Abstract: A manufacturing method for a solid oxide fuel cell (SOFC) unit cell is disclosed. The manufacturing method may include manufacturing an Ni—CeScSZ anode layer; manufacturing a CeScSZ electrolyte layer; manufacturing a gadolinia-doped ceria (GDC) buffer layer; and manufacturing a lanthanum strontium cobalt ferrite (LSCF) cathode layer. Accordingly, an ohmic resistance of electrolyte and a polarization resistance may be reduced and high output may be obtained even at a middle low temperature.

Abstract: A method for fabricating a solar cell using inductively coupled plasma chemical vapor deposition (ICP-CVD) including a first electrode, a P layer, an intrinsic layer, an N-type layer and a second electrode. The method includes forming an intrinsic layer including a hydrogenated amorphous silicon (Si) thin film by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H2) gas and silane (SiH4) gas. In the mixed gas, silane gas is in a ratio of 8 to 10 relative to mixed gas.

Abstract: In one example, a method for fabricating a solar cell comprising a first electrode, a first-type layer, an intrinsic layer, a second-type layer and a second electrode is disclosed. At least one of the second-type layer, the intrinsic layer and the first-type layer is formed as a crystallized Si layer by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H2) gas and silane (SiH4) gas, the mixed gas having a silane gas (SiH4) in a ratio of 0.016 to 0.02.

Abstract: In one example, a method for fabricating a solar cell comprising a first electrode, a first-type layer, an intrinsic layer, a second-type layer and a second electrode is disclosed. The method comprising forming a second-type layer including an amorphous silicon (Si) carbide thin film by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H2) gas, silane (SiH4) gas, diborane (B2H6) and ethylene (C2H4) gas, wherein the ethylene (C2H4) gas includes 60% hydrogen gas diluted ethylene gas, the diborane gas is 97% hydrogen gas diluted diborane gas, the mixed gas includes 1 to 1.2% ethylene gas and 6 to 6.5% diborane gas.

Abstract: In one example, a method for fabricating a solar cell comprising a first electrode, a first-type layer, an intrinsic layer, a second-type layer and a second electrode is disclosed. At least one of the second-type layer, the intrinsic layer and the first-type layer is formed as a crystallized Si layer by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H2) gas and silane (SiH4) gas, the mixed gas having a silane gas (SiH4) in a ratio of 0.016 to 0.02.

Abstract: In one example, a method for fabricating a solar cell comprising a first electrode, a first-type layer, an intrinsic layer, a second-type layer and a second electrode is disclosed. The method comprising forming a second-type layer including an amorphous silicon (Si) carbide thin film by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H2) gas, silane (SiH4) gas, diborane (B2H6) and ethylene (C2H4) gas, wherein the ethylene (C2H4) gas includes 60% hydrogen gas diluted ethylene gas, the diborane gas is 97% hydrogen gas diluted diborane gas, the mixed gas includes 1 to 1.2% ethylene gas and 6 to 6.5% diborane gas.

Abstract: A method for fabricating a solar cell using inductively coupled plasma chemical vapor deposition (ICP-CVD) including a first electrode, a P layer, an intrinsic layer, an N-type layer and a second electrode. The method includes forming an intrinsic layer including a hydrogenated amorphous silicon (Si) thin film by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H2) gas and silane (SiH4) gas. In the mixed gas, silane gas is in a ratio of 8 to 10 relative to mixed gas.

Abstract: A method for fabricating a silicon nano wire, a solar cell including the silicon nano wire and a method for fabricating the solar cell. The solar cell includes a substrate, a first++-type poly-Si layer formed on the substrate, a first-type silicon nano wire layer including a first-type silicon nano wire grown from the first++-type poly-Si layer, an intrinsic layer formed on the substrate having the first-type silicon nano wire layer, and a second-type doping layer formed on the intrinsic layer.