Patents by Inventor Chan Hyeong LEE
Chan Hyeong LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230378263Abstract: A semiconductor device includes an active pattern; gate spacers on the active pattern defining a gate trench; a gate insulating layer along a sidewall and a bottom surface of the gate trench; a first conductive layer on the gate insulating layer; a second conductive layer on the first conductive layer in the gate trench; a third conductive layer on the second conductive layer in the gate trench and including a first portion between parts of the second conductive layer, and a second portion on the first portion and in contact with an upper surface of the second conductive layer; and a capping pattern on the second and third conductive layers and including a portion between the gate insulating layer and the second portion, and in contact with a sidewall of the second portion, wherein a width of the second portion is greater than a width of the first portion.Type: ApplicationFiled: December 21, 2022Publication date: November 23, 2023Inventors: Jin Kyu JANG, Byoung Hoon LEE, Chan Hyeong LEE, Nam Gyu CHO
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Patent number: 11588039Abstract: A semiconductor device includes an active region in a substrate, at least one nano-sheet on the substrate and spaced apart from a top surface of the active region, a gate above or below the nano-sheet, a gate insulating layer between the at least one nano-sheet and the gate, and source/drain regions on the active region at both sides of the at least one nano-sheet. The at least one nano-sheet includes a channel region; a gate disposed above or below the nano-sheet and including a single metal layer having different compositions of metal atoms of a surface and an inside thereof; a gate insulating layer between the nano-sheet and the gate; and source/drain regions disposed in the active region of both sides of the at least one nano-sheet.Type: GrantFiled: November 25, 2019Date of Patent: February 21, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Chan-hyeong Lee, Hoon-joo Na, Sung-in Suh, Min-woo Song, Byoung-hoon Lee, Hu-yong Lee, Sang-jin Hyun
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USE OF ENDOTHELIN RECEPTOR INHIBITOR FOR INHIBITING EXOSOME SECRETION OR INHIBITING PD-L1 EXPRESSION
Publication number: 20220317132Abstract: The present invention relates to a use of an endothelin receptor inhibitor for inhibiting exosome secretion or inhibiting PD-L1 expression. It was confirmed that the endothelin receptor inhibitor inhibits endothelin receptors, which are currently known as a target for anticancer drug development, to not only inhibit the secretion of cancer cell-derived exosomes, but also reduce the expression of PD-L1 in cells, and is thus effective for cancer treatment when used in combination with existing anticancer drugs or when used alone in the form of a drug. Accordingly, the present invention can be used in novel modes of anticancer drug development using drugs exhibiting immune-checkpoint inhibition effects and exosome secretion inhibition effects.Type: ApplicationFiled: September 9, 2020Publication date: October 6, 2022Applicant: KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATIONInventors: Moon-Chang BAEK, Eun-Ju IM, Chan-Hyeong LEE -
Publication number: 20220254884Abstract: A semiconductor device includes an active pattern disposed on a substrate. A gate insulating film is disposed on the active pattern and extends along the active pattern. A work function adjustment pattern is disposed on the gate insulating film and extends along the gate insulating film. A gate electrode is disposed on the work function adjustment pattern. The work function adjustment pattern includes a first work function adjustment film, a second work function adjustment film that includes aluminum and wraps the first work function adjustment film, and a barrier film including titanium silicon nitride (TiSiN). A silicon concentration of the barrier film is in a range of about 30 at % or less.Type: ApplicationFiled: October 18, 2021Publication date: August 11, 2022Inventors: Jae-Jung KIM, Sang Yong KIM, Byoung Hoon LEE, Chan Hyeong LEE
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Patent number: 11177364Abstract: Provided are an integrated circuit device and a method of manufacturing the same. The integrated circuit device includes: a semiconductor substrate; a device isolation layer defining an active region of the semiconductor substrate; a gate insulating layer on the active region; a gate stack on the gate insulating layer; a spacer on a sidewall of the gate stack; and an impurity region provided on both sides of the gate stack, wherein the gate stack includes a metal carbide layer and a metal layer on the metal carbide layer, wherein the metal carbide layer includes a layer having a carbon content of about 0.01 at % to about 15 at %.Type: GrantFiled: July 24, 2020Date of Patent: November 16, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Byoung-Hoon Lee, Hoon-Joo Na, Sung-In Suh, Min-Woo Song, Chan-Hyeong Lee, Hu-Yong Lee, Sang-Jin Hyun
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Publication number: 20200365706Abstract: Provided are an integrated circuit device and a method of manufacturing the same. The integrated circuit device includes: a semiconductor substrate; a device isolation layer defining an active region of the semiconductor substrate; a gate insulating layer on the active region; a gate stack on the gate insulating layer; a spacer on a sidewall of the gate stack; and an impurity region provided on both sides of the gate stack, wherein the gate stack includes a metal carbide layer and a metal layer on the metal carbide layer, wherein the metal carbide layer includes a layer having a carbon content of about 0.01 at % to about 15 at %.Type: ApplicationFiled: July 24, 2020Publication date: November 19, 2020Inventors: Byoung-Hoon Lee, HOON-JOO NA, SUNG-IN SUH, MIN-WOO SONG, CHAN-HYEONG LEE, HU-YONG LEE, SANG-JIN HYUN
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Patent number: 10756195Abstract: Provided are an integrated circuit device and a method of manufacturing the same. The integrated circuit device includes: a semiconductor substrate; a device isolation layer defining an active region of the semiconductor substrate; a gate insulating layer on the active region; a gate stack on the gate insulating layer; a spacer on a sidewall of the gate stack; and an impurity region provided on both sides of the gate stack, wherein the gate stack includes a metal carbide layer and a metal layer on the metal carbide layer, wherein the metal carbide layer includes a layer having a carbon content of about 0.01 at % to about 15 at %.Type: GrantFiled: November 2, 2018Date of Patent: August 25, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Byoung-Hoon Lee, Hoon-Joo Na, Sung-In Suh, Min-Woo Song, Chan-Hyeong Lee, Hu-Yong Lee, Sang-Jin Hyun
