Patents by Inventor Chak Wah TANG

Chak Wah TANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metamorphic growth of III-V semiconductor on silicon substrate by MOCVD for high speed III-V transistors
    Patent number: 9123741
    Abstract: A III-V semiconductor device on a silicon substrate is constructed with a silicon (Si) substrate onto which gallium arsenide (GaAs) indium phosphide (InP) and aluminum indium arsenide (AlInAs) to form a structure of AlInAs over InP over GaAs over Si. The GaAs is applied in at least one layer over the Si, followed by at least one layer of InP and at least one layer of AlInAs. A portion of the structure is doped and a cap or passivation layer is applied.
    Type: Grant
    Filed: January 29, 2013
    Date of Patent: September 1, 2015
    Assignee: NANO AND ADVANCED MATERIALS INSTITUTE LIMITED
    Inventors: Kei May Lau, Chak Wah Tang
  • Metamorphic Growth Of III-V Semiconductor On Silicon Substrate By MOCVD for High Speed III-V Transistors
    Publication number: 20140209979
    Abstract: A III-V semiconductor device on a silicon substrate is constructed with a silicon (Si) substrate onto which gallium arsenide (GaAs) indium phosphide (InP) and aluminum indium arsenide (AlInAs) to form a structure of AlInAs over InP over GaAs over Si. The GaAs is applied in at least one layer over the Si, followed by at least one layer of InP and at least one layer of AlInAs. A portion of the structure is doped and a cap or passivation layer is applied.
    Type: Application
    Filed: January 29, 2013
    Publication date: July 31, 2014
    Applicant: NANO AND ADVANCED MATERIALS INSTITUTE LIMITED
    Inventors: Kei May LAU, Chak Wah TANG