Abstract: Provided is a method for manufacturing a polarizing plate, comprising a step of irradiating an optical laminate with ultraviolet rays having an emission wavelength band of 380 nm to 410 nm. The optical laminate sequentially comprises a first base film, a first adhesive layer, a linear polarizer, a second adhesive layer, a second base film and a reverse dispersion liquid crystal layer. The first adhesive layer and the second adhesive layer each comprise a photosensitizer for initiating a curing reaction in a wavelength band of 350 nm to 410 nm, and the ultraviolet rays are irradiated on the first base film side of the optical laminate.

Abstract: The present application relates to a method of generating a downlink frame. The method of generating the downlink frame includes: generating a first short sequence and a second short sequence indicating cell group information; generating a first scrambling sequence and a second scrambling sequence determined by the primary synchronization signal; generating a third scrambling sequence determined by the first short sequence and a fourth scrambling sequence determined by the second short sequence; scrambling the short sequences with the respective scrambling sequences; and mapping the secondary synchronization signal that includes the first short sequence scrambled with the first scrambling sequence, the second short sequence scrambled with the second scrambling sequence and the third scrambling sequence, the second short sequence scrambled with the first scrambling sequence and the first short sequence scrambled by the second scrambling sequence and the fourth scrambling sequence to a frequency domain.

Abstract: A method of forming a conductive metal line over a semiconductor wafer including forming a diffusion barrier layer over a top surface of the semiconductor wafer, and forming a seed metal layer over the diffusion barrier layer. A conductive metal layer is formed over the seed metal layer, the conductive metal layer selectively exposing a portion of the seed metal layer on the peripheral region of the semiconductor wafer. A partial etching process is performed on the conductive metal layer to remove the portion of the seed metal layer.

Abstract: A vacuum dryer and a method of drying a semiconductor device using the same are provided. In the present invention, a vacuum dryer using isopropyl alcohol vapor, including an outer bath, an inner bath, a main water supply line, a supplementary water supply line, an inner bath drain line, and an outer bath drain line, is provided. After cleaning the inside of the vacuum dryer, the inner bath is filled with the supplied deionized water and the deionized water is continuously overflowed. Then, the semiconductor substrate is loaded into the inner bath of the vacuum dryer to which the deionized is continuously overflowed. The loaded semiconductor substrate is dried by supplying the isopropyl alcohol vapor to the inner bath into which the semiconductor substrate is loaded.

Abstract: A vacuum dryer and a method of drying a semiconductor device using the same are provided. In the present invention, a vacuum dryer using isopropyl alcohol vapor, including an outer bath, an inner bath, a main water supply line, a supplementary water supply line, an inner bath drain line, and an outer bath drain line, is provided. After cleaning the inside of the vacuum dryer, the inner bath is filled with the supplied deionized water and the deionized water is continuously overflowed. Then, the semiconductor substrate is loaded into the inner bath of the vacuum dryer to which the deionized is continuously overflowed. The loaded semiconductor substrate is dried by supplying the isopropyl alcohol vapor to the inner bath into which the semiconductor substrate is loaded.