Abstract: Provided is a method for preparing single-walled carbon nanotubes (SWCNTs), including the steps of: (a) depositing a metal catalyst in the form of single atom or atomic cluster on a catalyst support to prepare a single-atom catalyst or an atomic cluster catalyst; and (b) growing carbon nanotubes on the single-atom catalyst or the atomic cluster catalyst to prepare single-walled carbon nanotubes (SWCNTs). According to the method, it is possible to uniformly mass-produce single-walled carbon nanotubes (SWCNTs) having excellent heat conductivity, electroconductivity, mechanical strength, dispersibility, or the like.

Abstract: Disclosed are a light guide plate having an engraved pattern and a backlight unit having the same and a display device having the same, wherein the engraved pattern is configured such that a light incident surface thereof has an arc shape on a plane and a vertical section taken along a straight line passing through a center of the light incident surface is triangular. This makes it possible to maximize total reflection efficiency to increase luminous intensity of light output, resulting in improved light use efficiency and enhanced brightness of the backlight unit.

Abstract: Disclosed are a light guide plate having an engraved pattern and a backlight unit having the same and a display device having the same, wherein the engraved pattern is configured such that a light incident surface thereof has an arc shape on a plane and a vertical section taken along a straight line passing through a center of the light incident surface is triangular. This makes it possible to maximize total reflection efficiency to increase luminous intensity of light output, resulting in improved light use efficiency and enhanced brightness of the backlight unit.

Abstract: A light emitting diode (LED) and a method for fabricating the same are disclosed, the LED including the steps of successively forming a first epitaxial layer, an active layer, and a second epitaxial layer on a substrate; patterning the active layer and the second epitaxial layer to expose a predetermined area of the first epitaxial layer; increasing an amount of N on a predetermined area of the exposed first epitaxial layer to form a TiN layer and either an Au or Al layer on the TiN layer, so as to form a first electrtode of a bilayer structure; and forming a second electrode on a predetermined area of the second epitaxial layer.