Abstract: Disclosed are substrate polishing apparatuses, substrate polishing systems, and/or substrate polishing methods. The substrate polishing apparatus may include an electric field applying module, and a platen that rotates a polishing pad. The electric field applying module may include an inner electrode having a circular shape when viewed in plan. The platen may be on the inner electrode. A central axis of the inner electrode may be spaced apart from a central axis of the platen. The inner electrode may include a first electrode and a second electrode that may surround the first electrode and may have an annular shape.

Abstract: A cleaning apparatus includes a gas supply line and a cleaning liquid supply line. A nozzle is connected to the gas and the cleaning liquid supply lines. The nozzle applies the cleaning liquid to a substrate. A gas entrance port at a top of a body of the nozzle is connected to the gas supply line. A first cleaning liquid entrance port is disposed on a sidewall of the nozzle body and is connected to the cleaning liquid supply line. A fluid injection port is disposed at a bottom of the nozzle body and discharges both the gas and the cleaning liquid. An internal passage of the nozzle body connects each of the gas entrance port and the first cleaning liquid entrance port to the fluid injection port. The fluid injection port has a diameter that is greater than a diameter of the first cleaning liquid entrance port.

Abstract: A cleaning method includes supplying, to a substrate by a dual nozzle, a first chemical liquid and a first spray, the first spray including a first liquid dissolving the first chemical liquid, and moving the dual nozzle in a first direction. The the dual nozzle comprises a first nozzle and a second nozzle, the first nozzle supplies the first spray to the substrate and the second nozzle supplies the first chemical liquid to the substrate while the dual nozzle moves in the first direction, the first nozzle proceeds ahead of the second nozzle in the first direction while the dual nozzle moves in the first direction, and the first nozzle has a distance 3 cm to 7 cm from the second nozzle.

Abstract: A cleaning apparatus includes a gas supply line and a cleaning liquid supply line. A nozzle is connected to the gas and the cleaning liquid supply lines. The nozzle applies the cleaning liquid to a substrate. A gas entrance port at a top of a body of the nozzle is connected to the gas supply line. A first cleaning liquid entrance port is disposed on a sidewall of the nozzle body and is connected to the cleaning liquid supply line. A fluid injection port is disposed at a bottom of the nozzle body and discharges both the gas and the cleaning liquid. An internal passage of the nozzle body connects each of the gas entrance port and the first cleaning liquid entrance port to the fluid injection port. The fluid injection port has a diameter that is greater than a diameter of the first cleaning liquid entrance port.

Abstract: A cleaning apparatus for removing particles from a substrate is provided. The cleaning apparatus includes a first cleaning unit including a first dual nozzle supplying, to a substrate, a first chemical liquid and a first spray including a first liquid dissolving the first chemical liquid, and a second cleaning unit including a second dual nozzle supplying, to the substrate, a second chemical liquid different from the first chemical liquid and a second spray including a second liquid dissolving the second chemical liquid and being the same as the first liquid.

Abstract: A cleaning apparatus for removing particles from a substrate is provided. The cleaning apparatus includes a first cleaning unit including a first dual nozzle supplying, to a substrate, a first chemical liquid and a first spray including a first liquid dissolving the first chemical liquid, and a second cleaning unit including a second dual nozzle supplying, to the substrate, a second chemical liquid different from the first chemical liquid and a second spray including a second liquid dissolving the second chemical liquid and being the same as the first liquid.

Abstract: A cleaning apparatus for removing particles from a substrate is provided. The cleaning apparatus includes a first cleaning unit including a first dual nozzle supplying, to a substrate, a first chemical liquid and a first spray including a first liquid dissolving the first chemical liquid, and a second cleaning unit including a second dual nozzle supplying, to the substrate, a second chemical liquid different from the first chemical liquid and a second spray including a second liquid dissolving the second chemical liquid and being the same as the first liquid.

Abstract: Aspects of the inventive concepts provide a cleaning apparatus and a substrate processing system including the same. The cleaning apparatus includes a chuck receiving a substrate, a first nozzle providing first cleaning water or a first organic solvent onto the substrate at a first pressure, and a second nozzle disposed adjacent to the first nozzle. The second nozzle provides a cleaning solution including second cleaning water and a second organic solvent onto the substrate at a second pressure lower than the first pressure.

Abstract: In a method of manufacturing an MRAM device, a first sacrificial layer, an etch stop layer, and a second sacrificial layer are sequentially formed on a substrate and then partially etched to form openings therethrough. Lower electrodes are formed to fill the openings. The first and second sacrificial layers and portions of the etch stop layer are removed to form etch stop layer patterns surrounding upper portions of sidewalls of the lower electrodes, respectively. An upper insulating layer pattern is formed between the etch stop layer patterns to partially define an air pad between the lower electrodes. A first magnetic layer, a tunnel barrier layer, a second magnetic layer, and an upper electrode layer are formed, and are etched to form a plurality of magnetic tunnel junction (MTJ) structures.

Abstract: In a method of manufacturing an MRAM device, a first sacrificial layer, an etch stop layer, and a second sacrificial layer are sequentially formed on a substrate and then partially etched to form openings therethrough. Lower electrodes are formed to fill the openings. The first and second sacrificial layers and portions of the etch stop layer are removed to form etch stop layer patterns surrounding upper portions of sidewalls of the lower electrodes, respectively. An upper insulating layer pattern is formed between the etch stop layer patterns to partially define an air pad between the lower electrodes. A first magnetic layer, a tunnel barrier layer, a second magnetic layer, and an upper electrode layer are formed, and are etched to form a plurality of magnetic tunnel junction (MTJ) structures.

Abstract: Methods of fabricating a semiconductor device are provided. The methods may include preparing a semiconductor substrate, forming insulating patterns including a trench on the semiconductor substrate, conformally forming a metal layer covering an inner surface of the trench on the insulating patterns, conformally forming a protecting layer on the metal layer, and performing a chemical mechanical polishing (CMP) process on the protecting layer and the metal layer until top surfaces of the insulating patterns are exposed, thereby forming a metal pattern and a protecting pattern in the trench. The CMP process may use a slurry including polishing particles having negative charges.

Abstract: Provided is a method for manufacturing a MOS transistor.

Abstract: Provided is a method for manufacturing a MOS transistor.