Patents by Inventor Chad Patrick Blessing

Chad Patrick Blessing has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CAPACITOR AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20160013191
    Abstract: A capacitor includes a substrate, a multilayer over the substrate, a plurality of container-shaped storage node structures on the semiconductor substrate and surrounded by the multilayer, the storage node structure has a sidewall extending upwardly from the base to the top, where the sidewall includes an upper segment and a lower segment thinner than the upper segment, a capacitor dielectric material along a surface of each storage node structure, and a capacitor electrode material over the capacitor dielectric material.
    Type: Application
    Filed: September 21, 2015
    Publication date: January 14, 2016
    Inventors: Sanjeev Sapra, Brett W. Busch, Jian Li, Chad Patrick Blessing, Greg Allen Funston
  • Capacitor and method of manufacturing the same
    Patent number: 9230966
    Abstract: A capacitor includes a substrate, a multilayer over the substrate, a plurality of container-shaped storage node structures on the semiconductor substrate and surrounded by the multilayer, the storage node structure has a sidewall extending upwardly from the base to the top, where the sidewall includes an upper segment and a lower segment thinner than the upper segment, a capacitor dielectric material along a surface of each storage node structure, and a capacitor electrode material over the capacitor dielectric material.
    Type: Grant
    Filed: April 9, 2014
    Date of Patent: January 5, 2016
    Assignee: NANYA TECHNOLOGY CORP.
    Inventors: Sanjeev Sapra, Brett W. Busch, Jian Li, Chad Patrick Blessing, Greg Allen Funston
  • CAPACITOR AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20150294971
    Abstract: A capacitor includes a substrate, a multilayer over the substrate, a plurality of container-shaped storage node structures on the semiconductor substrate and surrounded by the multilayer, the storage node structure has a sidewall extending upwardly from the base to the top, where the sidewall includes an upper segment and a lower segment thinner than the upper segment, a capacitor dielectric material along a surface of each storage node structure, and a capacitor electrode material over the capacitor dielectric material.
    Type: Application
    Filed: April 9, 2014
    Publication date: October 15, 2015
    Applicant: NANYA TECHNOLOGY CORP.
    Inventors: Sanjeev Sapra, Brett W. Busch, Jian Li, Chad Patrick Blessing, Greg Allen Funston