Abstract: An image sensing device includes a pixel array including hybrid pixel groups that are arranged in rows and columns, each of the hybrid pixel groups including a plurality of color detection pixels and a plurality of distance detection pixels.

Abstract: An image sensor may include: a pixel array having a plurality of pixels arranged in a matrix structure; and an image array including a plurality of image dots which are arranged in a matrix structure, and implemented by output signals of the respective pixels. The position of a first pixel in the pixel array may not correspond to the position of an image dot corresponding to the first pixel in the image array, and the position of a second pixel adjacent to the first pixel in the pixel array may correspond to the position of an image dot corresponding to the second pixel in the image array.

Abstract: Disclosed is an image sensor, which includes a first PD isolation region for determining first to fourth PD regions, an FD isolation region formed between the first to fourth PD regions, and a floating diffusion formed in the FD isolation region. Horizontal distances from a perimeter of the floating diffusion to interfaces between the FD isolation region and the first to fourth PD regions are equal to each other.

Abstract: An image sensor, comprising: a photoelectric conversion element; a transfer transistor formed over the photoelectric conversion element; and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are trench-type transistors and are symmetrical structure to each other with respect to the gap, wherein the photoelectric conversion element is a continuous layer under both the transfer transistor and the reset transistor, and is completely below the transfer transistor and the reset transistor.

Abstract: An image sensor may include a pixel array. The pixel array may include a plurality of sub pixel arrays arranged two-dimensionally. Each of the plurality of sub pixel arrays may include a first pixel block and a second pixel block adjacent to the first pixel block in a row direction. Each of the first and second pixel blocks may include a light reception unit including first to fourth unit pixels arranged in a 2×2 matrix structure and a driving circuit. The driving circuit of the first pixel block may be positioned at an upper side of the light reception unit of the first pixel block, and the driving circuit of the second pixel block may be positioned at a lower side of the light reception unit of the first pixel block. The upper side of the first pixel block and an upper side of the second pixel block may be aligned with each other in the row direction, and a lower side of the first pixel block and the lower side of the second pixel block may be aligned with each other in the row direction.

Abstract: An image sensor may include a photoelectric conversion element, a transfer transistor formed over the photoelectric conversion element, and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are configured symmetrical to each other with respect to the gap.

Abstract: An image sensor may include a photoelectric conversion element, a transfer transistor formed over the photoelectric conversion element, and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are configured symmetrical to each other with respect to the gap.

Abstract: An image sensor may include a pixel array that includes a plurality of pixel blocks arranged in an M×N (where M and N are natural numbers) matrix structure, wherein, among the plurality of pixel blocks, when compared to any one pixel block as a first pixel block, any one pixel block as a second pixel block adjacent to the first pixel block in an M direction or an N direction has a planar shape that is obtained by inverting a planar shape of the first pixel block in the M direction. Each of the plurality of pixel blocks may include a light reception unit including a plurality of unit pixels which generate photocharges in response to incident light and are arranged in an m×n matrix structure to have a shared pixel structure; and a driving circuit suitable for outputting an image signal corresponding to the photocharges.

Abstract: An image sensor may include: a pixel array having a plurality of pixels arranged in a matrix structure; and an image array including a plurality of image dots which are arranged in a matrix structure, and implemented by output signals of the respective pixels. The position of a first pixel in the pixel array may not correspond to the position of an image dot corresponding to the first pixel in the image array, and the position of a second pixel adjacent to the first pixel in the pixel array may correspond to the position of an image dot corresponding to the second pixel in the image array.

Abstract: An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.

Abstract: An image sensor may include a pixel array that includes a plurality of pixel blocks arranged in an M×N (where M and N are natural numbers) matrix structure, wherein, among the plurality of pixel blocks, when compared to any one pixel block as a first pixel block, any one pixel block as a second pixel block adjacent to the first pixel block in an M direction or an N direction has a planar shape that is obtained by inverting a planar shape of the first pixel block in the M direction. Each of the plurality of pixel blocks may include a light reception unit including a plurality of unit pixels which generate photocharges in response to incident light and are arranged in an m×n matrix structure to have a shared pixel structure; and a driving circuit suitable for outputting an image signal corresponding to the photocharges.

