Abstract: Disclosed is a wireless battery management system and a battery pack including the same. The wireless battery management system may be operably coupled to a top-level controller, and includes a master BMS and a plurality of slave BMSs. The master BMS is configured to allocate different identification information to the plurality of slave BMSs using a wireless signal according to an identification information allocation command from the top-level controller. Each slave BMS may be configured to set its wireless address and regular ID by receiving the wireless signal when waking up by the top-level controller according to a predefined rule.

Abstract: The present disclosure includes a wireless control system, a wireless control method, and a battery pack. The wireless control system includes a master configured to wirelessly transmit a first command packet, and first to Nth slaves to which first to Nth IDs are allocated, respectively. When the first slave receives the first command packet, the first slave wirelessly transmits a first response packet including first battery information and the first ID. When a k+1th slave receives the first command packet, the k+1th slave stands by to receive a kth response packet for a preparation period and wirelessly transmits a k+1th response packet including k+1th battery information and a k+1th ID. When the kth response packet is received by the k+1th slave within the preparation period, the k+1th response packet further includes kth battery information and a kth ID.

Abstract: The present disclosure includes a wireless control system, a wireless connection method, and a battery pack. The wireless control system includes a master and a plurality of slaves. Each slave wirelessly transmits a response packet including an ID of each slave when it receives a first command packet wirelessly transmitted from the master. The master sets, as a first group, each slave to which is allocated the ID included in each response packet wirelessly received within a predetermined period of time from a time point at which the first command packet was transmitted, and sets, as a second group, each slave not set as the first group. The master wirelessly transmits a second command packet including the ID of each slave belonging to the second group.

Abstract: Disclosed is a wireless battery management system and a battery pack including the same. The wireless battery management system may be operably coupled to a top-level controller, and includes a master BMS and a plurality of slave BMSs. The master BMS is configured to allocate different identification information to the plurality of slave BMSs using a wireless signal according to an identification information allocation command from the top-level controller. Each slave BMS may be configured to set its wireless address and regular ID by receiving the wireless signal when waking up by the top-level controller according to a predefined rule.

Abstract: A wireless battery management system and a battery pack including the same. The wireless battery management system includes a plurality of slave BMSs coupled to a plurality of battery modules installed one-to-one correspondence, and a master BMS configured to wirelessly transmit a trigger signal to the plurality of slave BMSs, the trigger signal being for ID allocation to the plurality of slave BMSs. Each slave BMS is configured to generate a response signal including a temporary ID in response to the trigger signal, each slave BMS having a different temporary ID, and wirelessly transmit the response signal to the master BMS. The master BMS is configured to receive the response signal from each of the plurality of slave BMSs, and determine formal IDs to be allocated to each slave BMS based on a received signal strength of the response signal from the given slave BMS.

Abstract: A method of controlling distortion of an exposure process is provided. The method includes aligning an exposure mask with a wafer, forming a first test pattern on the wafer by performing a first exposure with the exposure mask and a first illumination system, forming a photoresist layer on an entire surface of the wafer including the first test pattern, performing a second exposure with the exposure mask and a second illumination system to form a second test pattern overlapping with the first test pattern, extracting a distortion value between the first test pattern and the second test pattern, and correcting the exposure mask or fabricating a corrected exposure mask using the distortion value.

Abstract: A method of fabricating a line pattern extending in a first direction in a photoresist layer on a wafer by forming the photoresist layer on the wafer and implementing exposure on the wafer formed with the photoresist layer by using a photomask having a main pattern provided with a plurality of unit patterns slanted by a predetermined angle relative to the first direction and arranged along the first direction.

Abstract: Disclosed here in is a method for patterning an active region in a semiconductor device using a space patterning process that includes forming a partition pattern having partition pattern elements arranged in a square shape on a semiconductor substrate; forming a spacer on side walls of the partition pattern; removing the partition pattern; separating the spacer into first and second spacer portions to expose a portion of the semiconductor substrate; and etching the exposed portion of the semiconductor substrate to form a trench, wherein portions of the semiconductor substrate overlapped with the first and second spacer portions define an active region.

