Patents by Inventor Chad Peterson
Chad Peterson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220380898Abstract: A gas distribution plate for a showerhead assembly of a processing chamber may include at least a first plate and second plate. The first plate may include a first plurality holes each having a diameter of at least about 100 um. The second plate may include a second plurality of holes each having a diameter of at least about 100 um. Further, each of the first plurality of holes is aligned with a respective one of the second plurality of holes forming a plurality of interconnected holes. Each of the interconnected holes is isolated from each other interconnected holes.Type: ApplicationFiled: May 16, 2022Publication date: December 1, 2022Inventors: Sumit AGARWAL, Sanjeev BALUJA, Chad PETERSON, Michael R. RICE
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Patent number: 11332827Abstract: A gas distribution plate for a showerhead assembly of a processing chamber may include at least a first plate and second plate. The first plate may include a first plurality holes each having a diameter of at least about 100 um. The second plate may include a second plurality of holes each having a diameter of at least about 100 um. Further, each of the first plurality of holes is aligned with a respective one of the second plurality of holes forming a plurality of interconnected holes. Each of the interconnected holes is isolated from each other interconnected holes.Type: GrantFiled: February 26, 2020Date of Patent: May 17, 2022Assignee: Applied Materials, Inc.Inventors: Sumit Agarwal, Sanjeev Baluja, Chad Peterson, Michael R. Rice
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Patent number: 11111582Abstract: A showerhead assembly includes a support structure and a porous plate. The support structure includes a support feature. The porous plate has a thermal conductivity of at least about 50 W/(mK) and includes a plurality of pores having an average diameter of less than about 100 um, wherein at least a portion of a perimeter of the porous plate rests on the support feature. The showerhead may be included within a processing chamber that is utilized to process a substrate.Type: GrantFiled: March 3, 2020Date of Patent: September 7, 2021Assignee: Applied Materials, Inc.Inventors: Sumit Agarwal, Chad Peterson, Marc Shull
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Publication number: 20200308703Abstract: A gas distribution plate for a showerhead assembly of a processing chamber may include at least a first plate and second plate. The first plate may include a first plurality holes each having a diameter of at least about 100 um. The second plate may include a second plurality of holes each having a diameter of at least about 100 um. Further, each of the first plurality of holes is aligned with a respective one of the second plurality of holes forming a plurality of interconnected holes. Each of the interconnected holes is isolated from each other interconnected holes.Type: ApplicationFiled: February 26, 2020Publication date: October 1, 2020Inventors: Sumit AGARWAL, Sanjeev BALUJA, Chad PETERSON, Michael R. RICE
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Publication number: 20200283900Abstract: A showerhead assembly includes a support structure and a porous plate. The support structure includes a support feature. The porous plate has a thermal conductivity of at least about 50 W/(mK) and includes a plurality of pores having an average diameter of less than about 100 um, wherein at least a portion of a perimeter of the porous plate rests on the support feature. The showerhead may be included within a processing chamber that is utilized to process a substrate.Type: ApplicationFiled: March 3, 2020Publication date: September 10, 2020Inventors: Sumit AGARWAL, Chad PETERSON, Marc SHULL
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Patent number: 7951730Abstract: Methods for forming silicon nitride hard masks are provided. The silicon nitride hard masks include carbon-doped silicon nitride layers and undoped silicon nitride layers. Carbon-doped silicon nitride layers that are deposited from a mixture comprising a carbon source compound, a silicon source compound, and a nitrogen source in the presence of RF power are provided. Also provided are methods of UV post-treating silicon nitride layers to provide silicon nitride hard masks. The carbon-doped silicon nitride layers and UV post-treated silicon nitride layers have desirable wet etch rates and dry etch rates for hard mask layers.Type: GrantFiled: February 4, 2009Date of Patent: May 31, 2011Assignee: Applied Materials, Inc.Inventors: Ritwik Bhatia, Li-Qun Xia, Chad Peterson, Hichem M'Saad
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Patent number: 7851384Abstract: Methods are provided for processing a substrate comprising a bilayer barrier film thereon. In one aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on the first barrier layer, depositing a dielectric layer on the bilayer barrier film formed by the first barrier layer and the second barrier layer, and ultraviolet curing the dielectric layer. In another aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on the first barrier layer, depositing a dielectric layer on the bilayer barrier film formed by the first barrier layer and the second barrier layer, and curing the dielectric layer with an electron beam treatment.Type: GrantFiled: May 21, 2007Date of Patent: December 14, 2010Assignee: Applied Materials, Inc.Inventors: Yijun Liu, Huiwen Xu, Li-Qun Xia, Chad Peterson, Hichem M'Saad
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Publication number: 20090137132Abstract: Methods for forming silicon nitride hard masks are provided. The silicon nitride hard masks include carbon-doped silicon nitride layers and undoped silicon nitride layers. Carbon-doped silicon nitride layers that are deposited from a mixture comprising a carbon source compound, a silicon source compound, and a nitrogen source in the presence of RF power are provided. Also provided are methods of UV post-treating silicon nitride layers to provide silicon nitride hard masks. The carbon-doped silicon nitride layers and UV post-treated silicon nitride layers have desirable wet etch rates and dry etch rates for hard mask layers.Type: ApplicationFiled: February 4, 2009Publication date: May 28, 2009Inventors: Ritwik Bhatia, Li-Qun Xia, Chad Peterson, Hichem M'Saad
