Patents by Inventor Cevdet I. Noyan

Cevdet I. Noyan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ultra thin, single phase, diffusion barrier for metal conductors
    Patent number: 6452276
    Abstract: The present invention is directed to an alpha-W layer which is employed in interconnect structures such as trench capacitors or damascene wiring levels as a diffusion barrier layer. The alpha-W layer is a single phased material that is formed by a low temperature/pressure chemical vapor deposition process using tungsten hexacarbonyl, W(CO)6, as the source material.
    Type: Grant
    Filed: April 30, 1998
    Date of Patent: September 17, 2002
    Assignee: International Business Machines Corporation
    Inventors: Stephan A. Cohen, Fenton R. McFeely, Cevdet I. Noyan, Kenneth P. Rodbell, John J. Yurkas, Robert Rosenberg
  • Method for improving the morphology of refractory metal thin films
    Patent number: 6107199
    Abstract: A method of producing a smooth surface for a film of refractory metallic material is realized by placing a substrate in a CVD reactor; initiating deposition of a layer of two phase material via concurrent introduction into the CVD reactor of a precursor gas and molecular oxygen, the latter at a pressure between about 1.times.10.sup.-6 and 1.times.10.sup.-4 ; and annealing the treated layer at the deposition temperature.
    Type: Grant
    Filed: October 24, 1998
    Date of Patent: August 22, 2000
    Assignee: International Business Machines Corporation
    Inventors: Russell D. Allen, F. Read McFeely, Cevdet I. Noyan, John J. Yurkas