Abstract: An integrated circuit device includes a pair of fin-type active regions, which extend in a first horizontal direction on a substrate, and a fin isolation insulator between ones of the pair of fin-type active regions to extend in a second horizontal direction that intersects with the first horizontal direction. The fin isolation insulator includes a first nitrogen-rich barrier film having at least one protrusion at a position that is higher than respective top surfaces of each of the pair of fin-type active regions with respect to the substrate, and a second nitrogen-rich barrier film, which is spaced apart from the first nitrogen-rich barrier film and is in a space defined by the first nitrogen-rich barrier film.

Abstract: An X-ray image processing method, including obtaining a first X-ray image of an object including a plurality of materials including a first material and a second material; obtaining a first partial image generated by imaging the first material and a second partial image generated by imaging the first material overlapping the second material from the first X-ray image; obtaining first information related to a stereoscopic structure of the first material, based on the first partial image included in the first X-ray image; and obtaining second information about the second material based on the first information and the second partial image.

Abstract: An X-ray image processing method, including obtaining a first X-ray image of an object including a plurality of materials including a first material and a second material; obtaining a first partial image generated by imaging the first material and a second partial image generated by imaging the first material overlapping the second material from the first X-ray image; obtaining first information related to a stereoscopic structure of the first material, based on the first partial image included in the first X-ray image; and obtaining second information about the second material based on the first information and the second partial image.