Patents by Inventor CELINE WK WONG

CELINE WK WONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ceramic-wound-capacitor with lead lanthanum zirconium titanate dielectric
    Patent number: 10163572
    Abstract: A ceramic-wound-capacitor includes a first-electrically-conductive-layer, a dielectric-layer, a second-electrically-conductive-layer, and a protective-coating. The dielectric-layer is formed of lead-lanthanum-zirconium-titanate (PLZT). The protective-coating has a thickness of less than ten micrometers (10 ?m) and provides electrical isolation between the first-electrically-conductive-layer and the second-electrically-conductive-layer of the ceramic-wound-capacitor.
    Type: Grant
    Filed: March 2, 2017
    Date of Patent: December 25, 2018
    Assignee: DELPHI TECHNOLOGIES IP LIMITED
    Inventors: Manuel Ray Fairchild, Ralph S. Taylor, David W. Ihms, Celine Wk Wong
  • CERAMIC-WOUND-CAPACITOR WITH LEAD LANTHANUM ZIRCONIUM TITANATE DIELECTRIC
    Publication number: 20170301472
    Abstract: A ceramic-wound-capacitor includes a first-electrically-conductive-layer, a dielectric-layer, a second-electrically-conductive-layer, and a protective-coating. The dielectric-layer is formed of lead-lanthanum-zirconium-titanate (PLZT). The protective-coating has a thickness of less than ten micrometers (10 ?m) and provides electrical isolation between the first-electrically-conductive-layer and the second-electrically-conductive-layer of the ceramic-wound-capacitor.
    Type: Application
    Filed: March 2, 2017
    Publication date: October 19, 2017
    Inventors: Manuel Ray Fairchild, Ralph S. Taylor, David W. Ihms, Celine Wk Wong
  • PLZT capacitor on glass substrate
    Patent number: 9299496
    Abstract: A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.
    Type: Grant
    Filed: October 2, 2015
    Date of Patent: March 29, 2016
    Assignees: Delphi Technologies, Inc., UChicago Argonne, LLC
    Inventors: Manuel Ray Fairchild, Ralph S. Taylor, Carl W. Berlin, Celine Wk Wong, Beihai Ma, Uthamalingam Balachandran
  • PLZT Capacitor On Glass Substrate
    Publication number: 20160027580
    Abstract: A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.
    Type: Application
    Filed: October 2, 2015
    Publication date: January 28, 2016
    Inventors: Manuel Ray Fairchild, Ralph S. Taylor, Carl W. Berlin, Celine Wk Wong, Beihai Ma, Uthamalingam Balachandran
  • PLZT CAPACITOR ON GLASS SUBSTRATE
    Publication number: 20150116894
    Abstract: A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.
    Type: Application
    Filed: October 29, 2013
    Publication date: April 30, 2015
    Inventors: M. RAY FAIRCHILD, RALPH S. TAYLOR, CARL W. BERLIN, CELINE WK WONG, BEIHAI MA, UTHAMALINGAM BALACHANDRAN