Abstract: A semiconductor process is disclosed, wherein before photoresist is coated on a substrate, a chemical is applied to dampen the substrate. Further, the chemical is applied on the substrate while the substrate is kept in a spinning state. In addition, a photoresist coating process is also provided. Wherein, a substrate is spun at a first speed. Then, a chemical is applied to dampen the surface of the spinning substrate. Next, the photoresist is coated on the surface of the substrate. The present invention can prevent defects in the formed photoresist layer during the coating process and therefore enhance the yield of the subsequent semiconductor process.