Abstract: A plasma display panel includes first and second substrates facing each other and spaced apart from each other, barrier ribs arranged between the first and second substrates to define discharge cells, phosphor layers in the discharge cells, address electrodes extending on the first substrate along a first direction to correspond to the discharge cells, first and second electrodes extending on the second substrate along a second direction to correspond to the discharge cells, the second direction crossing the first direction, a dielectric layer on the first and second electrodes, and a doped protective layer on the dielectric layer, the protective layer including at least one groove.

Abstract: Provided is a Nd-based two-phase separation amorphous alloy by adding an element having a big difference in heat of mixing in a Nd-based alloy with a superior amorphous formability through an inherent characteristic of compositional elements and consideration of thermodynamics, at the time of forming amorphous phase, to thereby enable two-phase separation amorphous alloy during solidification.

Abstract: The semiconductor device having an air gap includes an insulation layer formed on a semiconductor substrate and having a metal line forming region. A metal line is formed to fill the metal line forming region of the insulation layer. An air gap is formed between the insulation layer and the metal line.

Abstract: A process for manufacturing a semiconductor device using a spacer as an etch mask for forming a fine pattern is described. The process includes forming a hard mask layer over a target layer that is desired to be etched. A sacrificial layer pattern is subsequently formed over the hard mask layer. Spacers are formed on the sidewalls of the sacrificial layer pattern. The protective layer is formed on the hard mask layer portions between the sacrificial patterns formed with the spacer. The sacrificial layer pattern and the protective layer are then later removed, respectively. The hard mask layer is etched using the spacer as an etching mask. After etching, the spacer is removed. Finally, the target layer is etched using the etched hard mask as an etching mask.

Abstract: A semiconductor device is manufactured by forming a low dielectric constant layer on a semiconductor substrate which is formed with metal lines; implementing primary ultraviolet treatment of the low dielectric constant layer; forming a capping layer on the low dielectric constant layer having undergone the primary ultraviolet treatment; and implementing secondary ultraviolet treatment of the low dielectric constant layer including the capping layer.

Abstract: In manufacturing a semiconductor device, a metal film is formed on a semiconductor substrate, and a high-temperature amorphous carbon film pattern for defining a wiring forming area is formed on the metal film. The metal film is etched by using the high-temperature amorphous carbon film pattern as an etching barrier to form a metal wiring. A low-temperature amorphous carbon film as an IMD is formed on the resultant structure so as to cover the metal wiring including the high-temperature amorphous carbon film pattern. The low-temperature amorphous carbon film and the high-temperature amorphous carbon film pattern are etched to form a contact hole, which has greater width in an upper portion than in a lower portion thereof. Finally, a plug metal film is formed on the low-temperature amorphous carbon film to fill the contact hole.

Abstract: Disclosed are a motor and a drum washing machine having the same. The motor includes external stators and internal stators, which are respectively disposed in a ring shape and are separated from each other in a radial direction, and rotors, which are disposed in a ring shape and are rotatably installed between the external stators and the internal stators such that the rotors are rotated due to interaction with the external stators and the internal stators, thus being capable of generating a high rotary force while maintaining a uniform length in an axial direction.

Abstract: A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer.

Abstract: Disclosed is a jet vane thrust vector control (JV-TVC) system. A general system has many problems in design techniques considering actual operation environments, and does not have reliability in component assembly design. The JV-TVC system improves thrust vector control and high angle of attack maneuvering performance of a missile by allowing rotational angles of jet vanes to maximum ±30°, precisely controls the thrust vector of the missile by preventing damages of components for the designated flight time of the missile, and improves precision and reliability in the assembly process by modularization.

Abstract: Provided is a Nd-based two-phase separation amorphous alloy by adding an element having a big difference in heat of mixing in a Nd-based alloy with a superior amorphous formability through an inherent characteristic of compositional elements and consideration of thermodynamics, at the time of forming amorphous phase, to thereby enable two-phase separation amorphous alloy during solidification.

Abstract: Disclosed is a jet vane thrust vector control (JV-TVC) system. A general system has many problems in design techniques considering actual operation environments, and does not have reliability in component assembly design. The JV-TVC system improves thrust vector control and high angle of attack maneuvering performance of a missile by allowing rotational angles of jet vanes to maximum ±30°, precisely controls the thrust vector of the missile by preventing damages of components for the designated flight time of the missile, and improves precision and reliability in the assembly process by modularization.

Abstract: A method for forming the storage node of a capacitor which simplifies its process, and improves the electrical characteristics of semiconductor products by forming the storage node of a capacitor with no stepped portion between cell regions and peripheral circuit regions necessary for memory storage of semiconductor products of the next generation to which a fine line width is applied, and, at the same time, forming a guard ring for dividing the cell regions and the peripheral circuit regions.

Abstract: The present invention relates to peptides that are more potent than or equally potent as the conventional antimicrobial peptides and has strong antimicrobial activities at high salt concentration.

Abstract: A method for forming the storage node of a capacitor which simplifies its process, and improves the electrical characteristics of semiconductor products by forming the storage node of a capacitor with no stepped portion between cell regions and peripheral circuit regions necessary for memory storage of semiconductor products of the next generation to which a fine line width is applied, and, at the same time, forming a guard ring for dividing the cell regions and the peripheral circuit regions.