Patents by Inventor Chadwick L. Canedy
Chadwick L. Canedy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230261442Abstract: Semiconductor laser architectures that provide weak index guiding of interband cascade lasers (ICLs) processed on a native III-V substrate and of ICLs grown on GaAs or integrated on GaAs by heterogeneous bonding. Weak index guiding of a ridge waveguide semiconductor laser can enhance the stability of lasing in the fundamental lateral mode, so as to allow a wider ridge to maintain stable single-lateral-mode operation.Type: ApplicationFiled: February 8, 2023Publication date: August 17, 2023Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Jerry R. Meyer, Alexander Spott, Vijaysekhar Jayaraman, Chul Soo Kim, Mijin Kim, Chadwick L. Canedy, Charles D. Merritt, William W. Bewley, Igor Vurgaftman
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Publication number: 20230231364Abstract: Semiconductor laser architectures that provide weak index guiding of interband cascade lasers (ICLs) processed on a native III-V substrate and of ICLs grown on silicon or integrated on silicon by heterogeneous bonding. Weak index guiding of a ridge waveguide semiconductor laser can enhance the stability of lasing in the fundamental lateral mode, so as to allow a wider ridge to maintain stable single-lateral-mode operation.Type: ApplicationFiled: January 4, 2023Publication date: July 20, 2023Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Jerry R. Meyer, Alexander Spott, Chul Soo Kim, Mijin Kim, Chadwick L. Canedy, Charles D. Merritt, William W. Bewley, Igor Vurgaftman
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DETUNED ANTINODE ENHANCEMENT FOR IMPROVED TEMPERATURE INDEPENDENCE IN INFRARED LIGHT EMITTING DIODES
Publication number: 20220375905Abstract: Improved temperature independence in infrared light emitting diodes (IRLEDs). The active stage groups (ASGs) occur at or at an integer multiple of each antinode of the e-field of the desired center wavelength. The structure is designed to yield increased efficiency at low (cryogenic) temperatures with a wide range of operational temperature independence. The structure may be designed to provide a wide range of temperature independent operation near room temperature. The spacing (S) between the centers of the active stage groups may be varied to create a more broad and shallow peak of the temperature dependence of the antinode enhancement. The IRLED may be an interband cascade LED.Type: ApplicationFiled: May 10, 2022Publication date: November 24, 2022Inventors: Joseph D LaVeigne, Thomas E Danielson, Igor Vurgaftman, Chadwick L Canedy, Mijin Kim, Chul Soo Kim, William W Bewley, Charles D Merritt, Jerry R Meyer -
Publication number: 20130003770Abstract: A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 ?m at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.Type: ApplicationFiled: September 10, 2012Publication date: January 3, 2013Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Igor Vurgaftman, Jerry R. Meyer, Chadwick L. Canedy, William W. Bewley, James R. Lindle, Chul-soo Kim, Mijin Kim
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Patent number: 8290011Abstract: A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 ?m at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.Type: GrantFiled: February 9, 2011Date of Patent: October 16, 2012Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Igor Vurgaftman, Jerry R. Meyer, Chadwick L. Canedy, William W. Bewley, James R. Lindle, Chul-soo Kim, Mijin Kim
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Publication number: 20120128018Abstract: A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 ?m at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.Type: ApplicationFiled: February 9, 2011Publication date: May 24, 2012Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Igor Vurgaftman, Jerry R. Meyer, Chadwick L. Canedy, William W. Bewley, James R. Lindle, Chul-soo Kim, Mijin Kim
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Publication number: 20120127564Abstract: An interband cascade gain medium is provided. The gain medium can include at least one thick separate confinement layer comprising Ga(InAlAs)Sb between the active gain region and the cladding and can further include an electron injector region having a reduced thickness, a hole injector region comprising two hole quantum wells having a total thickness greater than about 100 ?, an active gain quantum well region separated from the adjacent hole injector region by an electron barrier having a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states, and a thick AlSb barrier separating the electron and hole injectors of at least one stage of the active region.Type: ApplicationFiled: January 19, 2012Publication date: May 24, 2012Applicant: The Government of the United of America, as represented by the Secretary of the NavyInventors: Igor Vurgaftman, Jerry R. Meyer, Chadwick L. Canedy, William W. Bewley, James R. Lindle, Chul-soo Kim, Mijin Kim
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Patent number: 8125706Abstract: A gain medium and an interband cascade laser, an interband cascade amplifier, and an external cavity laser having the gain medium are presented.Type: GrantFiled: March 12, 2009Date of Patent: February 28, 2012Assignee: The United States of America as represented by the Secretary of the NavyInventors: Igor Vurgaftman, Jerry R Meyer, Chadwick L. Canedy, William W. Bewley, James R. Lindle, Chul-soo Kim, Mijin Kim