Abstract: A method for correcting a layout with a pitch change section may include disposing a pattern layout with the pitch change section having a first pattern and a second pattern at a pitch relatively larger than that of the first pattern, measuring the pitch change from the pattern layout, a step of measuring an aerial image intensity by performing a simulation operation on the area with the pitch change section; modifying the pitch of the layout in the pitch change section based on a threshold intensity value at which the pattern is formed; and processing the layout correction to cause the pitch to exist within the threshold range by comparing the image intensity of the modified layout with the image intensity of the reference area.

Abstract: Disclosed is a photomask for forming a line-type pattern extending in a first direction, which includes a light transmitting substrate, and a main pattern corresponding to the line-type pattern provided with a plurality of unit patterns slanted relative to the first direction by a predetermined angle and arranged on the light transmitting substrate along the first direction.

Abstract: A photomask for double exposure, and a double exposure method using the same are disclosed. The photomask for double exposure comprises a mask substrate divided into first and second regions equally arranged to upper and lower sides on different sides, respectively, a first mask pattern formed on the first region of the mask substrate, and a second mask pattern formed on the second region of the mask substrate. The photomask and the double exposure method using the same enable a finer photoresist pattern to be formed on a semiconductor wafer, while minimizing reduction in yield and productivity due to misalignment and replacement.

Abstract: A multi-transmission phase mask, and an exposure method using the same are disclosed. The mask comprises a transparent substrate, a light shielding film formed on the transparent substrate and defining a light transmission region and a light shielding region, and a phase inversion region formed on a predetermined portion of the light transmission region so as to allow exposure light to be transmitted therethrough with a phase of the light being inverted. In the method, a pattern of a semiconductor diode is exposed on a wafer by illuminating exposure light to the multi-transmission phase mask through a modified illumination system comprising at least two poles, each having a preset opening angle. According to the present invention, a defect wherein a pattern unit of a storage node contact pattern is not regularly opened on a wafer, or a defect wherein the pattern units are bridged to each other can be prevented from occurring.

Abstract: Disclosed here in is a method for patterning an active region in a semiconductor device using a space patterning process that includes forming a partition pattern having partition pattern elements arranged in a square shape on a semiconductor substrate; forming a spacer on side walls of the partition pattern; removing the partition pattern; separating the spacer into first and second spacer portions to expose a portion of the semiconductor substrate; and etching the exposed portion of the semiconductor substrate to form a trench, wherein portions of the semiconductor substrate overlapped with the first and second spacer portions define an active region.

Abstract: A method for correcting a layout with a pitch change section may include disposing a pattern layout with the pitch change section having a first pattern and a second pattern at a pitch relatively larger than that of the first pattern, measuring the pitch change from the pattern layout, a step of measuring an aerial image intensity by performing a simulation operation on the area with the pitch change section; modifying the pitch of the layout in the pitch change section based on a threshold intensity value at which the pattern is formed; and processing the layout correction to cause the pitch to exist within the threshold range by comparing the image intensity of the modified layout with the image intensity of the reference area.

Abstract: A layout of vertical patterns in a mask used in a dipole exposure apparatus employing a dipole as an aperture, including the vertical patterns disposed vertically to the dipole, and tabs, having critical dimensions broader than those of the vertical patterns, crossing edges of the vertical patterns. The tabs having critical dimensions broader than those of the vertical patterns are additionally inserted into the edges of the vertical patterns disposed vertically to the dipole, thereby minimizing the difference in critical dimensions between central and edge portions of the vertical patterns so that the vertical patterns maintain uniform fine critical dimensions.

Abstract: A layout of vertical patterns in a mask used in a dipole exposure apparatus employing a dipole as an aperture, including the vertical patterns disposed vertically to the dipole, and tabs, having critical dimensions broader than those of the vertical patterns, crossing edges of the vertical patterns. The tabs having critical dimensions broader than those of the vertical patterns are additionally inserted into the edges of the vertical patterns disposed vertically to the dipole, thereby minimizing the difference in critical dimensions between central and edge portions of the vertical patterns so that the vertical patterns maintain uniform fine critical dimensions.