Abstract: A layer including a topological insulator, the layer including: an arrangement of a plurality of patterns on a surface of the layer, each pattern of the plurality of patterns including at least a non-straight elongated portion. An electronic device including the layer including a topological insulator, and further including first and second electrodes on the layer. Further, the first and second electrodes may be configured to provide electrical connection to the layer. A method of controlling spin transport in the layer includes a topological insulator, the method including: applying circularly polarized light on the layer; and driving an electronic component with a photocurrent produced in the layer by the circularly polarized light.

Abstract: An is disclosed. The apparatus comprises a two-dimensional perovskite having a polaronic emission Stokes' shifted by at least 50 nm to minimise loss due to re-absorption.

Abstract: An apparatus for electro-magnetic wave detection is disclosed. The apparatus comprises a two-dimensional perovskite having a polaronic emission Stokes' shifted by at least 50 nm to minimise loss due to re-absorption.

Abstract: Various embodiments may provide a device for providing a first optical light of a first wavelength and a second optical light of a second wavelength. The device may include a halide perovskite structure including a first pattern and a second pattern different from the first pattern, so that the first pattern is configured to provide the first optical light of the first wavelength and the second pattern is configured to provide the second optical light of a second wavelength different from the first wavelength, upon a light incident on the first pattern and the second pattern. The halide perovskite structure may include a halide perovskite material.

Abstract: Various embodiments may provide a device for providing a first optical light of a first wavelength and a second optical light of a second wavelength. The device may include a halide perovskite structure including a first pattern and a second pattern different from the first pattern, so that the first pattern is configured to provide the first optical light of the first wavelength and the second pattern is configured to provide the second optical light of a second wavelength different from the first wavelength, upon a light incident on the first pattern and the second pattern. The halide perovskite structure may include a halide perovskite material.

Abstract: In various embodiments, a light-emitting device may be provided including an active structure including a halide perovskite layer. The light-emitting device may further include a first injection electrode and a second injection electrode electrically coupled to the active structure. The light-emitting device may additionally include a control electrode, and an insulator layer between the control electrode and the active structure. The first injection electrode may be configured to inject electrons into the active structure and the second injection electrode may be configured to inject holes into the active structure upon application of a potential difference between the first injection electrode and the second injection electrode. The control electrode may be configured to generate an electric field upon application of a voltage, thereby causing accumulation of the electrons and the holes in a region of the halide perovskite layer so that the electrons and the holes recombine, thereby emitting light.

Abstract: In various embodiments, a light-emitting device may be provided including an active structure including a halide perovskite layer. The light-emitting device may further include a first injection electrode and a second injection electrode electrically coupled to the active structure. The light-emitting device may additionally include a control electrode, and an insulator layer between the control electrode and the active structure. The first injection electrode may be configured to inject electrons into the active structure and the second injection electrode may be configured to inject holes into the active structure upon application of a potential difference between the first injection electrode and the second injection electrode. The control electrode may be configured to generate an electric field upon application of a voltage, thereby causing accumulation of the electrons and the holes in a region of the halide perovskite layer so that the electrons and the holes recombine, thereby emitting light.

Abstract: The invention relates generally to perovskite materials, and in particular, to copper perovskite materials. The invention further relates to solid-state integrated, lightweight, photovoltaic or light-emitting devices with an active layer based on the copper perovskite materials.

Abstract: A 1D nanowire photodetector device includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial electric field to inhibits photo-carrier recombination, thus enhancing the photocurrent response. Circuits of 1D nanowire photodetectors include groups of photodetectors addressed by their individual 1D nanowire electrode contacts. Placement of 1D nanostructures is accomplished with registration onto a substrate. A substrate is patterned with a material, e.g., photoresist, and trenches are formed in the patterning material at predetermined locations for the placement of 1D nanostructures. The 1D nanostructures are aligned in a liquid suspension, and then transferred into the trenches from the liquid suspension. Removal of the patterning material places the 1D nanostructures in predetermined, registered positions on the substrate.

