Patents by Inventor Chan Hoon Kim

Chan Hoon Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Conductive single crystal silicon particles coated with highly conductive carbon containing nanopores and ultrathin metal film, high capacity lithium anode material including the same, and preparing method thereof
    Patent number: 10164253
    Abstract: Provided are conductive single crystal silicon particles coated with highly conductive carbon containing nanopores and an ultrathin metal film, a high capacity anode material including the same, and a preparing method thereof. The anode material includes conductive single crystal silicon particles each on which at least one element selected from group-III and group-V elements is doped; a thin metal layer formed to coat the surface of each of the conductive single crystal silicon particles; and a highly conductive carbon coating layer formed on the thin metal layer, wherein nanopores are formed between the conductive single crystal silicon particle and the carbon coating layer.
    Type: Grant
    Filed: December 15, 2015
    Date of Patent: December 25, 2018
    Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Il-Doo Kim, Chan Hoon Kim
  • CONDUCTIVE SINGLE CRYSTAL SILICON PARTICLES COATED WITH HIGHLY CONDUCTIVE CARBON CONTAINING NANOPORES AND ULTRATHIN METAL FILM, HIGH CAPACITY LITHIUM ANODE MATERIAL INCLUDING THE SAME, AND PREPARING METHOD THEREOF
    Publication number: 20170162868
    Abstract: Provided are conductive single crystal silicon particles coated with highly conductive carbon containing nanopores and an ultrathin metal film, a high capacity anode material including the same, and a preparing method thereof. The anode material includes conductive single crystal silicon particles each on which at least one element selected from group-III and group-V elements is doped; a thin metal layer formed to coat the surface of each of the conductive single crystal silicon particles; and a highly conductive carbon coating layer formed on the thin metal layer, wherein nanopores are formed between the conductive single crystal silicon particle and the carbon coating layer.
    Type: Application
    Filed: December 15, 2015
    Publication date: June 8, 2017
    Inventors: Il-Doo Kim, Chan Hoon Kim