Abstract: Provided is a friction nano power generation synaptic transistor. The friction nano power generation synaptic transistor includes a friction nano generator, a synaptic transistor, a substrate, an electrode layer formed on the substrate, a shared intermediate layer formed on the electrode layer; a synaptic transistor active layer, a source electrode, and a drain electrode which are formed on the shared intermediate layer; and a positive friction layer and a negative friction layer formed on the shared intermediate layer, where the shared intermediate layer is used as a dielectric layer of the synaptic transistor and an intermediate layer of the friction nano generator.

Abstract: Provided are a micro-nano wire manufacturing device and a micro-nano structure. The micro-nano wire manufacturing device includes a liquid-phase nanomaterial storage device and a micro-nano wire applying mechanism. The liquid-phase nanomaterial storage device is provided with a liquid outlet. The micro-nano wire applying mechanism is provided in one-to-one correspondence with the liquid outlet. The micro-nano wire applying mechanism includes at least two flexible wires. The roots of the flexible wires are secured to the liquid-phase nanomaterial storage device. One ends of the two flexible wires hang down to a substrate and abut against each other. The range of the angle between the projections of the two flexible wires on the substrate is 1°to 5°.