Abstract: A display device includes a sensor layer including an active area and a non-active area at least partially surrounding the active area. A first sensor electrode is disposed in the active area of the sensor layer. A first wire is disposed in the non-active area of the sensor layer. The first wire includes a first wiring portion electrically connected to the first sensor electrode, having at least a part thereof extending in a first direction, and including at least two wiring layers, and a second wiring portion electrically connected to the first wiring portion, extending in a second direction crossing the first direction, and including a single wiring layer.

Abstract: A semiconductor device may include first and second fin-shaped patterns on a substrate, that extend in a first direction, and are spaced apart from each other in a second direction. A first epitaxial pattern may be on the first fin-shaped pattern, and a second epitaxial pattern may be on the second fin-shaped pattern. A field insulating layer may be on the substrate, and may cover a sidewall of the first fin-shaped pattern, a sidewall of the second fin-shaped pattern, a part of a sidewall of the first epitaxial pattern, and a part of a sidewall of the second epitaxial pattern. The top surface of the field insulating layer may be higher than the bottom surface of the first epitaxial pattern and the bottom surface of the second epitaxial pattern.

Abstract: A light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The active layer has a single structure of a multi-quantum well in which a plurality of barrier layers and a plurality of well layers are stacked, and the active layer emits white light.

Abstract: Embodiments of the present disclosure relate to a quantum device including moderate fluorinated graphene and a method for fabricating the same. According to an exemplary embodiment of the present disclosure, there is provided a quantum device including moderate fluorinated graphene, the quantum device including a substrate, a first insulating layer located on the substrate, a graphene layer located on the first insulating layer, and a second insulating layer located on the graphene layer and covering a third region excluding a first region and second region on both sides of the graphene layer, in which the first region and second region of the graphene layer are formed of moderate fluorinated graphene, and a metal layer is formed on the first region and the second region, and the metal layer makes contact at some locations on the moderate fluorinated graphene.

Abstract: A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The active layer emits light having at least two peak wavelengths at a single chip level.

Abstract: A light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The active layer has a single structure of a multi-quantum well in which a plurality of barrier layers and a plurality of well layers are stacked, and the active layer emits white light.

Abstract: Semiconductor devices and methods of forming the same are provided. The semiconductor devices may include a first fin-type pattern and a second fin-type pattern on a substrate, a first epitaxial pattern on the first fin-type pattern, a second epitaxial pattern on the second fin-type pattern, and a lower field insulating film on the substrate and extends on a sidewall of the first fin-type pattern and a sidewall of the second fin-type pattern, wherein the lower field insulating film includes a protrusion protruding in a third direction. The protrusion of the lower field insulating film may be between the first fin-type pattern and the second fin-type pattern, and a vertical level of a top surface of the protrusion of the lower field insulating film increases and then decreases with increasing distance from the sidewall of the first fin-type pattern.

Abstract: Provided are a method and device for controlling a wind speed parameter of a wind-based power generation facility which include a memory; and a processor connected to the memory, wherein the processor is configured to: receive a first wind speed corresponding to an average wind speed per a preset time interval from a first real-world wind-based power generation facility installed in a real world, and receive therefrom a first power generation amount as generated per the preset time interval; generate a first dataset representing a power generation amount based on a change in a wind speed, based on the first wind speed and the first power generation amount; calculate a first power coefficient related to the first power generation amount based on each first wind speed, based on the first data set.

Abstract: An embodiment of the present disclosure discloses a method of process variation compensating through activation value adjustment of an analog binarized neural network circuit that may recover a decrease in recognition rate performance up to an almost perfect level, even if a binarized neural network is implemented as an analog circuit such that recognition rate performance is decreased due to process variation.

Abstract: The present invention relates to a recombinant vector for transcription of the Newcastle disease virus (NDV) genome, a strain of attenuated recombinant NDV with a surface antigen of pathogenic NDV prepared by the vector, a method of preparing a recombinant NDV having low pathogenicity and high protectivity efficiency against Newcastle disease (ND) using the vector, and a vaccine against ND containing the recombinant NDV.

Abstract: The present invention relates to an epitope of HN protein in Newcastle disease virus which can be recognized by an avian immune system and an antibody against the epitope, a method for detecting a Newcastle disease virus by using the antibody, and an antigenic variant of Newcastle disease virus carrying changes in the epitope. The epitope of HN protein and the antigenic variant of Newcastle disease virus can be used for developing efficient vaccines, and further, in diagnosing the Newcastle disease virus rapidly and exactly.

Abstract: The present invention relates to a recombinant vector for transcription of the Newcastle disease virus (NDV) genome, a strain of attenuated recombinant NDV with a surface antigen of pathogenic NDV prepared by the vector, a method of preparing a recombinant NDV having low pathogenicity and high protectivity efficiency against Newcastle disease (ND) using the vector, and a vaccine against ND containing the recombinant NDV.

Abstract: The present invention relates to an epitope of HN protein in Newcastle disease virus which can be recognized by an avian immune system and an antibody against the epitope, a method for detecting a Newcastle disease virus by using the antibody, and an antigenic variant of Newcastle disease virus carrying changes in the epitope. The epitope of HN protein and the antigenic variant of Newcastle disease virus can be used for developing efficient vaccines, and further, in diagnosing the Newcastle disease virus rapidly and exactly.