Abstract: The present invention provides methods and apparatus which permit the in-process, in-situ, substantially real time measurement of the actual thickness of a surface layer of a workpiece, e.g., a semiconductor wafer. A probe is disposed proximate the outer perimeter of a polishing pad on a CMP table such that the probe establishes optical contact with the wafer surface as a portion of the wafer extends beyond the outer perimeter of the polishing pad. A reflected signal received by the probe is analyzed to calculate the thickness of the surface layer. Alternatively, the reflective characteristics of the semiconductor layers may affect the nature of the reflected signal; changes in the reflected signal can be detected to indicate when a metallic layer has been removed from an oxide layer.

Abstract: The present invention provides methods and apparatus which permit the in-process, in-situ, substantially real time measurement of the actual thickness of a surface layer of a workpiece, e.g., a semiconductor wafer. A probe is disposed proximate the outer perimeter of a polishing pad on a CMP table such that the probe establishes optical contact with the wafer surface as a portion of the wafer extends beyond the outer perimeter of the polishing pad. A reflected signal received by the probe is analyzed to calculate the thickness of the surface layer. Alternatively, the reflective characteristics of the semiconductor layers may affect the nature of the reflected signal; changes in the reflected signal can be detected to indicate when a metallic layer has been removed from an oxide layer.

Abstract: The present invention relates to a wafer cleaning machine having an input station, a water track, a cleaning station, a rinsing station, a spin-dry station, and a load station. The input station includes two or more wafer supply areas for a continuous supply of wafers to the water track. After the wafers enter the water track from the input station, the wafers are transported down the track into the wafer cleaning station. The wafer cleaning station comprises a plurality of pairs of rollers which pull the wafers through the cleaning station and thereby clean the top and bottom flat surfaces of the wafers. A one-piece cleaning fluid manifold formed within the upper panel of the cleaning station facilitates effective distribution of the cleaning fluid to the rollers. From the cleaning station, the wafers are transported to a rinse station. From the rinsing station, the workpieces are transferred to a dual spin-dry station.