Abstract: An apparatus and method for depositing an aerosol that has an ultrafast pneumatic, shutter. The flow of aerosol through the entire deposition flow path is surrounded by at least one sheath gas, thereby greatly increasing reliability. The distance between the aerosol switching chamber and a reverse gas flow chamber input is minimized to reduce switching time. The distance from the switching chamber to the nozzle exit is also minimized to reduce switching time. The gas flows in the system are configured to maintain a substantially constant pressure in the system, and consequently substantially constant flow rates through the deposition nozzle and exhaust nozzle, to minimize on/off switching times. This enables the system to have a switching time of less than 10 ms.

Abstract: An apparatus and method for depositing an aerosol that has an ultrafast pneumatic, shutter. The flow of aerosol through the entire deposition flow path is surrounded by at least one sheath gas, thereby greatly increasing reliability. The distance between the aerosol switching chamber and a reverse gas flow chamber input is minimized to reduce switching time. The distance from the switching chamber to the nozzle exit is also minimized to reduce switching time. The gas flows in the system are configured to maintain a substantially constant pressure in the system, and consequently substantially constant flow rates through the deposition nozzle and exhaust nozzle, to minimize on/off switching times. This enables the system to have a switching time of less than 10 ms.

Abstract: The present invention provides deposition sources, systems, and related methods that can efficiently and controllably provide vaporized material for deposition of thin-film materials. The deposition sources, systems and related methods described herein can be used to deposit any desired material and are particularly useful for depositing high vapor pressure materials such as selenium in the manufacture of copper indium gallium diselenide based photovoltaic devices.

Abstract: The present invention provides deposition sources, systems, and related methods that can efficiently and controllably provide vaporized material for deposition of thin-film materials. The deposition sources, systems and related methods described herein can be used to deposit any desired material and are particularly useful for depositing high vapor pressure materials such as selenium in the manufacture of copper indium gallium diselenide based photovoltaic devices.

Abstract: Vapor depositions sources, systems, and related deposition methods. Vapor deposition sources for use with materials that evaporate or sublime in a difficult to control or otherwise unstable manner are provided. The present invention is particularly applicable to deposition of organic material such as those for forming one or more layer in organic light emitting devices.

Abstract: Vapor depositions sources, systems, and related deposition methods. Vapor deposition sources for use with materials that evaporate or sublime in a difficult to control or otherwise unstable manner are provided. The present invention is particularly applicable to deposition of organic material such as those for forming one or more layer in organic light emitting devices.