Abstract: The present disclosure provides a TFT. The TFT includes a gate electrode, an insulating layer on the gate electrode, and an active layer on the insulating layer. The active layer includes an annealed layer and an a-Si layer. The annealed layer is between the a-Si layer and the insulating layer. The annealed layer is made of amorphous silicon material by excimer laser annealing. The present disclosure further provides a TFT array substrate and a method of manufacturing a TFT.

Abstract: A display panel includes a substrate, a plurality of LEDs, a planarization layer, and a patterned first conductive layer. The plurality of LEDs are on the substrate, each of the plurality of LEDs includes a first electrode facing a front side of the display panel. The planarization layer covers the plurality of LEDs. The first conductive layer is on the planarization layer. The planarization layer defines a plurality of holes, the electrode is exposed by a corresponding hole of the plurality of holes, and the first conductive layer electrical connects to the first electrode through the corresponding hole. The first conductive layer further comprises a trace portion and a plurality of reinforcing portions, each of the plurality of reinforcing portions is aligned with the corresponding hole and is attached to the trace portion. Methods of fabricating the display panel are further disclosed.