Abstract: A photolithography system includes a light source, a photomask stage, a projection optical system and a wafer stage, and the projection optical system includes an anamorphic lens. In a photolithography method, a wafer and a photomask are mounted on the wafer stage and the photomask stage, respectively, and a first exposure process is performed using the photomask to transfer layouts of patterns included in the photomask to a first half field of the wafer. A relative position of the photomask with respect to the wafer is changed, and a second exposure process is performed to transfer the layouts of the patterns included in the photomask to a second half field of the wafer.

Abstract: The present disclosure relates to a thermoplastic polyurethane composition for injection molding and a method for manufacturing the same. Specifically, the thermoplastic polyurethane composition includes 0.5% by weight to 10.0% by weight of a sulfonate diol, 13% by weight to 60% by weight of an isocyanate, 30% by weight to 70% by weight of an ether-containing polyester polyol, and 5% by weight to 40% by weight of a chain extender.

Abstract: In an overlay measurement method, an overlay mark having programmed overlay values is provided. The overlay mark is scanned with an electron beam to obtain a voltage contrast image. A defect function that changes according to the overlay value is obtained from voltage contrast image data. Self-cross correlation is performed on the defect function to determine an overlay.

Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.

Abstract: Provided are a dielectric material, a device including the dielectric material, and a method of preparing the dielectric material, in which the dielectric material may include: a layered perovskite compound, wherein the layered perovskite compound may include at least one selected from a Dion-Jacobson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, a temperature coefficient of capacitance (TCC) of a capacitance at 200° C. with respect to a capacitance at 40° C. may be in a range of about ?15 percent (%) to about 15%, and a permittivity of the dielectric material may be 200 or greater in a range of about 1 kilohertz (kHz) to about 1 megahertz (MHz).

Abstract: A sintering jig according to the disclosure includes a first plate including a plurality of protrusions and a second plate stacked on the first plate and including through holes corresponding to the protrusions. The through hole includes a cylindrical portion through which the protrusion enter and exit and a conical portion widening towards an upper surface of the second plate from the cylindrical portion.

Abstract: A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A2B4O11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The A2B4O11 material may be Na2Nb4O11 in which bandgap energy thereof is greater than that of STO. The A2B4O11 material may have relative density that is greater than 90% or more.

Abstract: Provided are a dielectric thin film, an integrated device including the same, and a method of manufacturing the dielectric thin film. The dielectric thin film includes an oxide having a perovskite-type crystal structure represented by Formula 1 below and wherein the dielectric thin film comprises 0.3 at % or less of halogen ions or sulfur ions. A2-xB3-yO10-z??<Formula 1> In Formula 1, A, B, x, y, and z are disclosed in the specification.

Abstract: A two-dimensional perovskite material, a dielectric material including the same, and a multi-layered capacitor. The two-dimensional perovskite material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of a plurality of the monolayer nanosheets, or a combination thereof, wherein the two-dimensional perovskite material a first phase having a two-dimensional crystal structure is included in an amount of greater than or equal to about 80 volume %, based on 100 volume % of the two-dimensional perovskite material, and the two-dimensional perovskite material is represented by Chemical Formula 1.

Abstract: A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A2B4O11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The A2B4O11 material may be Na2Nb4O11 in which bandgap energy thereof is greater than that of STO. The A2B4O11 material may have relative density that is greater than 90% or more.

Abstract: Provided is a method of preparing a dielectric film having a nanoscale three-dimensional shape and including an oxide, the oxide represented by RAMBOC where R is a divalent element and M is a pentavalent element, the method may include synthesizing a target material, the target material including the divalent element and the pentavalent element; and forming the oxide by depositing the divalent element and the pentavalent element, from the target material, onto a substrate such that the oxide includes a perovskite-type crystal structure, 1.3<B/A<1.7, and 9.0?C<10.0.

Abstract: A reflected light wavelength scanning device having a silicon photonics interrogator is provided. The device includes: a light source module for outputting broadband light; an optical sensor that receives light output from the light source module through a circulator, reflects light in a specific band to the circulator, and transmits light in a band other than the specific band; and an interrogator for selectively injecting the polarized light by separating the polarized light from the reflected light input through the circulator.

Abstract: Provided are a dielectric monolayer thin film, a capacitor and a semiconductor device each including the dielectric monolayer thin film, and a method of forming the dielectric monolayer thin film, the dielectric monolayer thin film including an oxide which is represented by Formula 1 and has a perovskite-type crystal structure, wherein the oxide has a surface chemically bonded with hydrogen. A2Bn?3CnO3n+1??<Formula 1> wherein, in Formula 1, A is a divalent element, B is a monovalent element, C is a pentavalent element, and n is a number from 3 to 8.

Abstract: An electronic device including a display unit including light-emitting areas providing an image and non-light-emitting areas adjacent to the light-emitting areas, and an input sensing unit disposed on the display unit and including: a first insulating layer disposed on the display unit; a first conductive layer disposed on the first insulating layer and including first conductive patterns; a second insulating layer including first contact holes exposing the first conductive patterns and second contact holes exposing the first insulating layer overlapping each other, and disposed on the first insulating layer and covering the first conductive layer; and a second conductive layer formed of mesh lines that cross each other and define mesh openings overlapping the corresponding light-emitting areas, in which each of the first contact holes and the second contact holes overlaps intersection portions of the mesh lines.

Abstract: A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.

Abstract: The present disclosure provides a method and apparatus for determining coupling and decoupling positions between trains. In at least one embodiment, the present disclosure provides a method performed by an apparatus for determining coupling and decoupling positions between trains, the method comprising collecting performance data, simulation data, and real-time data, calculating a first parameter and a second parameter, and determining the coupling and decoupling positions between the trains.

Abstract: An electronic device including a display unit and an input sensing unit including a sensing insulating layer including a first insulating layer disposed on the display unit, and a second insulating layer disposed on the first insulating layer and including first contact holes and second contact holes, a first sensing electrode including first sensing patterns and a plurality of first conductive patterns disposed between the first sensing patterns, and a second sensing electrode including second sensing patterns and second conductive patterns disposed between the second sensing patterns, in which the first sensing patterns and the first conductive patterns are coupled to each other through corresponding ones of the first contact holes, and at least one of the first sensing electrode and the second sensing electrode is in contact with the first insulating layer through the second contact holes.

Abstract: A reflected light wavelength scanning device having a silicon photonics interrogator is provided. The device includes: a light source module for outputting broadband light; an optical sensor that receives light output from the light source module through a circulator, reflects light in a specific band to the circulator, and transmits light in a band other than the specific band; and an interrogator for selectively injecting the polarized light by separating the polarized light from the reflected light input through the circulator.

Abstract: An electrode structure includes: a first nonconductive layer; a first conductive layer disposed on the first nonconductive layer; a second nonconductive layer disposed on the first conductive layer; a second conductive layer disposed on the second nonconductive layer; and a third nonconductive layer disposed on the second conductive layer, where at least one of the first conductive layer and the second conductive layer includes a two-dimensional conductive material.

Abstract: A dielectric material, a method of manufacturing thereof, and a dielectric device and an electronic device including the same. A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of the monolayer nanosheets, or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure and the two-dimensional layered material is represented by Chemical Formula 1.