Patents by Inventor Cem ALPER

Cem ALPER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sensing device for sensing minor charge variations
    Patent number: 10818785
    Abstract: A charge sensing device for sensing charge variations in a charge storage area includes: a TFET having at least one sense gate; and a capacitive coupling for coupling the charge storage area with the sense gate.
    Type: Grant
    Filed: November 27, 2018
    Date of Patent: October 27, 2020
    Assignee: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
    Inventors: Cem Alper, Mihai Adrian Ionescu, Teodor Rosca
  • Sensing Device for Sensing Minor Charge Variations
    Publication number: 20190172937
    Abstract: The present invention relates to a charge sensing device for sensing charge variations in a charge storage area including: a TFET having at least one sense gate; a capacitive coupling for coupling the charge storage area with the sense gate.
    Type: Application
    Filed: November 27, 2018
    Publication date: June 6, 2019
    Inventors: Cem ALPER, Mihai Adrian IONESCU, Teodor ROSCA
  • Semiconductor tunneling device
    Patent number: 9768311
    Abstract: The present invention concerns a semiconductor tunneling Field-Effect device including a source, a drain, at least one elongated semiconductor structure extending in an elongated direction, a first gate, and a second gate. The first gate has a length extending in said elongated direction and is positioned on a first side of the at least one elongated semiconductor structure, and the second gate has a length extending in said elongated direction and is positioned on a second opposing side of the at least one elongated semiconductor structure. The first and second gates extend along the first and second sides of the at least one elongated semiconductor structure to define an overlap zone sandwiched between the first gate and the second gate, said overlap zone extending the full length of the first and/or second gate along the at least one elongated semiconductor structure.
    Type: Grant
    Filed: July 20, 2015
    Date of Patent: September 19, 2017
    Assignee: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
    Inventors: Cem Alper, Livio Lattanzio, Mihai Adrian Ionescu, Luca De Michielis, Nilay Dagtekin
  • SEMICONDUCTOR TUNNELING DEVICE
    Publication number: 20160043234
    Abstract: The present invention concerns a semiconductor tunneling Field-Effect device including a source, a drain, at least one elongated semiconductor structure extending in an elongated direction, a first gate, and a second gate. The first gate has a length extending in said elongated direction and is positioned on a first side of the at least one elongated semiconductor structure, and the second gate has a length extending in said elongated direction and is positioned on a second opposing side of the at least one elongated semiconductor structure. The first and second gates extend along the first and second sides of the at least one elongated semiconductor structure to define an overlap zone sandwiched between the first gate and the second gate, said overlap zone extending the full length of the first and/or second gate along the at least one elongated semiconductor structure.
    Type: Application
    Filed: July 20, 2015
    Publication date: February 11, 2016
    Inventors: Cem ALPER, Livio LATTANZIO, Mihai Adrian IONESCU, Luca DE MICHIELIS, Nilay DAGTEKIN