Patents by Inventor Chagn-Ki Hong

Chagn-Ki Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resistive Random Access Memory Devices Including Sidewall Resistive Layers and Related Methods
    Publication number: 20080247219
    Abstract: A resistive random access memory (RRAM) device may include a first metal pattern on a substrate, a first insulating layer on the first metal pattern and on the substrate, an electrode, a second insulating layer on the first insulating layer, a resistive memory layer, and a second metal pattern. Portions of the first metal pattern may be between the substrate and the first insulating layer, and the first insulating layer may have a first opening therein exposing a portion of the first metal pattern. The electrode may be in the opening with the electrode being electrically coupled with the exposed portion of the first metal pattern. The first insulating layer may be between the second insulating layer and the substrate, and the second insulating layer may have a second opening therein exposing a portion of the electrode.
    Type: Application
    Filed: April 3, 2008
    Publication date: October 9, 2008
    Inventors: Suk-Hun Choi, In-Gyu Baek, Seong-Kyu Yun, Jong-Heun Lim, Chagn-Ki Hong, Bo-Un Yoon