Abstract: The present exemplary embodiments may provide a latent curing agent including an imidazole-based compound protected by a Diels-Alder reaction between a diene and a dienophile.

Abstract: The present disclosure relates to a spiropyran composite having improved mechano-sensitivity, a method for manufacturing the same, and a chromic article including the same. Particularly, the spiropyran composite is obtained by bonding spiropyran covalently to a polymer, an inorganic material or a mixture thereof to form spiropyran composite, and impregnating the spiropyran composite with a sensitivity-enhancing agent for a suitable time through a wet infiltration process to form non-polar environment at the inner part of the spiropyran composite, to cause pre-stretch and to increase a change in color or fluorescence in response to force, stress or strain, thereby providing significantly improved mechano-sensitivity. In addition, a wet filtration process is used and no expensive equipment is required to simplify the process. Further, the process can be performed rapidly within several minutes to reduce the processing time.

Abstract: Provided is a display device, which includes: a reference voltage line formed along a circular outer line and configured to provide a reference voltage; a first reference voltage auxiliary line electrically connected to the reference voltage line and formed to be parallel with a predetermined interval; and a conductive line forming a contact with the reference voltage line and the first reference voltage auxiliary line and configured to provide the reference voltage to a cathode.

Abstract: An image sensing device is provided to include a pixel array having a plurality of pixels arranged in a matrix shape. Each of the pixels includes: a control node configured to generate a hole current in a substrate; a detection node configured to capture photocharge migrated by the hole current, formed in a shape whose at least part is partially open, and disposed to surround the control node, and a low resistance region including a dielectric layer formed in the substrate, and disposed in the opening on of the detection node. The low resistance region includes an inner low resistance region disposed between the control node and the center of the pixel.

Abstract: Provided is a substrate supporting apparatus including: a mounting part provided with a first body brought into contact with a substrate so that the substrate is mounted thereon and a second body configured to surround the first body; and a support part connected under the mounting part so as to support the mounting part, wherein the first body and the second body include a plurality of protrusions, and an area of upper surfaces of the protrusions provided on the first body is formed larger than an area of upper surfaces of the protrusions provided on the second body, and thus, the substrate can be stably supported.

Abstract: A leakage current control device of a semiconductor memory device is provided to effectively remove leakage current flowing from a bit line to a word line when a process defect is generated by gate residues of the semiconductor memory device, thereby reducing unnecessary current consumption. In the leakage current control device, the bit line boosted to a voltage level of core voltage/2 is controlled at a ground voltage level during a precharge period to remove unnecessary leakage current flowing from the bit line to a word line bridge.

Abstract: Provided is directed to a semiconductor memory device including a control path for enabling a sense generator signal for delaying time as long as a bitline sense amplifier operates in response to a row active signal and enabling a precharge signal according to the sense generator signal, wherein the control path includes: a first time control unit for varying an enabling time of the sense generator signal by eacn time, according to a special test mode signal for testing the semiconductor memory device and a specific column address; and a second time control unit for varying an enabling time of the precharge signal by each step, according to a special test mode signal for testing the semiconductor memory device and a specific column address.