Abstract: Provided is a method of driving an intermittent system, which includes: generating a reference code and a transition code in which a power polling function is added to the reference code, and storing the reference code and the transition code in a memory; executing the reference code; storing storage information including an instruction address of the reference code that is in execution when a power interrupt is received, and calculating an instruction address of the transition code corresponding to the instruction address of the reference code; executing the transition code from the calculated instruction address of the transition code; and performing the power polling added to the transition code.

Abstract: A power semiconductor device, a power semiconductor module including the same, a power converter, and methods of manufacture are provided. The power semiconductor device can include a substrate, a first conductivity type epitaxial layer disposed on the substrate, and a stepped well structure, where the width of a lower region of the stepped well structure is narrower than an upper region, but wider than an insulating or trench region.

Abstract: Proposed are an apparatus and a method for simulating charge and discharge energy in an intermittent computing system. Specifically, an operation method for simulating power instability in intermittent computing includes receiving at least one selected from a group of energy storage and SBC standard information of an intermittent computing system, energy consumption information for an application program of the intermittent computing system, and illuminance information, and generating an intermittent computing charge and discharge energy scenario model on the basis of the received information, and performing intermittent computing energy simulation on the basis of the generated model, and identifying whether a result of the simulation is appropriate.

Abstract: A power semiconductor device includes a substrate, a first epi layer of first conductivity type on the substrate, a second epi layer of first conductivity type on the first epi layer, a first well of second conductivity type on the second epi layer, a first conductivity type source area on the second conductivity type first well, a gate insulating layer disposed on a bottom and sidewalls of a trench area from which a portion of first conductive type source area, the first well, and the second epi layer are removed, a trench gate disposed in the trench on the gate insulating layer, a second well of second conductivity type disposed on the second epi layer and spaced apart from the gate insulating layer and an ion implantation connection region of second conductivity type connecting the first well of second conductivity type and the second well of second conductivity type.

Abstract: A method of fabricating a carbon allotrope is disclosed. The method includes forming an intermediate carbon template from a carbon feedstock; and creating a pressure and temperature in the carbon template suitable for fabrication of the carbon allotrope from the intermediate carbon template. The pressure and temperature may be created from a shockwave resulting from collapse of a bubble formed during a bubble cavitation process.

Abstract: An apparatus includes a beta particle source configured to provide beta particles. The apparatus also includes a diamond moderator configured to convert at least some of the beta particles into lower-energy electrons. The apparatus further includes a PN junction configured to receive the electrons and to provide electrical power to a load. The diamond moderator is located between the beta particle source and the PN junction. The apparatus could also include an electron amplifier configured to bias the diamond moderator. For example, the electron amplifier could be configured to receive some of the beta particles and to generate additional electrons that bias the diamond moderator. Also, the diamond moderator can be configured to receive the beta particles having energies that are spread out over a wider range including higher energies, and the diamond moderator can be configured to provide the electrons concentrated in a narrower range at lower energies.

Abstract: A method of fabricating a carbon allotrope is disclosed. The method includes forming an intermediate carbon template from a carbon feedstock; and creating a pressure and temperature in the carbon template suitable for fabrication of the carbon allotrope from the intermediate carbon template. The pressure and temperature may be created from a shockwave resulting from collapse of a bubble formed during a bubble cavitation process.

Abstract: An apparatus includes a beta particle source configured to provide beta particles. The apparatus also includes a diamond moderator configured to convert at least some of the beta particles into lower-energy electrons. The apparatus further includes a PN junction configured to receive the electrons and to provide electrical power to a load. The diamond moderator is located between the beta particle source and the PN junction. The apparatus could also include an electron amplifier configured to bias the diamond moderator. For example, the electron amplifier could be configured to receive some of the beta particles and to generate additional electrons that bias the diamond moderator. Also, the diamond moderator can be configured to receive the beta particles having energies that are spread out over a wider range including higher energies, and the diamond moderator can be configured to provide the electrons concentrated in a narrower range at lower energies.

Abstract: A semiconductor structure is bonded directly to a diamond substrate by Van der Waal forces. The diamond substrate is formed by polishing a surface of diamond to a first degree of smoothness; forming a material, such as diamond, BeO, GaN, MgO, or SiO2 or other oxides, over the polished surface to provide an intermediate structure; and re-polishing the material formed on the intermediate structure to a second degree of smoothness smoother than the first degree of smoothness. The diamond is bonded to the semiconductor structure, such as GaN, by providing a structure having bottom surfaces of a semiconductor on an underlying material; forming grooves through the semiconductor and into the underlying material; separating semiconductor along the grooves into a plurality of separate semiconductor structures; removing the separated semiconductor structures from the underlying material; and contacting the bottom surface of at least one of the separated semiconductor structures to the diamond substrate.

Abstract: A semiconductor structure is bonded directly to a diamond substrate by Van der Waal forces. The diamond substrate is formed by polishing a surface of diamond to a first degree of smoothness; forming a material, such as diamond, BeO, GaN, MgO, or SiO2 or other oxides, over the polished surface to provide an intermediate structure; and re-polishing the material formed on the intermediate structure to a second degree of smoothness smoother than the first degree of smoothness. The diamond is bonded to the semiconductor structure, such as GaN, by providing a structure having bottom surfaces of a semiconductor on an underlying material; forming grooves through the semiconductor and into the underlying material; separating semiconductor along the grooves into a plurality of separate semiconductor structures; removing the separated semiconductor structures from the underlying material; and contacting the bottom surface of at least one of the separated semiconductor structures to the diamond substrate.

Abstract: A semiconductor structure is bonded directly to a diamond substrate by Van der Waal forces. The diamond substrate is formed by polishing a surface of diamond to a first degree of smoothness; forming a material, such as diamond, BeO, GaN, MgO, or SiO2 or other oxides, over the polished surface to provide an intermediate structure; and re-polishing the material formed on the intermediate structure to a second degree of smoothness smoother than the first degree of smoothness. The diamond is bonded to the semiconductor structure, such as GaN, by providing a structure having bottom surfaces of a semiconductor on an underlying material; forming grooves through the semiconductor and into the underlying material; separating semiconductor along the grooves into a plurality of separate semiconductor structures; removing the separated semiconductor structures from the underlying material; and contacting the bottom surface of at least one of the separated semiconductor structures to the diamond substrate.