Abstract: A display device includes, first and second electrodes on a substrate, a buffer layer covering the first and second electrodes, a light emitting element between the first and second electrodes a first contact electrode on the first electrode electrically contacting an end of the light emitting element, and a second contact electrode on the second electrode electrically contacting another end of the light emitting element, and an active layer on the buffer layer, and a first connection electrode electrically contacting at least one side of the active material layer the first and second contact electrodes, and the active material layer are on a same layer, and a thickness of the first electrode and a thickness of the second electrode is greater than about 800 nm.

Abstract: A substrate processing apparatus are provided. The substrate processing apparatus allows a supply flow rate per unit time for process gas supplied to the central area of a substrate to be greater than a supply flow rate per unit time for process gas supplied to an edge area of the substrate, when processing the edge area of the substrate supported by the chuck.

Abstract: Visual artifact detection systems and methods are disclosed herein. In an example system, optical characteristic measurements (e.g., a luminance value) for a display are obtained over a length of time, such as during power cycle events of a computing device coupled to the display. Based on the measurements, ripple values are generated, where each ripple value indicates a change of the optical characteristic over a period of time. A first ripple value is identified that exceeds a threshold and a first time window for identifying a subsequent ripple exceeding the threshold is commenced. If a second ripple value exceeds the threshold in the first time window, a determination is made that the first ripple value corresponds to a visual artifact on the display. In response, a visual artifact indication is generated, such as a notification to a user and/or a dynamic adjustment to a display parameter for remediating the artifact.

Abstract: Methods for forming a semiconductor structure and semiconductor structures are described. The method comprises non-selectively depositing an amorphous silicon layer on a top surface and a sidewall surface of at least one contact trench on a substrate and a crystalline silicon layer on a bottom surface of the at least one contact trench at a temperature less than or equal to 400° C., the bottom surface including a source/drain material. The amorphous silicon layer is selectively removed from the top surface and the sidewall surface at a temperature less than or equal to 400° C. The method may be performed in a processing chamber without breaking vacuum.

Abstract: An artificial intelligence (AI) feedback method includes: providing input 1 and input 2, providing an initial condition for a popularity frequency value or ranking value of information related to input 2 from input 1, generating a two-dimensional (2D) information table from the initial condition, adding the popularity frequency value or ranking value to corresponding coordinates in the 2D information table and matching knowledge, generating a 2D pseudolinear transformation table from the 2D information table, performing pseudolinear transformation multiple times to form a 2D unique characteristic table and deriving information of coordinates whose characteristic vector is not changed as a deep truth value, and organizing and storing a context of knowledge formed by connecting the deep truth value by category.

Abstract: A voltage converter including first to fourth switches between a first voltage node and ground, fifth to eighth switches between the first voltage node and the ground, a first floating capacitor between a first node between the first and second switches and a second node between the third and fourth switches, a second floating capacitor between a third node between the fifth and sixth switches and a fourth node between the seventh and eighth switches, a ninth switch between a second voltage node and a center node, a first inductor between the second node and a third voltage node, a center capacitor between the center node and the ground, a tenth switch between the second voltage node and the third voltage node, a first capacitor between the third voltage node and the ground, and a second capacitor between the second voltage node and the ground may be provided.

Abstract: The present invention relates to an autonomous driving cart. More particularly, the present invention relates to an autonomous driving cart that stores information on a leading subject, detects the leading subject from sensed information, and follows the detected leading subject.

Abstract: Provided herein may be a display device and a transistor. The display device may comprise a semiconductor pattern on a substrate and defining a hole, an insulating layer on the semiconductor pattern, and defining an opening area overlapping the hole, a gate electrode, a source electrode contacting a conductive area of the semiconductor pattern through the opening area, and a drain electrode on the insulating layer, electrodes respectively on the gate electrode, the source electrode, and the drain electrode, and spaced apart from each other, and light emitting elements between the electrodes, respectively.

Abstract: A package for a silicon photonics device and an implementation method thereof are disclosed. The package for a silicon photonics device according to one embodiment includes a step difference control part having an upper surface, where a silicon photonics device platform having a silicon photonics device mounted thereon is mounted, and configured to control a step difference generated between the silicon photonics device platform and one or more functional electronic devices mounted on an upper surface of a board and a body part configured to transfer heat transferred through the step difference control part and heat transferred through a lower surface of the board to the outside by mounting the step difference control part on at least a partial region of an upper surface thereof and bringing the lower surface of the board into close contact with at least a part of the remaining region except for the partial region.

