Abstract: An angle measurement system using a magnet and provided with first and second tracks includes an absolute angle calculation unit configured to calculate an absolute angle of a position of the magnet by using a 1-1th digital signal obtained by measuring a magnetic field signal of the first track and converted into a digital signal, a 1-2th digital signal obtained by measuring the magnetic field signal of the first track and converted into a digital signal, a 2-1th digital signal obtained by measuring a magnetic field signal of the second track and converted into a digital signal, and a 2-2th digital signal obtained by measuring the magnetic field signal of the second track and converted into a digital signal.

Abstract: An angle measurement system using a magnet and provided with first and second tracks includes an absolute angle calculation unit configured to calculate an absolute angle of a position of the magnet by using a 1-1th digital signal obtained by measuring a magnetic field signal of the first track and converted into a digital signal, a 1-2th digital signal obtained by measuring the magnetic field signal of the first track and converted into a digital signal, a 2-1th digital signal obtained by measuring a magnetic field signal of the second track and converted into a digital signal, and a 2-2th digital signal obtained by measuring the magnetic field signal of the second track and converted into a digital signal.

Abstract: Disclosed herein is a photodiode cell, including: a first-type substrate; a second-type epitaxial layer disposed on the first-type substrate; heavily-doped second-type layers, each having a small depth, formed on the second-type epitaxial layer; and heavily-doped first-type layers, each having a narrow and shallow section, disposed on the second-type epitaxial layer and formed between the heavily-doped second-type layers, wherein the first-type and second-type have opposite doped states.

Abstract: Disclosed herein is a silicon photomultiplier tube, including: a first type silicon substrate; a cell, each including a first type epitaxial layer formed on the first type silicon substrate, a first type conductive layer formed on the first type epitaxial layer, and a second type conductive layer formed on the first type conductive layer; a separating element located between the cell and a cell adjacent to the cell to separate the cells from each other; and an antireflection coating layer formed on a top surface of the second type conductive layer and an inner wall of the separating element, wherein any one of the first type conductive layer and the second type conductive layer is formed in a plurality of rows.

Abstract: Disclosed is a silicon photoelectric multiplier having a cell structure, which includes a first type silicon substrate; a plurality of cells including a first type epitaxial layer formed on the substrate, a high concentration first type conductive layer formed on the epitaxial layer, and a high concentration second type conductive layer doped with a second type opposite the first type and formed on the high concentration first type conductive layer; a trench formed to optically separate the plurality of cells; and a guard ring formed on an outer wall of the trench so as to reach a bottom surface of the first type epitaxial layer, thus further increasing the degree of optical separation to thereby increase light detection efficiency.

Abstract: Disclosed herein is a photodiode cell, including: a first-type substrate; a second-type epitaxial layer disposed on the first-type substrate; heavily-doped second-type layers, each having a small depth, formed on the second-type epitaxial layer; and heavily-doped first-type layers, each having a narrow and shallow section, disposed on the second-type epitaxial layer and formed between the heavily-doped second-type layers, wherein the first-type and second-type have opposite doped states.

Abstract: Provided are a finger type photodiode and a method of manufacturing the same, which can reduce noise by forming a shallow doping layer. The finger type photodiode includes a bottom substrate supporting layers to be formed thereon, an epitaxial layer formed on the bottom substrate, a finger doping layer formed in a finger shape on a top surface of the epitaxial layer, and a shallow doping layer formed with a shallow depth on an externally exposed top surface of the epitaxial layer and a top surface of the finger doping layer. Since the dangling bond generated on the epitaxial layer and the finger doping layer is reduced, noise can be reduced, thereby improving the light efficiency and reliability of the photodiode.

Abstract: There is provided a digital-analog converter capable of easily extending the resolution that can easily extend the resolution by a simple circuit implementation when a 10-bit digital-analog converter is configured on the basis of an 8-bit digital-analog converter used in a display driving IC, and prevent an increase in area of the display driving IC.

Abstract: There is provided a digital-analog converter capable of easily extending the resolution that can easily extend the resolution by a simple circuit implementation when a 10-bit digital-analog converter is configured on the basis of an 8-bit digital-analog converter used in a display driving IC, and prevent an increase in area of the display driving IC.

Abstract: The present invention relates generally to a buffer of a drive Integrated Circuit (IC) and, more particularly, to a buffer of a drive IC for driving a spatial light modulator that can meet a desired dynamic slew rate characteristic by controlling current that affects a slew rate.

Abstract: An RF modulator includes a C/L delay compensation function of compensating for a delay of a luminance signal with respect to a chrominance signal occurring during demodulating a video signal in a TV set. The RF modulator includes a C/L delay compensation unit delaying a luminance signal by 170 nsec and combining the delayed luminance signal with a chrominance signal to output a composite image signal having a C/l delay of ?170 nsec and a frequency modulation unit modulating the video signal received from the C/L delay compensation unit into a high frequency signal of a predetermined broadcasting channel in a single module or package. The RF modulator outputs a video signal having the luminance signal delayed by 170 nsec with respect to the chrominance signal and complies with a C/L delay standard without adding any additional C/L delay compensation unit to the RF modulator.

Abstract: The present invention relates generally to a buffer of a drive Integrated Circuit (IC) and, more particularly, to a buffer of a drive IC for driving a spatial light modulator that can meet a desired dynamic slew rate characteristic by controlling current that affects a slew rate.

Abstract: An RF modulator includes a C/L delay compensation function of compensating for a delay of a luminance signal with respect to a chrominance signal occurring during demodulating a video signal in a TV set. The RF modulator includes a C/L delay compensation unit delaying a luminance signal by 170nsec and combining the delayed luminance signal with a chrominance signal to output a composite image signal having a C/l delay of −170nsec and a frequency modulation unit modulating the video signal received from the C/L delay compensation unit into a high frequency signal of a predetermined broadcasting channel in a single module or package. The RF modulator outputs a video signal having the luminance signal delayed by 170nsec with respect to the chrominance signal and complies with a C/L delay standard without adding any additional C/L delay compensation unit to the RF modulator.