Abstract: Provided is yarn for a cell culture scaffold. The yarn for a cell culture scaffold according to an exemplary embodiment of the present invention includes slitting yarn produced by cutting a compressed nanofiber web to a predetermined width. Accordingly, by creating microenvironments suitable for migration, proliferation and differentiation of cells, cell viability may be enhanced and cells may be three-dimensionally proliferated. In addition, a scaffold according to the present invention has a mechanical strength sufficient for prevention of disruption of the scaffold which occurs during cell culture, such that cells may be stably proliferated. Further, the scaffold according to the present invention uses slitting yarn formed of the compressed nanofiber web, thereby having pores with various sizes, and therefore cell proliferation and cell viability may be enhanced by creation of an extracellular matrix-like environment.

Abstract: A semiconductor package is provided including: a package substrate with a top surface, wherein the top surface extends to a peripheral side surface of the package substrate; a stiffener with a lateral portion and a basket portion, wherein the lateral portion is positioned over the top surface of the package substrate and the basket portion overhangs from the top surface of the package substrate adjacent to the peripheral side surface of the package substrate; at least one semiconductor die positioned in the basket portion of the stiffener; and at least one wire attached to the at least one semiconductor die and extending out of the basket portion of the stiffener.

Abstract: An electronic device includes a package substrate; a memory integrated circuit (IC) mounted on the package substrate; a mold layer including one or more chiplets and a base IC die within the mold layer, the one or more chiplets arranged on the base IC die; a top chiplet mounted on a surface of the mold layer, wherein a combined height of the mold layer and the top chiplet substantially matches a height of the memory IC; and a heat spreader having a uniform surface contacting the memory IC and the top chiplet.

Abstract: Embodiments disclosed herein include package substrates. In an embodiment, the package substrate comprises a core. In an embodiment, the core comprises a first sub-core layer and a second sub-core layer. In an embodiment, a via is provided through the first sub-core layer and the second sub-core layer. In an embodiment, the via comprises a first hourglass shape in the first sub-core layer and a second hourglass shape in the second sub-core layer. In an embodiment, a front-side buildup layer is over the core and a backside buildup layer is under the core.

Abstract: An electronic device is disclosed. In one example, the electronic device includes a circuit board comprising a recess a package in the recess, a semiconductor die coupled to the first side of the package, and a bridge extending from the first side of the package to the circuit board wherein the bridge electrically couples the package to the circuit board.

Abstract: A semiconductor device and associated methods are disclosed. In one example, a processor die is coupled to a first side of a package substrate, and a memory die coupled to a second side of the package substrate. A system accelerator die is further coupled to the package substrate. In selected examples, the system accelerator die provides performance improvements, such as higher cached memory speed and/or higher memory bandwidth.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device includes a circuit board comprising a recess a package in the recess, a semiconductor die coupled to the first side of the package, and a bridge extending from the first side of the package to the circuit board wherein the bridge electrically couples the package to the circuit board.

Abstract: A semiconductor device and associated methods are disclosed. In one example, a processor die is coupled to a first side of a package substrate, and a memory die coupled to a second side of the package substrate. A system accelerator die is further coupled to the package substrate. In selected examples, the system accelerator die provides performance improvements, such as higher cached memory speed and/or higher memory bandwidth.

Abstract: “Hybrid” transmission line circuits employing multiple interconnect levels for the propagation, or return, of a single signal line across a package length are described. In package transmission line circuit embodiments, a signal line employs co-located traces in two different interconnect levels that are electrically coupled together. In further embodiments, a reference plane is provided above, below or co-planar with at least one of the co-locate traces. In embodiments, a balanced signal line pair includes first and second co-located traces in two adjacent interconnect levels as a propagation signal line and third and fourth co-located traces in the two adjacent interconnect levels as a return signal line with a ground plane co-planar with, and/or above and/or below the two adjacent interconnect levels.

Abstract: “Hybrid” transmission line circuits employing multiple interconnect levels for the propagation, or return, of a single signal line across a package length are described. In package transmission line circuit embodiments, a signal line employs co-located traces in two different interconnect levels that are electrically coupled together. In further embodiments, a reference plane is provided above, below or co-planar with at least one of the co-locate traces. In embodiments, a balanced signal line pair includes first and second co-located traces in two adjacent interconnect levels as a propagation signal line and third and fourth co-located traces in the two adjacent interconnect levels as a return signal line with a ground plane co-planar with, and/or above and/or below the two adjacent interconnect levels.

Abstract: “Hybrid” transmission line circuits employing multiple interconnect levels for the propagation, or return, of a single signal line across a package length are described. In package transmission line circuit embodiments, a signal line employs co-located traces in two different interconnect levels that are electrically coupled together. In further embodiments, a reference plane is provided above, below or co-planar with at least one of the co-locate traces. In embodiments, a balanced signal line pair includes first and second co-located traces in two adjacent interconnect levels as a propagation signal line and third and fourth co-located traces in the two adjacent interconnect levels as a return signal line with a ground plane co-planar with, and/or above and/or below the two adjacent interconnect levels.

Abstract: “Hybrid” transmission line circuits employing multiple interconnect levels for the propagation, or return, of a single signal line across a package length are described. In package transmission line circuit embodiments, a signal line employs co-located traces in two different interconnect levels that are electrically coupled together. In further embodiments, a reference plane is provided above, below or co-planar with at least one of the co-locate traces. In embodiments, a balanced signal line pair includes first and second co-located traces in two adjacent interconnect levels as a propagation signal line and third and fourth co-located traces in the two adjacent interconnect levels as a return signal line with a ground plane co-planar with, and/or above and/or below the two adjacent interconnect levels.

Abstract: In one embodiment, the invention may include a semiconductor package substrate with a plated-through hole (PTH) via. One or more conduits for transmitting signals can be located in the PTH via. The PTH via may shield the signals in the conduits from environmental noise (e.g., EMI). Other embodiments are described and claimed.