Abstract: Disclosed is an image sensor, which includes a first PD isolation region for determining first to fourth PD regions, an FD isolation region formed between the first to fourth PD regions, and a floating diffusion formed in the FD isolation region. Horizontal distances from a perimeter of the floating diffusion to interfaces between the FD isolation region and the first to fourth PD regions are equal to each other.

Abstract: An image sensor may include a pixel array. The pixel array may include a plurality of sub pixel arrays arranged two-dimensionally, wherein each of the plurality of sub pixel arrays Including a plurality of pixel blocks arranged in an M×N (where M and N are natural numbers) matrix structure, and an (M,N+1) pixel block has a planar configuration obtained by inverting a planar configuration of the (M,N) pixel block in an N direction. Each of the plurality of pixel blocks may include a light reception unit including a plurality of unit pixels which generate photocharges in response to incident light and are arranged in an m×n (where m and n are natural numbers) matrix structure to have a shared pixel structure; and a driving circuit suitable for outputting an image signal corresponding to the photocharges.

Abstract: An image sensor includes a photoelectric conversion element including a first impurity region and a second impurity region, wherein the first impurity region contacts a first surface of a substrate, wherein the second impurity region has conductivity complementary to the first impurity region and is formed in the substrate and below the first impurity region; a pillar formed over the photoelectric conversion element; a transfer gate formed over the photoelectric conversion element to surround the pillar; and a channel layer formed between the transfer gate and the pillar and contacting the photoelectric conversion element, wherein the channel layer contacts the first impurity region and has the same conductivity as the second impurity region.

Abstract: A scaffold for a fitness stepper comprises a scaffolding plate configured to be installed on the fitness stepper and a mat attached on upper side of the scaffolding plate. The scaffolding plate comprises a separating prevention frame extended from edge of the scaffolding plate and surrounding the mat attached on the upper side of the scaffolding plate and a plurality of protrusions form on the upper side of the scaffolding plate. The mat comprises a plurality of bumps formed on an upper side of the mat, and a plurality of grooves between adjacent bumps of the plurality of bumps. The plurality of protrusion is arranged to form a grid pattern on the upper side of the scaffolding plate. Each protrusion of the plurality of protrusions has a right triangle shape having a right angle and a tilt angle with the upper side of the scaffolding plate.

Abstract: The present invention relates to a comprehensive fitness equipment leg press that allows a user to do a weight training leg press exercise for training a lower body of the user by the user sitting on a bench and pushing a footrest included in a footrest frame, which moves back and forth smoothly along a central frame for adjusting a weight of the footrest frame. The comprehensive fitness equipment leg press includes a weight adjusting unit from 10 kg to 200 kg through a hydraulic cylinder formed on a lower end of the bench, without using 15 10 kg weights, and a hydraulic cylinder rod connection installed on a body of a weight adjusting bar using a principle of a lever for adjusting the weight of the footrest of the footrest frame.

Abstract: This disclosure relates to a health machine including: a main body constructed with a bench frame, leg frame and hammer frame; a bench installed on the bench frame; a leg extension weight training part and an arm curl weight training part installed on the leg frame; a hammer bench weight training part installed on the hammer frame; an intensity adjustment rod connected to the bench frame; an intensity adjustment band movably fixed to the intensity adjustment rod; a hydraulic cylinder connected to the bench frame and to the intensity adjustment band; a leg bar connected to the intensity adjustment rod and to the leg extension weight training part; an elastic member fixed to the bench frame and to the leg extension weight training part; an intensity adjustment band movably fixed to the intensity adjustment rod; and a hydraulic cylinder connected to the hammer frame and to the intensity adjustment band.

Abstract: An image sensor may include a photoelectric conversion element, a transfer transistor formed over the photoelectric conversion element, and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are configured symmetrical to each other with respect to the gap.

Abstract: An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.

Abstract: This technology provides an image sensor and an electronic device including the same. In an image sensor including a pixel array including a plurality of unit pixels, each of the plurality of unit pixels may include a photoelectric conversion element and a pixel lens over the photoelectric conversion element and comprising a plurality of light condensing layers in which a lower layer has a larger area than an upper layer, wherein the pixel lens has a shape changing based on a position of a corresponding unit pixel from a center of the pixel array to an edge of the pixel array.