Patents by Inventor Cha Seung II

Cha Seung II has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Substrate having fullerene thin wires and method for manufacture thereof
    Patent number: 8685160
    Abstract: Provided is a fullerene thin wires-attached substrate in which fullerene thin wires are vertically aligned relative to the surface of the substrate and which is applicable to catalysts, column materials, chemical synthesis templates, field emission devices, field effect transistors, photonic crystals, etc.
    Type: Grant
    Filed: August 29, 2008
    Date of Patent: April 1, 2014
    Assignee: National Institute for Materials Science
    Inventors: Cha Seung, II, Kunichi Miyazawa, Jedeok Kim
  • SUBSTRATE HAVING FULLERENE THIN WIRES AND METHOD FOR MANUFACTURE THEREOF
    Publication number: 20110008571
    Abstract: Provided is a fullerene thin wires-attached substrate in which fullerene thin wires are vertically aligned relative to the surface of the substrate and which is applicable to catalysts, column materials, chemical synthesis templates, field emission devices, field effect transistors, photonic crystals, etc.
    Type: Application
    Filed: August 29, 2008
    Publication date: January 13, 2011
    Inventors: Cha Seung II, Kunichi Miyazawa, Jedeok Kim