Abstract: A method for manufacturing LED devices is provided. The method comprises forming an epitaxial layer on a starter substrate, the epitaxial layer having a first surface that interfaces with the starter substrate and a second surface opposite to the first surface; establishing an adhesive bond between the second surface of the epitaxial layer and a carrier substrate having a pre-determined light transmittance; etching away the starter substrate; etching away part of the epitaxial layer to form a plurality of light emitting diode (LED) dies on a third surface of the epitaxial layer opposite to the second surface; establishing one or more conductive bonds between selected one or more LED dies, from the plurality of LED dies, and a backplane; weakening the adhesive bond between the second surface of the epitaxial layer and the carrier substrate; and moving the carrier substrate away from the backplane.

Abstract: Embodiments relate to a method for fabricating a light-emitting-diode (LED). A metal layer is deposited on a p-type semiconductor. The p-type semiconductor is on an n-type semiconductor. The metal layer is patterned to define a p-metal. The p-type semiconductor is etched using the p-metal as an etch mask. Similarly, the n-type semiconductor is etched using the p-metal and the p-type semiconductor as an etch mask to define individual LEDs.

Abstract: Embodiments relate to a method for fabricating a light-emitting-diode (LED). A metal layer is deposited on a p-type semiconductor. The p-type semiconductor is on an n-type semiconductor. The metal layer is patterned to define a p-metal. The p-type semiconductor is etched using the p-metal as an etch mask. Similarly, the n-type semiconductor is etched using the p-metal and the p-type semiconductor as an etch mask to define individual LEDs.

Abstract: A LED device is provided. In one example, the LED device comprises: an electrical contact; and an epitaxial structure having a mesa shape and including: a first doped semiconductor layer; a second doped semiconductor layer; and a quantum well layer between the first doped semiconductor layer and the second doped semiconductor layer. The electrical contact is formed on the first doped semiconductor layer. The first doped semiconductor layer comprises a protrusion region between the electrical contact and the quantum well layer. The protrusion region facilitates movement of charges from the electrical contact to a limited region of the quantum well layer.

Abstract: A method of manufacturing light emitting diode (LED) devices is provided. In one example, the method comprises: forming a plurality of LED dies on a starter substrate, each of the plurality of LED dies including a device-side bump; moving, using a pick up tool (PUT), the starter substrate and the plurality of LED dies towards a backplane, the backplane including a plurality of backplane-side bumps; establishing the conductive bonds between the device-side bumps of the plurality of LED dies and the backplane-side bumps of the backplane at the plurality of contact locations; and operating the PUT to release the starter substrate to enable transferring of the plurality of LED dies to the backplane.

Abstract: A method for manufacturing LED devices is provided. The method comprises forming an epitaxial layer on a starter substrate, the epitaxial layer having a first surface that interfaces with the starter substrate and a second surface opposite to the first surface; establishing an adhesive bond between the second surface of the epitaxial layer and a carrier substrate having a pre-determined light transmittance; etching away the starter substrate; etching away part of the epitaxial layer to form a plurality of light emitting diode (LED) dies on a third surface of the epitaxial layer opposite to the second surface; establishing one or more conductive bonds between selected one or more LED dies, from the plurality of LED dies, and a backplane; weakening the adhesive bond between the second surface of the epitaxial layer and the carrier substrate; and moving the carrier substrate away from the backplane.

Abstract: A method of manufacturing light emitting diode (LED) devices is provided. In one example, the method comprises: forming a plurality of LED dies on a starter substrate, each of the plurality of LED dies including a device-side bump; moving, using a pick up tool (PUT), the starter substrate and the plurality of LED dies towards a backplane, the backplane including a plurality of backplane-side bumps; establishing the conductive bonds between the device-side bumps of the plurality of LED dies and the backplane-side bumps of the backplane at the plurality of contact locations; and operating the PUT to release the starter substrate to enable transferring of the plurality of LED dies to the backplane.

Abstract: Embodiments relate to fabricating a display device by assembling strips of ?LED devices onto a backplane instead of individually picking and placing each ?LED device onto the backplane. A strip of first ?LED devices is coupled to a set of interconnections on the backplane. Then, the first fabrication substrate is removed from the strip of first ?LED devices. A strip of second ?LED devices producing another color (e.g., green) is attached to a second fabrication substrate. The strip of second ?LED devices is coupled to another set of interconnections on the backplane. The process may be repeated for a strip of third ?LED devices producing yet another color (e.g., blue). After attaching the second and third ?LED devices, fabrication substrates on the second and third ?LED devices are simultaneously removed by laser based lift-off (LLO) method.

Abstract: A micro-light emitting diode (LED) includes an epitaxial structure having a mesa and a top portion on the mesa. The epitaxial structure further includes quantum wells within the mesa configured to emit light, claddings surrounding the quantum wells, and a light emitting surface on a side opposite the mesa and top portion. A reflective contact is on the top portion of the epitaxial structure. Light emitted from the quantum wells are transmitted through the mesa and the top portion in first directions, and reflected by the reflective contact back through the top portion and the mesa in second directions toward the light emitting surface. The top portion allows the quantum wells to be positioned at a parabola focal point of the mesa without limiting cladding thickness.

Abstract: A Light emitting diode (LED) includes a mesa structure, a light emitting source within the mesa structure, and a primary emission surface on a side of the LED opposed to a top of the mesa structure. The light emitting source is configured to emit light anisotropically in a first direction perpendicular to a second direction of emission of the light from the LED at the primary emission surface.

