Patents by Inventor Chan-Kwon Oh

Chan-Kwon Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20020102807
    Abstract: A method for forming a storage node electrode of a semiconductor device, includes the steps of: forming a contact plug in an interlayer insulation film on a semiconductor substrate; sequentially stacking etch stop films, a sacrificed insulation film, a polysilicon hard mask and a reflection preventive film on the whole surface of the interlayer insulation film; forming an opening by etching the hard mask, the sacrificed insulation film and the etch stop films to remove the reflection preventive film to obtain a storage node electrode region; forming a storage node electrode by depositing a conductive material over the resultant structure; forming a filling film for filling up the opening; etching the filling film, the storage node electrode and the hard mask so that the hard mask has a predetermined thickness; and etching the resultant structure with a chemical mechanical polishing process so that the residual hard mask can be completely removed.
    Type: Application
    Filed: June 25, 2001
    Publication date: August 1, 2002
    Inventors: Chang-II Kim, Chan-Kwon Oh