Abstract: A planar transferred electron device is biased such that the voltage across the anode and cathode electrodes is above that of a threshold voltage in the presence of which the device is characterized by a transfer of electrons from a high to a low mobility sub-band and the formation of domains. A reverse biasing potential is applied between the gate and cathode electrodes which is of sufficient magnitude to cause in the quiescent state the suppression of the formation of these domains. When signals above a given level are provided between the gate and cathode electrodes, the device operates according to a transferred electron effect including the formation of the domains.

Abstract: A large voltage swing across a typical planar transferred electron logic device is achieved by a nonlinear load resistor in series with the transferred electron device. The nonlinear load resistor includes a body of transferred electron effect material with an adjacent layer of high dielectric material. The layer is of sufficiently high dielectric material so that the load resistor so formed saturates at a current standoff point provided by the bias source of the logic device.