Patents by Inventor Cesar D. Capio

Cesar D. Capio has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Radiation mask structure
    Patent number: 4171489
    Abstract: The discovery that boron nitride and boron carbide films can be made in tension allows nondistorting radiation windows or masks to be realized. Both low and high pressure techniques for making the tensile films lead to related mask structures utilizing such films. The resulting structures are sufficiently distortion free to be useful for x-ray lithography.
    Type: Grant
    Filed: September 13, 1978
    Date of Patent: October 16, 1979
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Arthur C. Adams, Cesar D. Capio, Hyman J. Levinstein, Ashok K. Sinha, David N. Wang
  • Passivation of metallized semiconductor substrates
    Patent number: 4134125
    Abstract: Disclosed is a method and structure for protecting circuit components from the ambient and in particular for protecting the contact metal from the adverse effects of moisture. A first layer of amorphous silicon is deposited over the circuit including the metal contacts. A second layer which may be silicon nitride or silicon dioxide is then deposited over the amorphous silicon. The amorphous silicon layer reduces cracking in the second layer and prevents cracks in the second layer from propagating to the circuit components.
    Type: Grant
    Filed: July 20, 1977
    Date of Patent: January 9, 1979
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Arthur C. Adams, Cesar D. Capio, Hyman J. Levinstein, Shyam P. Murarka
  • Radial flow reactor including glow discharge limitting shield
    Patent number: RE30244
    Abstract: An improved radio frequency (rf) powered radial flow cylindrical reactor utilizes a gas shield which substantially limits the glow plasma discharge reaction to a section of the reactor over the semiconductor substrates which are to be coated. The gas shield permits the use of higher rf input power which contributes to the formation of protective films that have desirable physical and electrical characteristics.
    Type: Grant
    Filed: September 28, 1978
    Date of Patent: April 1, 1980
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Frank B. Alexander, Jr., Cesar D. Capio, Victor E. Hauser, Jr., Hyman J. Levinstein, Cyril J. Mogab, Ashok K. Sinha, Richard S. Wagner