Abstract: Methods for forming black phosphorus alloys and exfoliating black phosphorus alloys. A method for forming black phosphorus alloys includes providing phosphorus inside a vessel and providing an element inside the vessel. Media is provided inside the vessel and the phosphorus, the element, and the media are sealed under a gas within the vessel. The phosphorus and the element are mechanically milled with the media to produce black phosphorus that is covalently bonded with the element. A method for exfoliating a black phosphorus alloy includes mixing a milled black phosphorus alloy with a solvent and mixing a milled black phosphorus alloy with a solvent. The milled black phosphorus alloy and solvent mixture are then extracted from the milling apparatus, which may be a planetary ball mill, a vibratory mill, a tumbler ball mill, a mixer mill, a rod mill, an attrition mill, or a shaker mill.

Abstract: A semiconductor optical device is comprised of a phonon donating material structurally connected to an indirect bandgap material to improve absorption and emission of light in the indirect bandgap material. An excitation energy source provides excitation radiation to the semiconductor optical device to excite electrons in the semiconductor optical device. Phonons from the phonon donating material present in the indirect bandgap material provide a mechanism for increased rates of electron-hole generation and recombination, and electrical leads provide an electrical connection to the semiconductor optical device.

Abstract: A semiconductor optical device is comprised of a phonon donating material structurally connected to an indirect bandgap material to improve absorption and emission of light in the indirect bandgap material. An excitation energy source provides excitation radiation to the semiconductor optical device to excite electrons in the semiconductor optical device. Phonons from the phonon donating material present in the indirect bandgap material provide a mechanism for increased rates of electron-hole generation and recombination, and electrical leads provide an electrical connection to the semiconductor optical device.

Abstract: Hybrid silicon lasers and amplifiers having resonator cavities within a silicon substrate and a two-dimensional material film on the substrate as an optical gain medium are described. The two-dimensional material film may be formed of one or more atomic layers of phosphorene (BP). The number of phosphorene layers may be adjusted to tune the emission wavelength of the hybrid devices.

Abstract: Hybrid silicon lasers and amplifiers having resonator cavities within a silicon substrate and a two-dimensional material film on the substrate as an optical gain medium are described. The two-dimensional material film may be formed of one or more atomic layers of phosphorene (BP). The number of phosphorene layers may be adjusted to tune the emission wavelength of the hybrid devices.

Abstract: Exemplary embodiments of an apparatus, method, and computer readable medium are provided for producing a radiation. For example, a radiation having at least one pulse with a pulse-width of less than approximately 30 picoseconds can be produced using a photonic crystal waveguide arrangement which is (i) specifically structured and sized so as to be placed on an integrated circuit, and (ii) configured to produce the radiation having at least one pulse with a pulse-width of less than approximately 30 picoseconds.

Abstract: Some embodiments of the disclosed subject matter provide systems, devices, and methods for tuning resonant wavelengths of an optical resonator. Some embodiments of the disclosed subject matter provide systems, devices, and methods for tuning dispersion properties of photonic crystal waveguides. In some embodiments, methods for tuning a resonant wavelength of an optical resonator are provided, the methods including: providing an optical resonator having a surface; determining an initial resonant wavelength emitted by the optical resonator in response to an electromagnetic radiation input; determining a number of layers of dielectric material based on a difference between the initial resonant wavelength and a target resonant wavelength and a predetermined tuning characteristic; and applying the determined number of layers of dielectric material to the surface of the optical resonator to tune the initial resonant wavelength to a tuned resonant wavelength.

Abstract: Exemplary embodiments of an apparatus, method, and computer readable medium are provided for producing a radiation. For example, a radiation having at least one pulse with a pulse-width of less than approximately 30 picoseconds can be produced using a photonic crystal waveguide arrangement which is (i) specifically structured and sized so as to be placed on an integrated circuit, and (ii) configured to produce the radiation having at least one pulse with a pulse-width of less than approximately 30 picoseconds.

Abstract: Some embodiments of the disclosed subject matter provide systems, devices, and methods for tuning resonant wavelengths of an optical resonator. Some embodiments of the disclosed subject matter provide systems, devices, and methods for tuning dispersion properties of photonic crystal waveguides. In some embodiments, methods for tuning a resonant wavelength of an optical resonator are provided, the methods including: providing an optical resonator having a surface; determining an initial resonant wavelength emitted by the optical resonator in response to an electromagnetic radiation input; determining a number of layers of dielectric material based on a difference between the initial resonant wavelength and a target resonant wavelength and a predetermined tuning characteristic; and applying the determined number of layers of dielectric material to the surface of the optical resonator to tune the initial resonant wavelength to a tuned resonant wavelength.