Patents by Inventor Chai Zheng

Chai Zheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Quaternary ammonium hydroxides of polyamines
    Patent number: 12077730
    Abstract: The present disclosure provides a quaternary ammonium hydroxide solution comprising a reaction product of a polyamine and an organic oxirane. The quaternary ammonium hydroxide solution may be used in various applications, such as in removing chemical residue from a metal or dielectric surface.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: September 3, 2024
    Assignee: HUNTSMAN PETROCHEMICAL LLC
    Inventors: Donald H. Champion, David C. Lewis, Juventino Uriarte, Hui Zhou, Ke Zhang, Chai Zheng
  • QUARTERNARY AMMONIUM HYDROXIDES OF POLYAMINES
    Publication number: 20210179972
    Abstract: The present disclosure provides a quaternary ammonium hydroxide solution comprising a reaction product of a polyamine and an organic oxirane. The quaternary ammonium hydroxide solution may be used in various applications, such as in removing chemical residue from a metal or dielectric surface.
    Type: Application
    Filed: July 29, 2019
    Publication date: June 17, 2021
    Inventors: Donald H. Champion, David C. Lewis, Juventino Uriarte, Hui Zhou, Ke Zhang, Chai Zheng
  • HIGH PEAK POWER QUANTUM CASCADE SUPERLUMINESCENT EMITTER
    Publication number: 20160181470
    Abstract: A high power quantum cascade superluminescent emitter employs low reflectivity facets including a tilted cleaved facet, a rounded shaped wet-etched sloped facet and a loop facet in either a linear or spiral configuration to increase ASE.
    Type: Application
    Filed: December 18, 2015
    Publication date: June 23, 2016
    Inventors: Claire GMACHL, Nyan LYnn AUNG, Mei Chai ZHENG
  • Single-mode quantum cascade lasers with enhanced tuning range
    Patent number: 9088126
    Abstract: In one aspect, semiconductor lasers are provided. A semiconductor laser described herein comprises substrate and a cavity formed on the substrate, the cavity comprising an asymmetric Mach-Zehnder (AMZ) interferometer structure positioned between two straight waveguide segments, the straight waveguide segments and first and second arms of the AMZ interferometer structure comprising epitaxial semiconductor layers, wherein the second arm of the AMZ interferometer structure has a temperature control architecture independent of the first arm.
    Type: Grant
    Filed: October 17, 2013
    Date of Patent: July 21, 2015
    Assignee: THE TRUSTEES OF PRINCETON UNIVERSITY
    Inventors: Mei Chai Zheng, Qiang Liu, Claire F. Gmachl
  • SINGLE-MODE QUANTUM CASCADE LASERS WITH ENHANCED TUNING RANGE
    Publication number: 20150110137
    Abstract: In one aspect, semiconductor lasers are provided. A semiconductor laser described herein comprises substrate and a cavity formed on the substrate, the cavity comprising an asymmetric Mach-Zehnder (AMZ) interferometer structure positioned between two straight waveguide segments, the straight waveguide segments and first and second arms of the AMZ interferometer structure comprising epitaxial semiconductor layers, wherein the second arm of the AMZ interferometer structure has a temperature control architecture independent of the first arm.
    Type: Application
    Filed: October 17, 2013
    Publication date: April 23, 2015
    Applicant: Princeton University
    Inventors: Mei Chai Zheng, Qiang Liu, Claire F. Gmachl