Patents by Inventor Chad E. Germany

Chad E. Germany has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Local doping of two-dimensional materials
    Patent number: 9449851
    Abstract: This disclosure provides systems, methods, and apparatus related to locally doping two-dimensional (2D) materials. In one aspect, an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a 2D material disposed on the second insulator is formed. A first voltage is applied between the 2D material and the substrate. With the first voltage applied between the 2D material and the substrate, a second voltage is applied between the 2D material and a probe positioned proximate the 2D material. The second voltage between the 2D material and the probe is removed. The first voltage between the 2D material and the substrate is removed. A portion of the 2D material proximate the probe when the second voltage was applied has a different electron density compared to a remainder of the 2D material.
    Type: Grant
    Filed: August 24, 2015
    Date of Patent: September 20, 2016
    Assignee: The Regents of the University of California
    Inventors: Dillon Wong, Jairo Velasco, Jr., Long Ju, Salman Kahn, Juwon Lee, Chad E. Germany, Alexander K. Zettl, Feng Wang, Michael F. Crommie
  • LOCAL DOPING OF TWO-DIMENSIONAL MATERIALS
    Publication number: 20160064249
    Abstract: This disclosure provides systems, methods, and apparatus related to locally doping two-dimensional (2D) materials. In one aspect, an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a 2D material disposed on the second insulator is formed. A first voltage is applied between the 2D material and the substrate. With the first voltage applied between the 2D material and the substrate, a second voltage is applied between the 2D material and a probe positioned proximate the 2D material. The second voltage between the 2D material and the probe is removed. The first voltage between the 2D material and the substrate is removed. A portion of the 2D material proximate the probe when the second voltage was applied has a different electron density compared to a remainder of the 2D material.
    Type: Application
    Filed: August 24, 2015
    Publication date: March 3, 2016
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Dillon Wong, Jairo Velasco, JR., Long Ju, Salman Kahn, Juwon Lee, Chad E. Germany, Alexander K. Zettl, Feng Wang, Michael F. Crommie