Abstract: A semiconductor package comprising: a first semiconductor chip extending in each of first and second directions that intersect each other; a second semiconductor chip on the first semiconductor chip in a third direction perpendicular to the first and second directions, wherein the second semiconductor chip includes a first area and a second area that is adjacent to and extends around the first area; and a bump structure and a conductive material layer between the first and second semiconductor chips, wherein the conductive material layer is on the bump structure, wherein the bump structure includes a first bump structure overlapping the first area in the third direction, and a second bump structure overlapping the second area in the third direction, wherein the first and second bump structures are spaced apart from each other, and a thickness of the second bump structure is larger than a thickness of the first bump structure.

Abstract: A method for manufacturing a very low roughness copper foil and an apparatus for manufacturing the copper foil. In the method of the present invention, a pickling process, an electrolytic polishing process and a washing process are successively performed after the copper foil was manufactured. In order to manufacture the very low roughness copper foil, the electrolytic polishing process is accomplished with the copper foil to face a metal cathode plate and supplying a current in order to perform the electrolytic polishing.

Abstract: A method for manufacturing a very low roughness copper foil and an apparatus for manufacturing the copper foil. In the method of the present invention, a pickling process, an electrolytic polishing process and a washing process are successively performed after the copper foil was manufactured. In order to manufacture the very low roughness copper foil, the electrolytic polishing process is accomplished with the copper foil to face a metal cathode plate and supplying a current in order to perform the electrolytic polishing.

Abstract: The present invention relates to a method for manufacturing a low roughness electrodeposited copper foil, and an electrodeposited copper foil manufactured thereby, and uses an electrolyte which basically consists of a sulfuric acid, a copper ion and a chloride ion is adapted with an additive which consists of a HEC (Hydroxyethyl Cellulose) of 0.05˜50 ppm, a SPS (bis(sodiumsulfopropyl)disulfide) of 0.05˜20 ppm, and a gelatin of 0.1˜100 ppm. The present invention is adapted to manufacture a low roughness electrodeposited copper foil using a conventional copper foil manufacture facility and the electrodeposited copper foil according to the present invention is adapted as a material for a copper clad laminate for a printed circuit substrate and an electrode material for a lithium ion battery.