Abstract: A lens assembly includes a plurality of micro-LEDs coupled to one or more circuitries affixed to a surface of a lens substrate. At least one micro-LED is positioned within a viewing region of the lens substrate. The viewing region is a region through which light emitted by an electronic display passes prior to reaching an eyebox. The lens assembly may be part of a head-mounted display (HMD). An eye tracking unit of the HMD includes the one or more micro-LEDs to project light onto a portion of a user's eye and a detector to collect reflected and/or scattered light from the illuminated portion of the eye. The eye tracking unit tracks the movement of the user's eye. Based on the tracked movement, the HMD adjusts presentation of displayed content such as focus and/or resolutions of the displayed content.

Abstract: Embodiments relate to a micro light-emitting-diode (?LED) fabricated using a self-aligned process. To fabricate the ?LED, a metal layer is deposited on a p-type semiconductor. The p-type semiconductor is on an n-type semiconductor and the n-type semiconductor is on a top side of a substrate. The metal layer is patterned to define a p-metal. The p-type semiconductor is etched using the p-metal as an etch mask. Similarly, the n-type semiconductor is etched using the p-metal and the p-type semiconductor as an etch mask. A negative photoresist layer is deposited over the patterned p-metal and the p-type semiconductor. The negative photoresist is then exposed from the back side of the substrate, thus exposing the regions of the negative photoresist that are not masked by the p-metal. The negative photoresist is then developed to expose the p-metal.

Abstract: A micro-light emitting diode (LED) includes an epitaxial structure having a mesa and a top portion on the mesa. The epitaxial structure further includes quantum wells within the mesa configured to emit light, claddings surrounding the quantum wells, and a light emitting surface on a side opposite the mesa and top portion. A reflective contact is on the top portion of the epitaxial structure. Light emitted from the quantum wells are transmitted through the mesa and the top portion in first directions, and reflected by the reflective contact back through the top portion and the mesa in second directions toward the light emitting surface. The top portion allows the quantum wells to be positioned at a parabola focal point of the mesa without limiting cladding thickness.

Abstract: A method of manufacturing light emitting diode (LED) devices is provided. In one example, the method comprises: forming a plurality of LED dies on a starter substrate, each of the plurality of LED dies including a device-side bump; moving, using a pick up tool (PUT), the starter substrate and the plurality of LED dies towards a backplane, the backplane including a plurality of backplane-side bumps; establishing the conductive bonds between the device-side bumps of the plurality of LED dies and the backplane-side bumps of the backplane at the plurality of contact locations; and operating the PUT to release the starter substrate to enable transferring of the plurality of LED dies to the backplane.

Abstract: Embodiments relate to a method for fabricating a light-emitting-diode (LED). A metal layer is deposited on a p-type semiconductor. The p-type semiconductor is on an n-type semiconductor. The metal layer is patterned to define a p-metal. The p-type semiconductor is etched using the p-metal as an etch mask. Similarly, the n-type semiconductor is etched using the p-metal and the p-type semiconductor as an etch mask to define individual LEDs.

Abstract: A Light emitting diode (LED) includes a mesa structure, a light emitting source within the mesa structure, and a primary emission surface on a side of the LED opposed to a top of the mesa structure. The light emitting source is configured to emit light anisotropically in a first direction perpendicular to a second direction of emission of the light from the LED at the primary emission surface.

Abstract: A micro-light emitting diode (LED) includes an epitaxial structure having a mesa and a top portion on the mesa. The epitaxial structure further includes quantum wells within the mesa configured to emit light, claddings surrounding the quantum wells, and a light emitting surface on a side opposite the mesa and top portion. A reflective contact is on the top portion of the epitaxial structure. Light emitted from the quantum wells are transmitted through the mesa and the top portion in first directions, and reflected by the reflective contact back through the top portion and the mesa in second directions toward the light emitting surface. The top portion allows the quantum wells to be positioned at a parabola focal point of the mesa without limiting cladding thickness.

Abstract: A micro-LED, ?LED, comprising: a substantially parabolic mesa structure; a light emitting source within the mesa structure; and a primary emission surface on a side of the device opposed to a top of the mesa structure; wherein the mesa structure has an aspect ratio, defined by (H2*H2)/Ac, of less than 0.5, and the ?LED further comprises a reflective surface located in a region from the light emitting source to the primary emission surface, wherein the reflective surface has a roughness, Ra, less than 500 nm.

Abstract: A method for fabricating a light emitting diode (LED) with a first electrical contact deposited around the side of a layered mesa structure. First, layers of materials are formed. The layers of materials include a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first and second semiconductor layers for producing light responsive to passing current through the light emitting layer. The formed layers of material are shaped to include a bottom surface, a top surface, and at least one side surface extending from the bottom surface to the top surface. The top surface has a smaller area than the bottom surface. An electrical contact is deposited on the at least one side surface.

Abstract: Embodiments relate to fabricating a display device by assembling strips of ?LED devices onto a backplane instead of individually picking and placing each ?LED device onto the backplane. A strip of first ?LED devices is coupled to a set of interconnections on the backplane. Then, the first fabrication substrate is removed from the strip of first ?LED devices. A strip of second ?LED devices producing another color (e.g., green) is attached to a second fabrication substrate. The strip of second ?LED devices is coupled to another set of interconnections on the backplane. The process may be repeated for a strip of third ?LED devices producing yet another color (e.g., blue). After attaching the second and third ?LED devices, fabrication substrates on the second and third ?LED devices are simultaneously removed by laser based lift-off (LLO) method.