Patents by Inventor Chad S. Watson

Chad S. Watson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Data storage methods and devices
    Patent number: 8670267
    Abstract: A data storage method includes writing data to a ferromagnetic shape-memory material in its ferromagnetic state, the material exhibiting more than two stable states. A data storage device includes a non-volatile memory element containing a ferromagnetic shape-memory alloy in a martensite state, the shape-memory alloy being ferromagnetic in a plurality of stable states of the memory element.
    Type: Grant
    Filed: March 19, 2012
    Date of Patent: March 11, 2014
    Assignee: Boise State University
    Inventors: Chad S. Watson, William B. Knowlton, Peter Müllner
  • DATA STORAGE METHODS AND DEVICES
    Publication number: 20120236632
    Abstract: A data storage method includes writing data to a ferromagnetic shape-memory material in its ferromagnetic state, the material exhibiting more than two stable states. A data storage device includes a non-volatile memory element containing a ferromagnetic shape-memory alloy in a martensite state, the shape-memory alloy being ferromagnetic in a plurality of stable states of the memory element.
    Type: Application
    Filed: March 19, 2012
    Publication date: September 20, 2012
    Inventors: Chad S. Watson, William B. Knowlton, Peter Müllner
  • Method for anodically bonding glass and semiconducting material together
    Patent number: 6660614
    Abstract: A method is provided for anodically bonding glass and semiconducting material. A glass sample is immersed in a molten salt bath for a fixed period of time to modify the surface of the glass sample via ion exchange. The salt is a lithium salt or a proton source. After the glass sample is removed from the salt bath, the glass sample and semiconducting material are placed onto one another, and are then heated to a temperature of between 100° C. and 500° C. While at this temperature, a potential is applied across the glass and semiconducting material for a fixed period of time to effect anodic bonding together of the glass and semiconducting material.
    Type: Grant
    Filed: May 4, 2001
    Date of Patent: December 9, 2003
    Assignee: New Mexico Tech Research Foundation
    Inventors: Deidre A. Hirschfeld, W Kent Schubert, Chad S. Watson
  • Method for anodically bonding glass and semiconducting material together
    Publication number: 20030092243
    Abstract: A method is provided for anodically bonding glass and semiconducting material. A glass sample is immersed in a molten salt bath for a fixed period of time to modify the surface of the glass sample via ion exchange. The salt is a lithium salt or a proton source. After the glass sample is removed from the salt bath, the glass sample and semiconducting material are placed onto one another, and are then heated to a temperature of between 100° C. and 500° C. While at this temperature, a potential is applied across the glass and semiconducting material for a fixed period of time to effect anodic bonding together of the glass and semiconducting material.
    Type: Application
    Filed: May 4, 2001
    Publication date: May 15, 2003
    Applicant: New Mexico Tech Research Foundation
    Inventors: Deidre A. Hirschfeld, W. Kent Schubert, Chad S. Watson