mol, and at least one block of which comprises styrene, and at least one other block of which comprises methyl methacrylate. This film is characterized in that the styrene-based block is formed by a copolymer of styrene and diphenylethylene (DPE).

Abstract: The present invention relates to a process for reducing the assembly time comprising a block copolymer (BCP). The invention also relates to the compositions used to obtain these ordered films and to the resulting ordered films that can be used in particular as masks in the lithography field.

Abstract: The present invention relates to a process for reducing the number of defects in an ordered film comprising a block copolymer (BCP). The invention also relates to the compositions used to obtain these ordered films and to the resulting ordered films that can be used in particular as masks in the lithography field.

Abstract: The present invention relates to a method for controlling the level of defects in films obtained using a composition comprising a blend of block copolymers and polymers deposited on a surface. The polymers comprise at least one monomer identical to those present in one or other block of the block copolymers.

Abstract: The invention relates to a block copolymer film nanostructured into nanodomains, obtained from a base block copolymer having a molecular weight of greater than 50 kg/mol, and preferably greater than 100 kg/mol and less than 250 kg/mol, and at least one block of which comprises styrene, and at least one other block of which comprises methyl methacrylate. This film is characterized in that the styrene-based block is formed by a copolymer of styrene and diphenylethylene (DPE).