Abstract: Disclosed herein are an apparatus and method for classifying clothing attributes based on deep learning. The apparatus includes memory for storing at least one program and a processor for executing the program, wherein the program includes a first classification unit for outputting a first classification result for one or more attributes of clothing worn by a person included in an input image, a mask generation unit for outputting a mask tensor in which multiple mask layers respectively corresponding to principal part regions obtained by segmenting a body of the person included in the input image are stacked, a second classification unit for outputting a second classification result for the one or more attributes of the clothing by applying the mask tensor, and a final classification unit for determining and outputting a final classification result for the input image based on the first classification result and the second classification result.

Abstract: An image sensor according to an example embodiment of includes a first pixel and a second pixel in a first row. The first pixel includes a first photoelectric conversion element at a first depth in a semiconductor substrate and the first photoelectric conversion element is configured to convert a first visible light spectrum into a first photo charge, and the second pixel includes a second photoelectric conversion element at a second depth from the first depth in the semiconductor substrate, the second photoelectric conversion element is at least partially overlapped by the first photoelectric conversion element in a vertical direction, and the second photoelectric conversion element is configured to convert a second visible light spectrum into a second photo charge.

Abstract: An image sensor according to an example embodiment of includes a first pixel and a second pixel in a first row. The first pixel includes a first photoelectric conversion element at a first depth in a semiconductor substrate and the first photoelectric conversion element is configured to convert a first visible light spectrum into a first photo charge, and the second pixel includes a second photoelectric conversion element at a second depth from the first depth in the semiconductor substrate, the second photoelectric conversion element is at least partially overlapped by the first photoelectric conversion element in a vertical direction, and the second photoelectric conversion element is configured to convert a second visible light spectrum into a second photo charge.