Abstract: A system, method and computer readable medium for reticle evaluation, the method includes: (i) obtaining, during an imaging process, multiple images of the reticle under different polarization and optionally interferometric conditions; and (ii) generating an output aerial image in response to (i) the multiple images and (ii) differences between the imaging process and an exposure process; wherein during the exposure process an image of the reticle is projected onto a wafer.

Abstract: A system that includes: (a) a mask manipulator, that is arranged to: receive an opaque EUV pod that encloses an EUV mask, extract, in a highly clean environment, the EUV mask from the outer pod and the inner pod of the EUV pod, and cover an upper face of the EUV mask with protective cover that is at least partially transparent to DUV radiation; (b) a scanner, arranged to scan the EUV mask, using DUV illumination while maintaining in the scanner an environment that has a cleanliness level that is below a tolerable EUV mask cleanliness level; and (c) a transport system arranged to transport the EUV mask and the protective cover between the scanner and the mask manipulator.

Abstract: A method, system and a computer program product for evaluating an evaluated pattern of a mask, the method includes: receiving multiple moments that represent an image of the evaluated pattern; wherein a size of information required for representing the multiple moments is substantially smaller than a size of pixel information that form the image of the evaluated pattern; and processing the multiple moments in order to determine at least one shape parameter of the evaluated pattern.

Abstract: A system that includes: (a) a mask manipulator, that is arranged to: receive an opaque EUV pod that encloses a EUV mask, extract, in a highly clean environment, the EUV mask from the outer pod and the inner pod of the EUV pod, and cover an upper face of the EUV mask with protective cover that is at least partially transparent to DUV radiation; (b) a scanner, arranged scan the EUV mask, using DUV illumination while maintaining in the scanner an environment that has a cleanliness level that is below a tolerable EUV mask cleanliness level; and a transport system arranged to transport the EUV mask and the protective cover between the scanner and the mask manipulator.

Abstract: A method, system and a computer program product for evaluating an evaluated pattern of a mask, the method includes: receiving multiple moments that represent an image of the evaluated pattern; wherein a size of information required for representing the multiple moments is substantially smaller than a size of pixel information that form the image of the evaluated pattern; and processing the multiple moments in order to determine at least one shape parameter of the evaluated pattern.

Abstract: A method for qualifying printability of a mask, including performing a first inspection of the mask with an optical assembly at a first numerical aperture of collection (NAC) of radiation from the mask, and determining, in response to the first inspection, a first possible defect in the mask and a first location of the first possible defect. The method also includes performing a second inspection of the mask with the optical assembly at a second NAC of radiation from the mask, different from the first NAC, and determining, in response thereto, a second possible defect in the mask and a second location of the second possible defect. The method further includes performing a comparison of the first and second locations, and in response to the comparison, determining that the first and second possible defects represent a real defect if the first location matches the second location.

Abstract: A method for qualifying printability of a mask, including performing a first inspection of the mask with an optical assembly at a first numerical aperture of collection (NAC) of radiation from the mask, and determining, in response to the first inspection, a first possible defect in the mask and a first location of the first possible defect. The method also includes performing a second inspection of the mask with the optical assembly at a second NAC of radiation from the mask, different from the first NAC, and determining, in response thereto, a second possible defect in the mask and a second location of the second possible defect. The method further includes performing a comparison of the first and second locations, and in response to the comparison, determining that the first and second possible defects represent a real defect if the first location matches the second location.