Abstract: Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures.

Abstract: Improved processing methods for enhanced properties of conjugated polymer films are disclosed, as well as the enhanced conjugated polymer films produced thereby. Addition of low molecular weight alkyl-containing molecules to solutions used to form conjugated polymer films leads to improved photoconductivity and improvements in other electronic properties. The enhanced conjugated polymer films can be used in a variety of electronic devices, such as solar cells and photodiodes.

Abstract: A 1D nanowire photodetector device includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial electric field to inhibits photo-carrier recombination, thus enhancing the photocurrent response. Circuits of 1D nanowire include groups of photodetectors addressed by their individual 1D nanowire electrode contacts. Placement of 1D nanostructures is accomplished with registration onto a substrate. A substrate is patterned with a material, e.g., photoresist, and trenches are formed in the patterning material at predetermined locations for the placement of 1D nanostructures. The 1D nanostructures are aligned in a liquid suspension, and then transferred into the trenches from the liquid suspension. Removal of the patterning material places the 1D nanostructures in predetermined, registered positions on the substrate.

Abstract: Semiconductor nanowire arrays are used to replace the conventional planar layered construction for fabrication of LEDs and laser diodes. The nanowire arrays are formed from III-V or II-VI compound semiconductors on a conducting substrate. For fabrication of the device, an electrode layer is deposited on the substrate, a core material of one of a p-type and n-type compound semiconductor material is formed on top of the electrode as a planar base with a plurality of nanowires extending substantially vertically therefrom. A shell material of the other of the p-type and n-type compound semiconductor material is formed over an outer surface of the core material so that a p-n junction is formed across the planar base and over each of the plurality of nanowires. An electrode coating is formed an outer surface of the shell material for providing electrical contact to a current source.

Abstract: Improved processing methods for enhanced properties of conjugated polymer films are disclosed, as well as the enhanced conjugated polymer films produced thereby. Addition of low molecular weight alkyl-containing molecules to solutions used to form conjugated polymer films leads to improved photoconductivity and improvements in other electronic properties. The enhanced conjugated polymer films can be used in a variety of electronic devices, such as solar cells and photodiodes.

Abstract: Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures.

Abstract: Semiconductor nanowire arrays are used to replace the conventional planar layered construction for fabrication of LEDs and laser diodes. The nanowire arrays are formed from III-V or II-VI compound semiconductors on a conducting substrate. For fabrication of the device, an electrode layer is deposited on the substrate, a core material of one of a p-type and n-type compound semiconductor material is formed on top of the electrode as a planar base with a plurality of nanowires extending substantially vertically therefrom. A shell material of the other of the p-type and n-type compound semiconductor material is formed over an outer surface of the core material so that a p-n junction is formed across the planar base and over each of the plurality of nanowires. An electrode coating is formed an outer surface of the shell material for providing electrical contact to a current source.

Abstract: A practical ID nanowire photodetector with high gain that can be controlled by a radial electric field established in the ID nanowire. A ID nanowire photodetector device of the invention includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial electric field to the nanowire inhibits photo-carrier recombination, thus enhancing the photocurrent response. The invention further provides circuits of ID nanowire photodetectors, with groups of photodetectors addressed by their individual ID nanowires electrode contacts. The invention also provides a method for placement of ID nanostructures, including nanowires, with registration onto a substrate. A substrate is patterned with a material, e.g., photoresist, and trenches are formed in the patterning material at predetermined locations for the placement of ID nanostructures.

Abstract: Improved processing methods for enhanced properties of conjugated polymer films are disclosed, as well as the enhanced conjugated polymer films produced thereby. Addition of low molecular weight alkyl-containing molecules to solutions used to form conjugated polymer films leads to improved photoconductivity and improvements in other electronic properties. The enhanced conjugated polymer films can be used in a variety of electronic devices, such as solar cells and photodiodes.