Abstract: Exemplary embodiments of the present invention disclose a wafer carrier with a pocket. The wafer carrier is used for supporting a GaN substrate in a chemical vapor deposition apparatus. The wafer carrier includes a carrier lower surface, a carrier upper surface, and a pocket surrounded by the carrier upper surface. The pocket includes a bottom surface, and a rim arranged along an edge of the bottom surface and located under the carrier upper surface. The rim includes a sidewall extending from the bottom surface, and an upper surface on which the GaN substrate is arranged. A height difference between an edge and a center of the bottom surface is 5 ?m or less. Since the bottom surface is formed in a relatively flat shape, epitaxial layers may be uniformly grown on the GaN substrate.

Abstract: A method of fabricating a nonpolar gallium nitride-based semiconductor layer is provided. The method is a method of fabricating a nonpolar gallium nitride layer using metal organic chemical vapor deposition, and includes disposing a gallium nitride substrate with an m-plane growth surface within a chamber, raising a substrate temperature to a GaN growth temperature by heating the substrate, and growing a gallium nitride layer on the gallium nitride substrate by supplying a Ga source gas, an N source gas, and an ambient gas into the chamber at the growth temperature. The supplied ambient gas contains N2 and does not contain H2.