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Publication number: 20200098882Abstract: A semiconductor device includes an active region in a substrate, at least one nano-sheet on the substrate and spaced apart from a top surface of the active region, a gate above or below the nano-sheet, a gate insulating layer between the at least one nano-sheet and the gate, and source/drain regions on the active region at both sides of the at least one nano-sheet. The at least one nano-sheet includes a channel region; a gate disposed above or below the nano-sheet and including a single metal layer having different compositions of metal atoms of a surface and an inside thereof; a gate insulating layer between the nano-sheet and the gate; and source/drain regions disposed in the active region of both sides of the at least one nano-sheet.Type: ApplicationFiled: November 25, 2019Publication date: March 26, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Chan-hyeong LEE, Hoon-joo Na, Sung-in Suh, Min-woo Song, Byoung-hoon Lee, Hu-yong Lee, Sang-jin Hyun
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Patent number: 10529816Abstract: A semiconductor device includes an active region in a substrate, at least one nano-sheet on the substrate and spaced apart from a top surface of the active region, a gate above or below the nano-sheet, a gate insulating layer between the at least one nano-sheet and the gate, and source/drain regions on the active region at both sides of the at least one nano-sheet. The at least one nano-sheet includes a channel region; a gate disposed above or below the nano-sheet and including a single metal layer having different compositions of metal atoms of a surface and an inside thereof; a gate insulating layer between the nano-sheet and the gate; and source/drain regions disposed in the active region of both sides of the at least one nano-sheet.Type: GrantFiled: March 8, 2018Date of Patent: January 7, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Chan-hyeong Lee, Hoon-joo Na, Sung-in Suh, Min-woo Song, Byoung-hoon Lee, Hu-yong Lee, Sang-jin Hyun
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Patent number: 10340358Abstract: A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate, a first active pattern disposed on the substrate and spaced apart from the substrate, a gate insulating film which surrounds the first active pattern, a first work function adjustment film which surrounds the gate insulating film and includes carbon, and a first barrier film which surrounds the first work function adjustment film, in which a carbon concentration of the first work function adjustment film increases as it goes away from the first barrier film.Type: GrantFiled: April 12, 2018Date of Patent: July 2, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung In Suh, Hoon Joo Na, Min Woo Song, Byoung Hoon Lee, Chan Hyeong Lee, Hu Yong Lee, Sang Jin Hyun
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Publication number: 20190140066Abstract: Provided are an integrated circuit device and a method of manufacturing the same. The integrated circuit device includes: a semiconductor substrate; a device isolation layer defining an active region of the semiconductor substrate; a gate insulating layer on the active region; a gate stack on the gate insulating layer; a spacer on a sidewall of the gate stack; and an impurity region provided on both sides of the gate stack, wherein the gate stack includes a metal carbide layer and a metal layer on the metal carbide layer, wherein the metal carbide layer includes a layer having a carbon content of about 0.01 at % to about 15 at %.Type: ApplicationFiled: November 2, 2018Publication date: May 9, 2019Inventors: Byoung-Hoon Lee, HOON-JOO NA, SUNG-IN SUH, MIN-WOO SONG, CHAN-HYEONG LEE, HU-YONG LEE, SANG-JIN HYUN
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Publication number: 20190081151Abstract: A semiconductor device includes an active region in a substrate, at least one nano-sheet on the substrate and spaced apart from a top surface of the active region, a gate above or below the nano-sheet, a gate insulating layer between the at least one nano-sheet and the gate, and source/drain regions on the active region at both sides of the at least one nano-sheet. The at least one nano-sheet includes a channel region; a gate disposed above or below the nano-sheet and including a single metal layer having different compositions of metal atoms of a surface and an inside thereof; a gate insulating layer between the nano-sheet and the gate; and source/drain regions disposed in the active region of both sides of the at least one nano-sheet.Type: ApplicationFiled: March 8, 2018Publication date: March 14, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Chan-hyeong LEE, Hoon-joo NA, Sung-in SUH, Min-woo SONG, Byoung-hoon LEE, Hu-yong LEE, Sang-jin HYUN
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Publication number: 20190081152Abstract: A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate, a first active pattern disposed on the substrate and spaced apart from the substrate, a gate insulating film which surrounds the first active pattern, a first work function adjustment film which surrounds the gate insulating film and includes carbon, and a first barrier film which surrounds the first work function adjustment film, in which a carbon concentration of the first work function adjustment film increases as it goes away from. the first barrier film.Type: ApplicationFiled: April 12, 2018Publication date: March 14, 2019Inventors: Sung In Suh, Hoon Joo Na, Min Woo Song, Byoung Hoon Lee, Chan Hyeong Lee, Hu Yong Lee, Sang Jin Hyun
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Publication number: 20180261677Abstract: A semiconductor device includes a gate insulating layer disposed on a substrate, a first work function tuning layer disposed on the gate insulating layer, a lower barrier conductive layer on and in contact with the first work function tuning layer, and an upper barrier conductive layer on and in contact with the lower barrier conductive layer. The upper barrier conductive layer and the lower barrier conductive layer include a material in common, e.g., they may each include a titanium nitride (TiN) layer.Type: ApplicationFiled: July 19, 2017Publication date: September 13, 2018Inventors: Byoung Hoon LEE, Hyeon Jin KIM, Hoon Joo NA, Sung In SUH, Chan Hyeong LEE, Hu Yong LEE, Seong Hoon JEONG, Sang Jin HYUN