Abstract: An integrated switching device in which a contactor unit which is capable of controlling a continuity state of an electric circuit, a blocking unit which is capable of cutting a contactor and blocking a current when abnormality is generated in the contactor or a current having a size exceeding a permitted current range of the contactor is generated, and a current measuring unit which is capable of measuring a current by using shunt resistor are integrated into one device, thereby performing various functions only with one device.

Abstract: An image sensor includes: a pixel of a first tab; a pixel of a second tab; an operation amplifier suitable for comparing, in a comparison operation, a pixel signal of the first tab and a pixel signal of the second tab with each other to produce a comparison result, receiving, in an auto-zeroing operation, a ramp voltage and a selected pixel signal which is selected based on the comparison result between the pixel signal of the first tab and the pixel signal of the second tab, and receiving, in an analog-to-digital conversion operation, the ramp voltage and an unselected pixel signal which is not selected from the pixel signal of the first tab and the second pixel signal of the second tab; and a counter circuit suitable for generating a digital code based on an output of the operation amplifier.

Abstract: A camera module including a housing, a lens barrel disposed in the housing and configured to accommodate at least one lens, a first substrate including an image sensor configured to receive light passing through the lens, and a second substrate including a through-portion configured to pass the lens barrel.

Abstract: A display device includes a display panel; a first digitizer layer disposed on the display panel; a second digitizer layer disposed on the display panel and separated from the first digitizer layer; a first plate member disposed on the first digitizer layer; and a second plate member disposed on the second digitizer layer, wherein each of the first plate member and the second plate member includes a plurality of plate portions and one or more hinge portions configured to rotatably connect the plurality of plate portions to each other.

Abstract: A display device includes a substrate including a display area and a pad area; a first conductive layer including a first pad electrode in the pad area; and a second conductive layer the second conductive layer includes a second pad electrode on the first pad electrode in the pad area; the first pad electrode and the second pad electrode overlap in a first direction that is a thickness direction, and do not overlap in a second direction perpendicular to the first direction.

Abstract: Provided are an iodine-containing metal compound, a composition for depositing a metal-containing thin film including the same, and a method of manufacturing a metal-containing thin film using the same. Since the composition for depositing a thin film according to one embodiment is present in a liquid state at room temperature, it has excellent storage and handling properties, and since the composition has high reactivity, a metal thin film may be efficiently formed using the composition.

Abstract: The display device includes: a substrate; a first electrode and a second electrode that are disposed on the substrate and spaced apart from each other; a first insulating layer disposed between the first electrode and the second electrode and covering the first electrode and the second electrode; and a light emitting element disposed on the first insulating layer and extending in a first direction. The light emitting element includes: a first side extending in the first direction; a second side opposite to the first side; a first lateral side connecting first end portions of the first and second sides; and a second lateral side connecting second end portions of the first and second sides. Each of a first interior angle and a second interior angle, which are formed by the first side and the first and second lateral sides, is an acute angle.

Abstract: A method for fabricating a photomask layout is provided. The method includes: receiving a first layout including a main pattern; generating a second layout by generating an assist feature in consideration of optical properties of the main pattern in the first layout; generating a third layout by performing optical proximity correction (OPC) on a second layout; and outputting the third layout to a corrected layout when the assist feature is not generated on an ACI image of a semiconductor film etched by using a photomask generated using the third layout, as an etching mask.

Abstract: Provided is a catalyst structure for electrochemical CO2 reduction. The catalyst structure includes carbon nanofibers doped with nitrogen (N), and copper (Cu) particles dispersed on the carbon nanofibers. At least portions of the carbon nanofibers at interfaces with the Cu particles may have a pyridinic-N structure.

Abstract: Disclosed are a positive electrode binder for a lithium secondary battery capable of improving battery performance, by being constituted by a cationic monomer, and thus capturing lithium polysulfide that occurs during charging and discharging of the battery, and a positive electrode for a lithium secondary battery and a lithium secondary battery comprising the same. The positive electrode binder for the lithium secondary battery comprises a cationic (meth)acrylate-based monomer containing one or more cations, or a derivative thereof.

Abstract: A method of testing a display panel including a pixel coupled to first, second, and third power lines, a data line, scan lines, an emission control line, and a test line, the method includes: applying a first power supply voltage to the first power line; applying a test voltage having a turn-on voltage level to the second power line; applying a scan signal having a turn-on voltage level sequentially to the scan lines and an emission control signal having a turn-on voltage level to the emission control line; applying a gate signal to the test line to turn on a test transistor coupled between two electrode of a light emitting element included in the pixel; measuring a sensing voltage output through the data line; and determining whether the pixel is defective, based on a voltage level of the measured sensing voltage.