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Patent number: 7501355Abstract: Methods for forming silicon nitride hard masks are provided. The silicon nitride hard masks include carbon-doped silicon nitride layers and undoped silicon nitride layers. Carbon-doped silicon nitride layers that are deposited from a mixture comprising a carbon source compound, a silicon source compound, and a nitrogen source in the presence of RF power are provided. Also provided are methods of UV post-treating silicon nitride layers to provide silicon nitride hard masks. The carbon-doped silicon nitride layers and UV post-treated silicon nitride layers have desirable wet etch rates and dry etch rates for hard mask layers.Type: GrantFiled: June 29, 2006Date of Patent: March 10, 2009Assignee: Applied Materials, Inc.Inventors: Ritwik Bhatia, Li-Qun Xia, Chad Peterson, Hichem M'Saad
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Publication number: 20080014761Abstract: Methods for forming silicon nitride hard masks are provided. The silicon nitride hard masks include carbon-doped silicon nitride layers and undoped silicon nitride layers. Carbon-doped silicon nitride layers that are deposited from a mixture comprising a carbon source compound, a silicon source compound, and a nitrogen source in the presence of RF power are provided. Also provided are methods of UV post-treating silicon nitride layers to provide silicon nitride hard masks. The carbon-doped silicon nitride layers and UV post-treated silicon nitride layers have desirable wet etch rates and dry etch rates for hard mask layers.Type: ApplicationFiled: June 29, 2006Publication date: January 17, 2008Inventors: Ritwik Bhatia, Li-Qun Xia, Chad Peterson, Hichem M'Saad
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Publication number: 20070281497Abstract: Methods are provided for processing a substrate comprising a bilayer barrier film thereon. In one aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on the first barrier layer, depositing a dielectric layer on the bilayer barrier film formed by the first barrier layer and the second barrier layer, and ultraviolet curing the dielectric layer. In another aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on the first barrier layer, depositing a dielectric layer on the bilayer barrier film formed by the first barrier layer and the second barrier layer, and curing the dielectric layer with an electron beam treatment.Type: ApplicationFiled: May 21, 2007Publication date: December 6, 2007Inventors: Yijun Liu, Huiwen Xu, Li-Qun Xia, Chad Peterson, Hichem M'saad
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Publication number: 20070202640Abstract: A method of forming source and drain regions in a semiconductor transistor. The method includes the steps of forming a first sidewall spacer on sidewall surfaces of a gate electrode that is formed on an underlying substrate, where the first sidewall spacer includes amorphous carbon. The method may also include implanting the source and drain regions in the semiconductor substrate, and removing the first sidewall spacer before annealing the source and drain regions. The method may still further include forming a second sidewall spacer on the sidewall surfaces of the gate electrode, where the second sidewall spacer has a k-value less than 4. Also, a method to enhance conformality of a sidewall spacer layer. The method may include the steps of pulsing a radio-frequency power source to generate periodically a plasma, and depositing the plasma on sidewall surfaces of a gate electrode to form the sidewall spacer layer.Type: ApplicationFiled: February 28, 2006Publication date: August 30, 2007Applicant: Applied Materials, Inc.Inventors: Amir Al-Bayati, Reza Arghavani, Mei-Yee Shek, Li-Qun Xia, Mihaela Balseanu, Bok Kim, Michael Cox, Chad Peterson, Hichem M'Saad
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Publication number: 20060093756Abstract: A method for seasoning a deposition chamber wherein the chamber components and walls are densely coated with a material that does not contain carbon prior to deposition of an organo-silicon material on a substrate. An optional carbon-containing layer may be deposited therebetween. A chamber cleaning method using low energy plasma and low pressure to remove residue from internal chamber surfaces is provided and may be combined with the seasoning process.Type: ApplicationFiled: November 3, 2004Publication date: May 4, 2006Inventors: Nagarajan Rajagopalan, Li-Qun Xia, Mihaela Balseanu, Thomas Nowak, Ranjana Shah, Huiwen Xu, Chad Peterson, Derek Witty, Hichem M'Saad
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Patent number: 6667248Abstract: A method is provided for forming a fluorinated silicate glass layer with HDP-CVD having a lower dielectric constant without compromising the mechanical properties of hardness and compressive stress. A gaseous mixture comprising a silicon-containing gas, an oxygen-containing gas, and a fluorine-containing gas is provided to a process chamber. The ratio of the flow rate of the fluorine-containing gas to the flow rate of the silicon-containing gas is greater than 0.65. A high-density plasma is generated from the gaseous mixture by applying a source RF power having a power density less than 12 W/cm2. A bias is applied to a substrate in the process chamber at a bias power density greater than 0.8 W/cm2 and less than 2.4 W/cm2. The fluorinated silicate glass layer is deposited onto the substrate using the high-density plasma.Type: GrantFiled: September 5, 2001Date of Patent: December 23, 2003Assignee: Applied Materials Inc.Inventors: Hichem M'Saad, Chad Peterson, Zhuang Li, Anchuan Wang, Farhad Moghadam
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Publication number: 20030050724Abstract: A method is provided for forming a fluorinated silicate glass layer with HDP-CVD having a lower dielectric constant without compromising the mechanical properties of hardness and compressive stress. A gaseous mixture comprising a silicon-containing gas, an oxygen-containing gas, and a fluorine-containing gas is provided to a process chamber. The ratio of the flow rate of the fluorine-containing gas to the flow rate of the silicon-containing gas is greater than 0.65. A high-density plasma is generated from the gaseous mixture by applying a source RF power having a power density less than 12 W/cm2. A bias is applied to a substrate in the process chamber at a bias power density greater than 0.8 W/cm2 and less than 2.4 W/cm2. The fluorinated silicate glass layer is deposited onto the substrate using the high-density plasma.Type: ApplicationFiled: September 5, 2001Publication date: March 13, 2003Applicant: Applied Materials, Inc.Inventors: Hichem M'Saad, Chad Peterson, Zhuang Li, Anchuan Wang, Farhad Moghadam